Search Results1-20 of  173

  • Maezawa Koichi ID: 9000025031476

    Articles in CiNii:1

    • Improved bias stability of the resonant tunneling diode pair oscillators integrated on an AIN ceramic substrate (Special issue: Solid state devices and materials) （2009）
  • Maezawa Koichi ID: 9000025095999

    Articles in CiNii:1

    • Experimental Demonstration of Ideal Noise Shaping in Resonant Tunneling Delta-Sigma Modulator for High Resolution, Wide Band Analog-to-Digital Converters (Special Issue: Solid State Devices & Materials) （2006）
  • MAEZAWA Koichi ID: 9000392871573

    Articles in CiNii:1

    • Growth of high quality InSb channel layer with In[x]Ga[₁₋x]Sb heteroepitaxial films on Si(111) (シリコン材料・デバイス) （2018）
  • MAEZAWA Koichi ID: 9000392871863

    Articles in CiNii:1

    • Growth of high quality InSb channel layer with In[x]Ga[₁₋x]Sb heteroepitaxial films on Si(111) (電子部品・材料) （2018）
  • MAEZAWA Koichi ID: 9000392872072

    Articles in CiNii:1

    • Growth of high quality InSb channel layer with In[x]Ga[₁₋x]Sb heteroepitaxial films on Si(111) (電子デバイス) （2018）
  • MAEZAWA Koichi ID: 1000090301217

    Graduate School of Science and Engineering, University of Toyama （2013 from CiNii）

    Articles in CiNii:149

    • Applications of resonant tunneling devices to new architectures for computation. （1994）
    • Drain Current DLTS of AlGaN/GaN HEMTs （2003）
    • Δ* A/D Converters Employing Resonant Tunneling Logic Gate MOBILEs （2005）
  • MAEZAWA Koichi ID: 9000000226563

    NTT LSI Laboratories （1996 from CiNii）

    Articles in CiNii:2

    • InP-Based High-Performance Monostable-Bistable Transistion Logic Element (MOBILE):an Intelligent Logic Gate Featuring Weighted-Sum Threshold Operations （1996）
    • InP-Based High-Performance Monostable-Bistable Transition Logic elements (MOBILEs) Using Resonant-Tunneling Devices （1995）
  • MAEZAWA Koichi ID: 9000001717275

    NTT System Electronics Laboratories （1997 from CiNii）

    Articles in CiNii:1

    • Input Power Dependence of Large-Signal Microwave Characteristics of Resonant-Tunneling High Electron Mobility Transistors （1997）
  • MAEZAWA Koichi ID: 9000002165270

    School of Engineering, Nagoya University （1999 from CiNii）

    Articles in CiNii:1

    • Ultrahigh-speed and Low Power Integrated Circuits Employing Resonant Tunneling Diodes （1999）
  • MAEZAWA Koichi ID: 9000003307371

    Department of Physics,School of Science and Engineering,Waseda University:Atsugi Electrical Communication Laboratories,NTT （1985 from CiNii）

    Articles in CiNii:1

    • ESR Study of Low Temperature Phase Transitions in Se Doped LiKSO4 （1985）
  • MAEZAWA Koichi ID: 9000003685640

    Mechanical Engineering Research Laboratory, Hitachi Ltd. （1987 from CiNii）

    Articles in CiNii:1

    • Vibration and Noise of Power Transmission System Including Gears : 2nd Report, Dynamic Load of Helical Gears-A New Theory, and its Experimental Validation （1987）
  • MAEZAWA Koichi ID: 9000003731215

    (株)日立製作所機械研究所 （1986 from CiNii）

    Articles in CiNii:1

    • Vibration and Noise of Power Transmission System Including Gears : 2nd Report, Dynamic Load of Helical Gears-A New Theory, and its Experimental Validation （1986）
  • MAEZAWA Koichi ID: 9000004822658

    Graduate School of Science and Engineering, University of Toyama （2008 from CiNii）

    Articles in CiNii:23

    • Fabricated on a GaAs-based Semiconductor-on-Insulator Substrate Using a Spin-On Low-k Dielectric Film （2003）
    • Dual-Wavelength High-Power Laser Diodes Fabricated by Selective Fluidic Self-Assembly （2005）
    • Dual wavelength high power laser diodes fabricated by Selective Fluidic Self-Assembly technique （2004）
  • MAEZAWA Koichi ID: 9000004873457

    NTT System Electronics Laboratories （1996 from CiNii）

    Articles in CiNii:1

    • Effects of Simulated Annealing in the Resonant-Tunneling Resistive-Fuse Network for Early Vision （1996）
  • MAEZAWA Koichi ID: 9000004877038

    Graduate School of Engineering, Nagoya University （2002 from CiNii）

    Articles in CiNii:1

    • Effects of the HEMT Parameters on the Operation Frequency of Resonant Tunneling Logic Gate MOBILE （2002）
  • MAEZAWA Koichi ID: 9000005735430

    NTT LSI Laboratories （1995 from CiNii）

    Articles in CiNii:1

    • Monostable-Bistable Transition Logic Elements (MOBILEs) Based on Monolithic Integration of Resonant Tunneling Diodes and FETs （1995）
  • MAEZAWA Koichi ID: 9000005735449

    NTT LSI Laboratories （1995 from CiNii）

    Articles in CiNii:1

    • Analysis of Switching Time of Monostable-Bistable Transition Logic Elements Based on Simple Model Calculation （1995）
  • MAEZAWA Koichi ID: 9000018460402

    Graduate School of Science and Engineering, University of Toyama （2010 from CiNii）

    Articles in CiNii:1

    • A Third Order Harmonic Oscillator Based on Coupled Resonant Tunneling Diode Pair Oscillators （2010）
  • MAEZAWA Koichi ID: 9000107306211

    Department of Quantum Engineering, Nagoya University （2003 from CiNii）

    Articles in CiNii:1

    • Comparison of Electrical Characteristics of Metamorphic HEMTs with InP HEMTs and PHEMTs （2003）
  • MAEZAWA Koichi ID: 9000107306636

    Department of Quantum Engineering, Graduate School of Engineering, Nagoya University （2003 from CiNii）

    Articles in CiNii:1

    • Characterization of Electrical Properties of Micro-Schottky Contacts on Epitaxial Lateral Overgrowth GaN （2003）
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