Search Results1-20 of  30

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  • Lee Byoung Hun ID: 9000025035357

    Articles in CiNii:1

    • Improved hot carrier reliability characteristics of metal oxide semiconductor field effect transistors with high-k gate dielectric by using high pressure deuterium post metallization annealing (2007)
  • LEE Byoung Hun ID: 9000001496863

    IBM (2005 from CiNii)

    Articles in CiNii:8

    • Trapping/De-Trapping Gate Bias Dependence of Hf-Silicate Dielectrics with Poly and TiN Gate Electrode (2005)
    • Ultra-Short Pulse Current-Voltage Characterization of the Intrinsic Characteristics of High-κ Devices (2005)
    • Temperature effects of constant bias stress on NFETs with Hf-based gate dielectric (2004)
  • LEE Byoung Hun ID: 9000002174808

    SEMATECH (2007 from CiNii)

    Articles in CiNii:2

    • Compatibility of ALD Hafnium Silicate with Dual Metal Gate CMOS Integration (2006)
    • Effects of O_2 Plasma Treatment on the Reliabilities of Metal Gate/High-k Dielectric MOSFETs (2007)
  • LEE Byoung Hun ID: 9000107343460

    SEMATECH (2005 from CiNii)

    Articles in CiNii:1

    • Temperature Effects of Constant Bias Stress on n-Channel FETs with Hf-based Gate Dielectric (2005)
  • LEE Byoung Hun ID: 9000107344124

    International SEMATECH (2005 from CiNii)

    Articles in CiNii:1

    • Transient Charging and Relaxation in High-k Gate Dielectrics and Their Implications (2005)
  • Lee Byoung Hun ID: 9000025088605

    Articles in CiNii:1

    • Stress-polarity-independent negative threshold voltage shift in HfO2/TiN p-channel metal oxide semiconductor field-effect transistor (2008)
  • Lee Byoung Hun ID: 9000058487572

    Articles in CiNii:1

    • Negative Bias Temperature Instability Dependence on Dielectric Thickness and Nitrogen Concentration in Ultra-scaled HfSiON Dielectric/TiN Gate Stacks (2006)
  • Lee Byoung Hun ID: 9000258180494

    SEMATECH (2005 from CiNii)

    Articles in CiNii:1

    • Temperature Effects of Constant Bias Stress on n-Channel FETs with Hf-based Gate Dielectric (2005)
  • Lee Byoung Hun ID: 9000258180716

    IBM assignee 2706 Montopolis Drive (2005 from CiNii)

    Articles in CiNii:1

    • Trapping/De-Trapping Gate Bias Dependence of Hf-Silicate Dielectrics with Poly and TiN Gate Electrode (2005)
  • Lee Byoung Hun ID: 9000258181181

    International SEMATECH|IBM assignee (2005 from CiNii)

    Articles in CiNii:1

    • Transient Charging and Relaxation in High-k Gate Dielectrics and Their Implications (2005)
  • Lee Byoung Hun ID: 9000258181404

    SEMATECH|IBM Assignee at SEMATECH (2005 from CiNii)

    Articles in CiNii:1

    • Ultra-Short Pulse Current-Voltage Characterization of the Intrinsic Characteristics of High-.KAPPA. Devices (2005)
  • Lee Byoung Hun ID: 9000401735578

    Articles in CiNii:1

    • Temperature Effects of Constant Bias Stress on n-Channel FETs with Hf-based Gate Dielectric (2005)
  • Lee Byoung Hun ID: 9000401735860

    Articles in CiNii:1

    • Transient Charging and Relaxation in High-k Gate Dielectrics and Their Implications (2005)
  • Lee Byoung Hun ID: 9000401735867

    Articles in CiNii:1

    • Trapping/De-Trapping Gate Bias Dependence of Hf-Silicate Dielectrics with Poly and TiN Gate Electrode (2005)
  • Lee Byoung Hun ID: 9000401735894

    Articles in CiNii:1

    • 2005-04-21 (2005)
  • Lee Byoung Hun ID: 9000401766332

    Articles in CiNii:1

    • Improved Hot Carrier Reliability Characteristics of Metal Oxide Semiconductor Field Effect Transistors with High-kGate Dielectric by Using High Pressure Deuterium Post Metallization Annealing (2007)
  • Lee Byoung Hun ID: 9000401782313

    Articles in CiNii:1

    • 2009-09-24 (2009)
  • Lee Byoung Hun ID: 9000401783756

    Articles in CiNii:1

    • 2009-11-20 (2009)
  • Lee Byoung Hun ID: 9000401804030

    Articles in CiNii:1

    • Characterization on Improved Effective Mobility of Pentacene Organic Field-Effect Transistors Using Graphene Electrodes (2012)
  • Lee Byoung Hun ID: 9000401977849

    Articles in CiNii:1

    • Piezoelectrically modulated touch pressure sensor using a graphene barristor (2019)
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