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  • MAEGAWA Yosuke ID: 9000107355377

    Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University (2011 from CiNii)

    Articles in CiNii:1

    • Influence of Source/Drain Parasitic Resistance on Device Performance of Ultrathin Body III-V Channel Metal-Oxide-Semiconductor Field-Effect Transistors (2011)
  • MAEGAWA Yosuke ID: 9000261681167

    Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University (2013 from CiNii)

    Articles in CiNii:1

    • Increased Subthreshold Current due to Source-Drain Direct Tunneling in Ultrashort-Channel III-V Metal-Oxide-Semiconductor Field-Effect Transistors (2013)
  • Maegawa Yosuke ID: 9000239607364

    Articles in CiNii:1

    • Influence of Source/Drain Parasitic Resistance on Device Performance of Ultrathin Body III-V Channel Metal-Oxide-Semiconductor Field-Effect Transistors (2011)
  • Maegawa Yosuke ID: 9000285078584

    Graduate School of Engineering, Kobe University (2013 from CiNii)

    Articles in CiNii:1

    • Quantum transport simulation of ultrasmall III-V MOSFETs using Wigner Monte Carlo approach (2013)
  • Yosuke MAEGAWA ID: 9000402223103

    Articles in CiNii:1

    • Otto Hoetzschs Erorterungen uber Locarno-Politik : "Vertragsidee von Locarno" als eine Logik fur "positive Mitarbeit" (2013)
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