Search Results1-20 of  66

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  • Lee Hi-Deok ID: 9000025038518

    Articles in CiNii:1

    • Combined effects of an epitaxial Ge channel and Si substrate on Ge-on-Si metal-oxide-semiconductor capacitors and field effect transistors (Special issue: Solid state devices and materials) (2008)
  • LEE Hi Deok ID: 9000017504499

    Dept. of Electronic Engineering, Chungnam National University (2011 from CiNii)

    Articles in CiNii:4

    • SONOS-Type Flash Memory with HfO_2 Thinner than 4nm as Trapping Layer Using Atomic Layer Deposition (2010)
    • Dual-Gate ZnO Thin-Film Transistors with SiNx as Dielectric Layer (2011)
    • Dual-gate ZnO thin-film transistors with SiNx as Dielectric Layer (2010)
  • LEE Hi Deok ID: 9000107388992

    Dept. of Electronics Engineering, Chungnam National University (2004 from CiNii)

    Articles in CiNii:1

    • Gate Engineering to Prevent NMOS Dopant Channeling for Nanoscale CMOSFET Technology (2004)
  • LEE Hi-Deok ID: 9000002171200

    Dept. of Electronics Engineering, Chungnam National University (2005 from CiNii)

    Articles in CiNii:1

    • Theoretical Investigation of Neutral Point Defects in CoSi_2 (2005)
  • LEE Hi-Deok ID: 9000002176694

    Dept. of Electronics Engineering, Chungnam National University (2007 from CiNii)

    Articles in CiNii:1

    • Dopant Dependency of Nickel Silicide and Its Improvement Utilizing Ni-Pd (5%) on SOI Substrate for Nano-scale CMOSFET (2007)
  • LEE Hi-Deok ID: 9000002176937

    Dept. of Electronics Engineering, Chungnam National Univ. (2007 from CiNii)

    Articles in CiNii:1

    • Effects of O_2 Plasma Treatment on the Reliabilities of Metal Gate/High-k Dielectric MOSFETs (2007)
  • LEE Hi-Deok ID: 9000004747028

    Dept. of Electronics Engineering, Chungnam National University (2010 from CiNii)

    Articles in CiNii:29

    • Thermally Robust Nickel Silicide Process Technology for Nano-Scale CMOS Technology (2004)
    • Abnormal Oxidation of Nickel Silicide on N-Type Substrate and Effect of Preamorphization Implantation (2004)
    • Characterization of the Co-Silicide Penetration Depth into the Junction Area (2001)
  • LEE Hi-Deok ID: 9000021643692

    Department of Electronics Engineering, Chungnam National University (2012 from CiNii)

    Articles in CiNii:1

    • Comparative Analysis of Bandgap-Engineered Pillar Type Flash Memory with HfO<sub>2</sub> and S<sub>3</sub>N<sub>4</sub> as Trapping Layer (2012)
  • LEE Hi-Deok ID: 9000107343638

    Department of Electronics Engineering, Chungnam National University (2005 from CiNii)

    Articles in CiNii:1

    • Novel Nitrogen Doped Ni Self-Alingned Silicide Process for Nanoscale Complementary Metal Oxide Semiconductor Technology (2005)
  • LEE Hi-Deok ID: 9000107344390

    Dept. of Electronics Engineering, Chungnam National University (2005 from CiNii)

    Articles in CiNii:1

    • Dependence of Analog and Digital Performances on Mechanical Film Stress of ILD Layers in Nanoscale CMOSFETs (2005)
  • LEE Hi-Deok ID: 9000107352462

    Department of Electronics Engineering, Chungnam National University (2004 from CiNii)

    Articles in CiNii:1

    • Characterization of Nickel-Silicide Dependence on the Substrate Dopants for Nanoscale Complementary Metal Oxide Semiconductor Technology (2004)
  • LEE Hi-Deok ID: 9000107375232

    Articles in CiNii:1

    • Analysis of Transfer Gate in CMOS Image Sensor (2010)
  • LEE Hi-Deok ID: 9000263066192

    the Department of Electronics Engineering, Chungnam National University (2013 from CiNii)

    Articles in CiNii:1

    • Novel PNP BJT S tructure to Improve Matching Characteristics for Analog and Mixed Signal Integrated Circuit Applications (2013)
  • LEE Hi-Deok ID: 9000263066230

    the Dept. of Electronics Engineering, Chungnam National Univ. (2013 from CiNii)

    Articles in CiNii:1

    • Effects of Fluorine Implantation on 1/f Noise, Hot Carrier and NBTI Reliability of MOSFETs (2013)
  • Lee Hi Deok ID: 9000402025692

    Articles in CiNii:1

    • Improvement in n-ZnO/p-Si diode properties using ZnO/AZO homogeneous metal contact (2014)
  • Lee Hi-Deok ID: 9000047184721

    Articles in CiNii:1

    • Novel Back End-of-Line Process Scheme for Improvement of Negative Bias Temperature Instability Lifetime (2006)
  • Lee Hi-Deok ID: 9000052272623

    Articles in CiNii:1

    • Study of Nickel Silicide Thermal Stability Using Silicon-on-Insulator Substrate for Nanoscale Complementary Metal Oxide Semiconductor Field-Effect Transisor Device (2008)
  • Lee Hi-Deok ID: 9000052292380

    Articles in CiNii:1

    • Effects of Strained Silicon Layer on Nickel (Germano)silicide for Nanoscale Complementary Metal Oxide Semiconductor Field-Effect Transistor Device (2008)
  • Lee Hi-Deok ID: 9000076644765

    Articles in CiNii:1

    • Influence of Incorporating Rare Earth Metals on the Schottky Barrier Height of Ni Silicide (2010)
  • Lee Hi-Deok ID: 9000258161357

    Departmet of Electronics Engineering, Chungnam National University, Yusong-Gu, Daejeon, 305-764, Korea (2002 from CiNii)

    Articles in CiNii:1

    • Characterization of the Co-Silicide Penetration Depth into the Junction Area for 0.15 and Sub-0.15 Micron CMOS Technology. (2002)
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