Search Results1-20 of  22

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  • LIU Zhengxin ID: 9000004962996

    Department of Electrical and Electronic Engineering, Toyohashi University of Technology (1999 from CiNii)

    Articles in CiNii:5

    • レーザーアブレーションによるa-Si膜の作製とレーザー結晶化 (1996)
    • Recent Progress in Laser Ablation-Deposition of Iron and Iron Silicide (1999)
    • Formation of β-FeSi_2 films by laser ablation (1998)
  • LIU Zhengxin ID: 9000107332803

    System Engineers' Co., Ltd. (2004 from CiNii)

    Articles in CiNii:1

    • Formation of β-FeSi_2 Microstructures by Reactive Ion Etching Using SF_6 Gas (2004)
  • LIU Zhengxin ID: 9000107383503

    Technology Development Department, System Engineers' Co., Ltd. (2005 from CiNii)

    Articles in CiNii:1

    • Arsenic Doping of n-Type β-FeSi_2 Films by Sputtering Method (2005)
  • LIU Zhengxin ID: 9000253698346

    Toyohashi Univ of Tech (1999 from CiNii)

    Articles in CiNii:1

    • Repairing of Cr-photo-mask by ultrafast- pulse laser (1999)
  • Liu Zhengxin ID: 9000025086830

    Articles in CiNii:1

    • Improvement of the production yield of spherical Si by optimization of the seeding technique in the dropping method (2007)
  • Liu Zhengxin ID: 9000256659583

    Department of Electrical and Electronic Engineering, Toyohashi University of Technology (1999 from CiNii)

    Articles in CiNii:1

    • Recent Progress in Laser Ablation-Deposition of Iron and Iron Silicide.:Deposition of Iron and Iron Silicide (1999)
  • Liu Zhengxin ID: 9000258171917

    System Engineers’ Co., Ltd. (2004 from CiNii)

    Articles in CiNii:1

    • Boron Doping for p-Type .BETA.-FeSi2 Films by Sputtering Method (2004)
  • Liu Zhengxin ID: 9000258175777

    System Engineers’ Co., Ltd. (2004 from CiNii)

    Articles in CiNii:1

    • Formation of .BETA.-FeSi2 Microstructures by Reactive Ion Etching Using SF6 Gas (2004)
  • Liu Zhengxin ID: 9000258184462

    Technology Development Department, System Engineers’ Co., Ltd., AIST Tsukuba West (2005 from CiNii)

    Articles in CiNii:1

    • Arsenic Doping of n-Type .BETA.-FeSi2 Films by Sputtering Method (2005)
  • Liu Zhengxin ID: 9000401565316

    Articles in CiNii:1

    • Doping of β-FeSi2Thin Film with Aluminum Prepared by Molecular Beam Epitaxy (2008)
  • Liu Zhengxin ID: 9000401728469

    Articles in CiNii:1

    • Formation of β-FeSi2Microstructures by Reactive Ion Etching Using SF6Gas (2004)
  • Liu Zhengxin ID: 9000401733489

    Articles in CiNii:1

    • Boron Doping forp-Type β-FeSi2Films by Sputtering Method (2004)
  • Liu Zhengxin ID: 9000401744026

    Articles in CiNii:1

    • Arsenic Doping ofn-Type β-FeSi2Films by Sputtering Method (2005)
  • Liu Zhengxin ID: 9000401988519

    Articles in CiNii:1

    • Improved passivation effect at the amorphous/crystalline silicon interface due to ultrathin SiOx layers pre-formed in chemical solutions (2014)
  • Liu Zhengxin ID: 9000402028135

    Articles in CiNii:1

    • Defining a parameter of plasma-enhanced CVD to characterize the effect of silicon-surface passivation in heterojunction solar cells (2015)
  • Liu Zhengxin ID: 9000402033015

    Articles in CiNii:1

    • Effects of the CuS phase on the growth and properties of CuInS2thin films (2015)
  • Liu Zhengxin ID: 9000402039585

    Articles in CiNii:1

    • Morphology, structure, and properties of Cu-poor and Cu-rich Cu(In,Ga)Se2films partially selenized using H2Se gas (2016)
  • Liu Zhengxin ID: 9000402040139

    Articles in CiNii:1

    • 2016-12-14 (2016)
  • Liu Zhengxin ID: 9000402041932

    Articles in CiNii:1

    • Characterization of transparent conductive oxide films and their effect on amorphous/crystalline silicon heterojunction solar cells (2017)
  • Liu Zhengxin ID: 9000402042669

    Articles in CiNii:1

    • Achieving composition-controlled Cu2ZnSnS4 films by sulfur-free annealing process (2017)
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