Search Results1-20 of  23

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  • MAIDA Osamu ID: 9000001506516

    The Institute of Scientific and Industrial Research, Osaka University (2001 from CiNii)

    Articles in CiNii:1

    • Ultrathin Silicon Oxynitride Layers with a Low Leakage Current Density Formed by Plasma Nitridation Using Low Energy Electron Impact and Chemical Oxidation (2001)
  • MAIDA Osamu ID: 9000004968864

    Osaka University (2000 from CiNii)

    Articles in CiNii:5

    • SiO_2 Etching and Formation fo Si Oxide and Nitride Induced by Sofx X-ray from SPring-8 Undulator (2000)
    • SiO_2 Etching Induced by Soft X-ray from Figure-8 Undulator (1999)
    • Preparation of PTFE Low-k Thin Film Deposited by Soft X-ray Ablation (2000)
  • MAIDA Osamu ID: 9000005746348

    The Institute of Scientific and Industrial Research, Osaka University (2001 from CiNii)

    Articles in CiNii:5

    • Preparation and Characterization of High-k Lanthanoid Oxide Thin Films Deposited by Pulsed Laser Deposition (2001)
    • Evaluation of Interface SiO_x Transition Layer by Oscillatory Tunneling Current-Voltage Characteristics in Photo-CVD SiO_2-Si Diode (1998)
    • Optical Characterization of Gate Oxide Charging Damage by Photoreflectance Spectroscopy (1999)
  • MAIDA Osamu ID: 9000015593790

    Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University (2003 from CiNii)

    Articles in CiNii:1

    • Preparation and Characterization of High-k Praseodymium and Lanthanoid Oxide Thin Films Prepared by Pulsed Laser Deposition (2003)
  • MAIDA Osamu ID: 9000107334811

    Department of Physical Science, Graduate School of Engineering Science, Osaka University (2001 from CiNii)

    Articles in CiNii:1

    • Evaporation and Expansion of Poly-tetra-fluoro-ethylene Induced by Irradiation of Soft X-Rays from a Figure-8 Undulator (2001)
  • MAIDA Osamu ID: 9000107362295

    Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University (2001 from CiNii)

    Articles in CiNii:1

    • Synchrotron Radiation-Induced Nitrization and Oxidation on Si Surface at Low Temperature (2001)
  • MAIDA Osamu ID: 9000107376838

    Japan Synchrotron Radiation Research Institute (2003 from CiNii)

    Articles in CiNii:1

    • Preparation and Characterization of Fluorocarbon Thin Films Deposited by Soft X-Ray Ablation of Polytetrafluoroethylene (2003)
  • Maida Osamu ID: 1000040346177

    Graduate school of engineering, Osaka university (2010 from CiNii)

    Articles in CiNii:17

    • Fabrication of the a-Si Solar Cells with the Light Trapping Structure by the Al_2O_3 Fine Particles (2007)
    • シアン処理によるシリコン欠陥準位の消滅と太陽電池の高性能化 (特集 大阪大学産業科学研究所 マテリアルインテグレーション--材料・生体・情報の融合を目指して(2)) (2002)
    • Atomic Density and Valence Band Structure of Ultra Thin SiO_2/Si Structure (2001)
  • Maida Osamu ID: 9000252926518

    Osaka University (2000 from CiNii)

    Articles in CiNii:1

    • SiO<SUB>2</SUB> Etching and Formation of Si Oxide and Nitride Induced by Soft X-ray from SPring-8 Undulator (2000)
  • Maida Osamu ID: 9000258151852

    Department of Physical Science, Graduate School of Engineering Science, Osaka University,<BR> 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan (2000 from CiNii)

    Articles in CiNii:1

    • Optical Characterization of Gate Oxide Charging Damage by Photoreflectance Spectroscopy. (2000)
  • Maida Osamu ID: 9000258156911

    Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan|Japan Synchrotron Radiation Research Institute, Experimental Facilities Division, SPring-8, Sayo, Hyogo 678-5198, Japan (2001 from CiNii)

    Articles in CiNii:1

    • Synchrotron Radiation-Induced Nitrization and Oxidation on Si Surface at Low Temperature. (2001)
  • Maida Osamu ID: 9000258167564

    Institute of Scientific and Industrial Research, Osaka University (2003 from CiNii)

    Articles in CiNii:1

    • Preparation and Characterization of Fluorocarbon Thin Films Deposited by Soft X-Ray Ablation of Polytetrafluoroethylene (2003)
  • Maida Osamu ID: 9000283186324

    Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University (2003 from CiNii)

    Articles in CiNii:1

    • Preparation and Characterization of High-.KAPPA. Praseodymium and Lanthanoid Oxide Thin Films Prepared by Pulsed Laser Deposition. (2003)
  • Maida Osamu ID: 9000347215396

    Japan Society of Applied Physics (2015 from CiNii)

    Articles in CiNii:1

    • Semiconducting properties of multilayered single-crystalline CVD diamond having heavily boron-doped thin layers with different structures (2015)
  • Maida Osamu ID: 9000347215411

    The Japan Society of Applied Physics (2015 from CiNii)

    Articles in CiNii:1

    • Fabrication of single-crystalline CVD diamond with periodic thin columnar structure and its application to particle detectors (2015)
  • Maida Osamu ID: 9000401679964

    Articles in CiNii:1

    • Evaluation of Interface SiOxTransition Layer in Ultrathin SiO2Film by Oscillatory Tunneling Current-Voltage Characteristics in Photo-CVD SiO2-Si Diode (1999)
  • Maida Osamu ID: 9000401688231

    Articles in CiNii:1

    • Optical Characterization of Gate Oxide Charging Damage by Photoreflectance Spectroscopy (2000)
  • Maida Osamu ID: 9000401697651

    Articles in CiNii:1

    • Evaporation and Expansion of Poly-tetra-fluoro-ethylene Induced by Irradiation of Soft X-Rays from a Figure-8 Undulator (2001)
  • Maida Osamu ID: 9000401699387

    Articles in CiNii:1

    • Synchrotron Radiation-Induced Nitrization and Oxidation on Si Surface at Low Temperature (2001)
  • Maida Osamu ID: 9000401715570

    Articles in CiNii:1

    • Preparation and Characterization of High-kPraseodymium and Lanthanoid Oxide Thin Films Prepared by Pulsed Laser Deposition (2003)
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