Search Results1-16 of  16

  • Lee Heng-Yuan ID: 9000025016607

    Articles in CiNii:1

    • Improved bipolar resistive switching of HfOx/TiN stack with a reactive metal layer and post metal annealing (Special issue: Solid state devices and materials) (2010)
  • LEE Heng-Yuan ID: 9000002172516

    Electronics and Optoelectronics Research Laboratory, Industrial Technology Research Institute (2006 from CiNii)

    Articles in CiNii:1

    • Low Power Operation of Non-volatile Hafnium Oxide Resistive Memory (2006)
  • LEE Heng-Yuan ID: 9000107313994

    Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute (2007 from CiNii)

    Articles in CiNii:1

    • HfO_2/HfAlO/HfO_2 Nanolaminate Charge Trapping Layers for High-Performance Nonvolatile Memory Device Applications (2007)
  • Lee Heng Yuan ID: 9000401805180

    Articles in CiNii:1

    • Improvement of Uniformity of Resistive Switching Parameters by Selecting the Electroformation Polarity in IrO$_{x}$/TaO$_{x}$/WO$_{x}$/W Structure (2012)
  • Lee Heng Yuan ID: 9000401805251

    Articles in CiNii:1

    • Formation-Polarity-Dependent Improved Resistive Switching Memory Performance Using IrO$_{x}$/GdO$_{x}$/WO$_{x}$/W Structure (2012)
  • Lee Heng Yuan ID: 9000402006048

    Articles in CiNii:1

    • Improvement of Uniformity of Resistive Switching Parameters by Selecting the Electroformation Polarity in IrOx/TaOx/WOx/W Structure (2012)
  • Lee Heng Yuan ID: 9000402006119

    Articles in CiNii:1

    • Formation-Polarity-Dependent Improved Resistive Switching Memory Performance Using IrOx/GdOx/WOx/W Structure (2012)
  • Lee Heng Yuan ID: 9000402025389

    Articles in CiNii:1

    • Impact of self-complementary resistance switch induced by over-reset energy on the memory reliability of hafnium oxide based resistive random access memory (2014)
  • Lee Heng-Yuan ID: 9000024933355

    Articles in CiNii:1

    • Low-power switching of nonvolatile resistive memory using hafnium oxide (Special issue: Solid state devices and materials) (2007)
  • Lee Heng-Yuan ID: 9000047132411

    Articles in CiNii:1

    • TiO2Nanocrystal Prepared by Atomic-Layer-Deposition System for Non-Volatile Memory Application (2007)
  • Lee Heng-Yuan ID: 9000401767627

    Articles in CiNii:1

    • Low Voltage Operation of High-κ HfO2/TiO2/Al2O3Single Quantum Well for Nanoscale Flash Memory Device Applications (2008)
  • Lee Heng-Yuan ID: 9000401786777

    Articles in CiNii:1

    • Improved Bipolar Resistive Switching of HfOx/TiN Stack with a Reactive Metal Layer and Post Metal Annealing (2010)
  • Lee Heng-Yuan ID: 9000401805215

    Articles in CiNii:1

    • Record Resistance Ratio and Bipolar/Unipolar Resistive Switching Characteristics of Memory Device Using Germanium Oxide Solid Electrolyte (2012)
  • Lee Heng-Yuan ID: 9000402006083

    Articles in CiNii:1

    • Record Resistance Ratio and Bipolar/Unipolar Resistive Switching Characteristics of Memory Device Using Germanium Oxide Solid Electrolyte (2012)
  • Lee Heng-Yuan ID: 9000402025420

    Articles in CiNii:1

    • Nonlinear bidirectional selector without rare materials for stackable cross-bar bipolar memory applications (2014)
  • Lee Heng-Yuan ID: 9000402034794

    Articles in CiNii:1

    • Simulation-based study of negative-capacitance double-gate tunnel field-effect transistor with ferroelectric gate stack (2016)
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