Search Results1-20 of  72

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  • Liu Yongxun ID: 9000018976339

    Articles in CiNii:1

    • Experimental Study of Floating-Gate-Type Metal–Oxide–Semiconductor Capacitors with Nanosize Triangular Cross-Sectional Tunnel Areas for Low Operating Voltage Flash Memory Application (Special Issue : Microprocesses and Nanotechnology) (2012)
  • Liu Yongxun ID: 9000024980012

    Articles in CiNii:1

    • Experimental study of physical-vapor-deposited titanium nitride gate with An n[+]-polycrystalline silicon capping layer and its application to 20nm fin-type double-gate metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials) (2011)
  • Liu Yongxun ID: 9000025017268

    Articles in CiNii:1

    • Investigation of low-energy tilted ion implantation for fin-type double-gate metal-oxide-semiconductor field-effect transistor extension doping (Special issue: Solid state devices and materials) (2010)
  • Liu Yongxun ID: 9000025017399

    Articles in CiNii:1

    • Investigation of thermal stability of TiN film formed by atomic layer deposition using tetrakis(dimethylamino)titanium precursor for metal-gate metal-oxide-semiconductor field-effect transistor (Special issue: Solid state devices and materials) (2010)
  • Liu Yongxun ID: 9000025063562

    Articles in CiNii:1

    • A comparative study of nitrogen gas flow ratio dependence on the electrical characteristics of sputtered titanium nitride gate bulk planar metal-oxide-semiconductor field-effect transistors and fin-type metal-oxide-semiconductor field-effect transistors (Special issue: Dielectric thin films for future ULSI devices: science and technology) (2009)
  • Liu Yongxun ID: 9000025063858

    Articles in CiNii:1

    • Fabrication and Characterization of NOR-Type Tri-Gate Flash Memory with Improved Inter-Poly Dielectric Layer by Rapid Thermal Oxidation (Special Issue : Microprocesses and Nanotechnology) (2012)
  • Liu Yongxun ID: 9000025078380

    Articles in CiNii:1

    • Experimental Comparisons between Tetrakis(dimethylamino)titanium Precursor-Based Atomic-Layer-Deposited and Physical-Vapor-Deposited Titanium-Nitride Gate for High-Performance Fin-Type Metal-Oxide-Semiconductor Field-Effect Transistors (Special Issue : Solid State Devices and Materials (2)) (2012)
  • Liu Yongxun ID: 9000025078874

    Articles in CiNii:1

    • Fabrication of Floating-Gate-Type Fin-Channel Double- and Tri-Gate Flash Memories and Comparative Study of Their Electrical Characteristics (Special Issue : Solid State Devices and Materials (2)) (2012)
  • Liu Yongxun ID: 9000025083642

    Articles in CiNii:1

    • Nanoscale wet etching of physical-vapor-deposited titanium nitride and its application to sub-30-nm-gate-length fin-type double-gate metal-oxide-semiconductor field-effect transistor fabrication (Special issue: Microprocesses and nanotechnology) (2010)
  • Liu Yongxun ID: 9000025095978

    Articles in CiNii:1

    • Experimental Study of Effective Carrier Mobility of Multi-Fin-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors with (111) Channel Surface Fabricated by Orientation-Dependent Wet Etching (Special Issue: Solid State Devices & Materials) (2006)
  • Liu Yongxun ID: 9000025096471

    Articles in CiNii:1

    • Demonstration and Analysis of Accumulation-Mode Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor (Special Issue: Solid State Devices & Materials) (2006)
  • Liu Yongxun ID: 9000025096474

    Articles in CiNii:1

    • Investigation of N-Channel Triple-Gate Metal-Oxide-Semiconductor Field-Effect Transistors on (100) Silicon on Insulator Substrate (Special Issue: Solid State Devices & Materials) (2006)
  • Liu Yongxun ID: 9000241566246

    Articles in CiNii:1

    • Gate Structure Dependence of Variability in Polycrystalline Silicon Fin-Channel Flash Memories (Special Issue : Microprocesses and Nanotechnology) (2013)
  • LIU Yongxun ID: 9000001814471

    Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) (2012 from CiNii)

    Articles in CiNii:7

    • Fabrication of a Vertical-Channel Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor Using a Neutral Beam Etching (2006)
    • Investigation of N-Channel Triple-Gate MOSFETs on (100) SOI Substrate (2005)
    • Enhancing Noise Margins of Fin-Type Field Effect Transistor Static Random Access Memory Cell by Using Threshold Voltage-Controllable Flexible-Pass-Gates (2009)
  • LIU Yongxun ID: 9000004746888

    Articles in CiNii:33

    • Vertical Double-Gate MOSFET Device Technology (2006)
    • Static Noise Margin Enhancement by Flex-Pass-Gate SRAM (2008)
    • Metal-Gate FinFET Technology (2009)
  • LIU Yongxun ID: 9000021671419

    Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) (2012 from CiNii)

    Articles in CiNii:1

    • A 0.7-V Opamp in Scaled Low-Standby-Power FinFET Technology (2012)
  • LIU Yongxun ID: 9000021671462

    AIST (2012 from CiNii)

    Articles in CiNii:1

    • High-Frequency Precise Characterization of Intrinsic FinFET Channel (2012)
  • LIU Yongxun ID: 9000107306337

    Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (2003 from CiNii)

    Articles in CiNii:1

    • Fabrication of ultrathin Si Channel Wall For Vertical Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor (DG MOSFET) by Using Ion-Bombardment-Retarded Etching (IBRE) (2003)
  • LIU Yongxun ID: 9000107343907

    Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) (2005 from CiNii)

    Articles in CiNii:1

    • Device Design Consideration for V_<th>-Controllable Four-Terminal Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor (2005)
  • LIU Yongxun ID: 9000107377717

    National Institute of Advanced Industrial Science and Technology (AIST) (2003 from CiNii)

    Articles in CiNii:1

    • Fin-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Orientation-Dependent Etching and Electron Beam Lithography (2003)
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