Search Results1-20 of  50

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  • Lai Chao-Sung ID: 9000025016470

    Articles in CiNii:1

    • Light addressable potentiometric sensor with fluorine-terminated hafnium oxide layer for sodium detection (Special issue: Solid state devices and materials) (2010)
  • Lai Chao-Sung ID: 9000025017026

    Articles in CiNii:1

    • Differential light addressable potentiometric sensor with poly(vinyl chloride) and HfO2 membranes for pH sensors (Special issue: Solid state devices and materials) (2010)
  • Lai Chao-Sung ID: 9000025017557

    Articles in CiNii:1

    • Threshold voltage tunability of p-channel metal oxide semiconductor field-effect transistor with ternary HfxMo[y]Nz metal gate and Gd2O3 high-k gate dielectric (Special issue: Solid state devices and materials) (2010)
  • Lai Chao-Sung ID: 9000025031167

    Articles in CiNii:1

    • Negative bias temperature instability of p-channel metal oxide semiconductor field effect transistor with novel Hf[x]MO[y]Nz metal gate electrodes (Special issue: Solid state devices and materials) (2009)
  • Lai Chao Sung ID: 9000025037718

    Articles in CiNii:1

    • Characterizations of Hf[x]Mo[y]Nz alloys as gate electrodes for n- and p-channel metal oxide semiconductor field effect transistors (Special issue: Solid state devices and materials) (2008)
  • Lai Chao-Sung ID: 9000025063113

    Articles in CiNii:1

    • High-k Hf[x]Gd[y]Oz charge trapping layer in silicon-oxide-nitride-silicon type nonvolatile memory by in situ radio frequency dual-sputtering method (Special issue: Dielectric thin films for future ULSI devices: science and technology) (2009)
  • Lai Chao Sung ID: 9000025077314

    Articles in CiNii:1

    • Improvement of Uniformity of Resistive Switching Parameters by Selecting the Electroformation Polarity in IrOx/TaOx/WOx/W Structure (Special Issue : Solid State Devices and Materials (2)) (2012)
  • Lai Chao Sung ID: 9000025085721

    Articles in CiNii:1

    • Reoxidation after NH3 Plasma Nitridation for Multiple-Thickness Oxynitrides (2005)
  • LAI Chao Sung ID: 9000001717155

    National Nano Device Laboratory (1997 from CiNii)

    Articles in CiNii:1

    • Improvement of Reliability of MOSFET's with N_2O Nitrided Gate Oxide and N_2O Polysilicon Gate Reoxidation (1997)
  • LAI Chao Sung ID: 9000005592654

    Department of Electronic Engineering, Chang Gung University (2007 from CiNii)

    Articles in CiNii:6

    • Hysteresis Phenomenon Improvements of HfO_2 by CF_4 Plasma Treatment (2004)
    • Thermal Stability Improvements for HfO_2 by Fluorine Implantation (2005)
    • Characterization of Novel HfTiO Gate Dielectrics Post-treated by NH_3 Plasma and Ultra-violet Rays (2005)
  • LAI Chao Sung ID: 9000107343763

    Department of Electronic Engineering, Chang Gung University (2005 from CiNii)

    Articles in CiNii:1

    • Effects of Post CF_4 Plasma Treatment on the HfO_2 Thin Film (2005)
  • LAI Chao Sung ID: 9000258739791

    Department of Electronic Engineering, Chang Gung University (2013 from CiNii)

    Articles in CiNii:1

    • GaN Thin Film Based Light Addressable Potentiometric Sensor for pH Sensing Application (2013)
  • LAI Chao-Sung ID: 9000002168935

    Department of Electronic Engineering, Chang Gung University (2007 from CiNii)

    Articles in CiNii:4

    • Thickness Effects on pH Response of HfO_2 Sensing Dielectric Improved by Rapid Thermal Annealing (2005)
    • Full Range Work Function Modulation by Nitrogen Incorporation in Hf-Mo Binary Alloys Gate Electrode (2007)
    • Novel inorganic pH-insensitive membrane prepared by post N_2O plasma treatment on conventional Si_3N_4/SiO_2 stack layer for REFET application (2007)
  • LAI Chao-Sung ID: 9000002170115

    Department of Electronic Engineering, Chang Gung University (2006 from CiNii)

    Articles in CiNii:2

    • Work Function Adjustment by Nitrogen Incorporation in HfN Gate Electrode (2005)
    • Nitrogen Induced Extrinsic States (NIES) in Effective Work Function Instability of TiN_x/SiO_2 and TiN_x/HfO_2 Gate Stacks (2006)
  • LAI Chao-Sung ID: 9000002170984

    Department of Electronic Engineering, Chang Gung University (2005 from CiNii)

    Articles in CiNii:1

    • Ion Polarity Dependent Voltage Shifts of SiGe Membrane for pH Sensor (2005)
  • LAI Chao-Sung ID: 9000002173851

    Department of Electronic Engineering, Chang Gung University (2006 from CiNii)

    Articles in CiNii:1

    • Modifications on pH sensitivity of Si_3N_4 membrane by CF_4 plasma and rapid thermal annealing for ISFET/REFET applications (2006)
  • LAI Chao-Sung ID: 9000002175905

    Department of Electronic Engineering, Chang Gung University (2007 from CiNii)

    Articles in CiNii:1

    • In-Situ Fluorinated Low-Temperature Polycrystalline Silicon (LTPS) Thin-Film Transistors (TFT) with Low Trapping and Off Current by CF_4 Plasma (2007)
  • LAI Chao-Sung ID: 9000019140774

    Department of Electronic Engineering, Chang Gung University (2012 from CiNii)

    Articles in CiNii:1

    • Dynamic Charge Centroid on Data Retention of Double-Nanostructure Nonvolatile Memory (2012)
  • LAI Chao. Sung ID: 9000001719289

    Department of Electronic Engineering, Chang Gung University (2000 from CiNii)

    Articles in CiNii:1

    • The Polarity Dependence of Soft-Breakdown Characterization for Ultra-Thin Gate Oxides Affected by Nitrogen and Fluorine (2000)
  • Lai Chao Sung ID: 9000025096816

    Articles in CiNii:1

    • Characteristics of Fluorine Implantation for HfO2 Gate Dielectrics with High-Temperature Postdeposition Annealing (Special Issue: Solid State Devices & Materials) (2006)
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