Search Results1-20 of  22

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  • Cheul-Ro LEE ID: 9000000076442

    Korea Research Institute of Standards and Science (1998 from CiNii)

    Articles in CiNii:1

    • Raman Scattering Measurements in Si-Doped GaN (1998)
  • LEE Cheul-Ro ID: 9000002167589

    School of Advanced Materials Engineering and Research Institute of Advanced Materials Development, Chonbuk National University (2004 from CiNii)

    Articles in CiNii:2

    • Characteristics of p-type InGaN grown by metalorganic chemical vapor depostion (2004)
    • High brightness InGaN/GaN blue LED realized by a 2''×6 MOCVD system (2004)
  • LEE Cheul-Ro ID: 9000002167643

    School of Advanced Materials Engineering, Engineering College, Chonbuk National University (2007 from CiNii)

    Articles in CiNii:9

    • Characteristics of back illumination type UV photodetector fabricated by Al_xGa_<1-x>N heterostructure (2004)
    • Growth of Perfect Crack-Free GaN/Si(111) Epitaxy Using CBL and Superlattice (2004)
    • Characteristic comparison of GaN grown on patterned sapphire substrates following growth time (2006)
  • LEE Cheul-Ro ID: 9000002168313

    RCAMD, Research Center of Advanced Materials Department, School of Advanced Materials Engineering, Engineering College, Chonbuk National University (2004 from CiNii)

    Articles in CiNii:1

    • Characteristic comparision of GaN epitaxy grown on patterned and unpatterned Si(111) (2004)
  • LEE Cheul-Ro ID: 9000018697170

    School of Advanced Materials Engineering and Research Center of Advanced Materials Development, Chonbuk National University (2011 from CiNii)

    Articles in CiNii:1

    • High-Brightness GaN-Based Light-Emitting Diodes on Si Using Wafer Bonding Technology (2011)
  • LEE Cheul-Ro ID: 9000107344159

    RCAMD, Research Center of Advanced Materials Development, School of Advanced Materials Engineering, Engineering College, Chonbuk National University (2005 from CiNii)

    Articles in CiNii:1

    • Characteristics of Back-illumination UV Photodetector Fabricated with Al_xGa_<1-x>N Heterostructure (2005)
  • LEE Cheul-Ro ID: 9000107344275

    School of Advanced Materials Engineering, Engineering College, Chonbuk National University (2005 from CiNii)

    Articles in CiNii:1

    • High Brightness InGaN/GaN Blue Light Emitting Diode Realized by a 6×2" MOCVD System (2005)
  • Lee Cheul-Ro ID: 9000047136571

    Articles in CiNii:1

    • Self-Assembled GaN Nano-Column Grown on Si(111) Substrate Using Au+Ga Alloy Seeding Method by Metalorganic Chemical Vapor Deposition (2007)
  • Lee Cheul-Ro ID: 9000047149067

    Articles in CiNii:1

    • Characteristic Comparison of GaN Grown on Patterned Sapphire Substrates Following Growth Time (2007)
  • Lee Cheul-Ro ID: 9000067889734

    Articles in CiNii:1

    • Highly Uniform Characteristics of GaN Nanorods Grown on Si(111) by Metalorganic Chemical Vapor Deposition (2010)
  • Lee Cheul-Ro ID: 9000069891809

    Articles in CiNii:1

    • Fabrication and Characterization of InxGa1-xN Quantum Dots Using Nitridation of Nano-alloyed Droplet Growth Technique (2008)
  • Lee Cheul-Ro ID: 9000070034013

    Articles in CiNii:1

    • Epitaxial Growth of Crack-Free GaN on Patterned Si(111) Substrate (2008)
  • Lee Cheul-Ro ID: 9000081098901

    Articles in CiNii:1

    • Effect of H2Carrier Gas on the Growth of GaN Nanowires on Si(111) Substrates by Metalorganic Chemical Vapor Deposition (2010)
  • Lee Cheul-Ro ID: 9000082284209

    Articles in CiNii:1

    • GaN Nanowires with Au+Ga Solid Solution Grown on an Si(111) Substrate by Metalorganic Chemical Vapor Deposition (2009)
  • Lee Cheul-Ro ID: 9000257847657

    Division of Advanced Materials Engineering and Research Center of Industrial Technology, Chonbuk National University (2007 from CiNii)

    Articles in CiNii:1

    • The Effect of Hydroxy Ethyl Cellulose (HEC) and Chloride Ions on the Surface Morphology and Mechanical Characteristics during Copper Electrodeposition (2007)
  • Lee Cheul-Ro ID: 9000258180843

    RCAMD, Research Center of Advanced Materials Development, School of Advanced Materials Engineering, Engineering College, Chonbuk National University (2005 from CiNii)

    Articles in CiNii:1

    • Characteristics of Back-illumination UV Photodetector Fabricated with AlxGa1-xN Heterostructure (2005)
  • Lee Cheul-Ro ID: 9000258181245

    School of Advanced Materials Engineering, Engineering College, Chonbuk National University (2005 from CiNii)

    Articles in CiNii:1

    • High Brightness InGaN/GaN Blue Light Emitting Diode Realized by a 6*2'' MOCVD System (2005)
  • Lee Cheul-Ro ID: 9000401570818

    Articles in CiNii:1

    • High-Brightness GaN-Based Light-Emitting Diodes on Si Using Wafer Bonding Technology (2011)
  • Lee Cheul-Ro ID: 9000401735983

    Articles in CiNii:1

    • High Brightness InGaN/GaN Blue Light Emitting Diode Realized by a 6×2'' MOCVD System (2005)
  • Lee Cheul-Ro ID: 9000401736072

    Articles in CiNii:1

    • Characteristics of Back-illumination UV Photodetector Fabricated with AlxGa1-xN Heterostructure (2005)
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