Search Results1-18 of  18

  • Lu Xiangmeng ID: 9000241433531

    Articles in CiNii:1

    • Size Distribution and Scaling Behavior of InAlAs/AlGaAs Quantum Dots Grown on GaAs by Molecular Beam Epitaxy (2013)
  • LU Xiangmeng ID: 9000345337021

    Graduate School of Science and Technology, Tokushima University (2017 from CiNii)

    Articles in CiNii:1

    • Surface Emitting Devices Based on a Semiconductor Coupled Multilayer Cavity for Novel Terahertz Light Sources (2017)
  • LU Xiangmeng ID: 9000404667989

    Graduate School of Technology, Industrial and Social Sciences, Tokushima University (2019 from CiNii)

    Articles in CiNii:1

    • Sublattice Reversal Epitaxy on High-Index Substrates for Novel Planar-Type Nonlinear Optical Devices (2019)
  • Lu Xiangmeng ID: 9000311486503

    Articles in CiNii:16

    • Tow-Color VCSELs Based on a Coupled Multilayer Cavity for Novel Terahertz Emission Devices (2016)
    • Invited Talk : Novel Terahertz Light Emitting Devices Based on a Semiconductor Coupled Multilayer Cavity (2017)
    • Current-Injection Two-Color Lasing at Room Temperature Using a GaAs/AlGaAs Coupled Multilayer Cavity Fabricated by Wafer Bonding (2018)
  • Lu Xiangmeng ID: 9000365044484

    Articles in CiNii:1

    • Surface Emitting Devices Based on a Semiconductor Coupled Multilayer Cavity for Novel Terahertz Light Sources (Special Section on Fabrication Technologies Supporting the Photonic/Nanostructure Devices) (2017)
  • Lu Xiangmeng ID: 9000382636108

    Articles in CiNii:1

    • Current-injection two-color lasing in a wafer-bonded coupled multilayer cavity with InGaAs multiple quantum wells (2017)
  • Lu Xiangmeng ID: 9000382636112

    Articles in CiNii:1

    • GaAs/AlAs triple-coupled cavity with InAs quantum dots for ultrafast wavelength conversion devices (2017)
  • Lu Xiangmeng ID: 9000402012613

    Articles in CiNii:1

    • Size Distribution and Scaling Behavior of InAlAs/AlGaAs Quantum Dots Grown on GaAs by Molecular Beam Epitaxy (2013)
  • Lu Xiangmeng ID: 9000402028794

    Articles in CiNii:1

    • Effect of cavity-layer thicknesses on two-color emission in coupled multilayer cavities with InAs quantum dots (2015)
  • Lu Xiangmeng ID: 9000402041489

    Articles in CiNii:1

    • Current-injection two-color lasing in a wafer-bonded coupled multilayer cavity with InGaAs multiple quantum wells (2017)
  • Lu Xiangmeng ID: 9000402041493

    Articles in CiNii:1

    • GaAs/AlAs triple-coupled cavity with InAs quantum dots for ultrafast wavelength conversion devices (2017)
  • Lu Xiangmeng ID: 9000402048069

    Articles in CiNii:1

    • Sublattice reversal in GaAs/Ge/GaAs (113)B heterostructures and its application to THz emitting devices based on a coupled multilayer cavity (2018)
  • Lu Xiangmeng ID: 9000403305116

    Articles in CiNii:1

    • Time-resolved measurements of two-color laser light emitted from GaAs/AlGaAs-coupled multilayer cavity (2019)
  • Lu Xiangmeng ID: 9000405632286

    Articles in CiNii:1

    • Fabrication of two-color surface emitting device of a coupled vertical cavity structure with InAs quantum dots formed by wafer bonding (2016)
  • Lu Xiangmeng ID: 9000405632297

    Articles in CiNii:1

    • Two-color surface-emitting lasers using a semiconductor coupled multilayer cavity (2016)
  • Lu Xiangmeng ID: 9000405632300

    Articles in CiNii:1

    • Two-color surface-emitting lasers by a GaAs-based coupled multilayer cavity structure for coherent terahertz light sources (2017)
  • Lu Xiangmeng ID: 9000405632306

    Articles in CiNii:1

    • Sublattice reversal in GaAs/Ge/GaAs heterostructures grown on (113)B GaAs substrates (2017)
  • Lu Xiangmeng ID: 9000405632311

    Articles in CiNii:1

    • Room-temperature two-color lasing by current injection into a GaAs/AlGaAs coupled multilayer cavity fabricated by wafer bonding (2018)
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