Search Results1-5 of  5

  • MARUI Toshiharu ID: 9000004785379

    OKI Electric Industry (2009 from CiNii)

    Articles in CiNii:16

    • Fabrication of low ohmic contacts using selective area growth with MOCVD (2006)
    • Recessed gate structure MIS-AlGaN/GaN-HEMT with SiN gate insulator deposited by Thermal CVD (2009)
    • Stress Effects of Passivation Film on AlGaN/GaN-HEMT Characteristics (2004)
  • MARUI Toshiharu ID: 9000006838474

    Corporate Research and Development Center, Oki Electric Industry Co., Ltd. (2009 from CiNii)

    Articles in CiNii:5

    • Effects of a Thermal CVD SiN Passivation Film on AlGaN/GaN HEMTs (2008)
    • Comparisons of SiN Passivation Film Deposited by PE-CVD and T-CVD Method for AlGaN/GaN HEMTs on SiC Substrate (2009)
    • AlGaN/GaN-HEMTs on SiC with SiN Passivation Film Grown by Thermal CVD (2008)
  • MARUI Toshiharu ID: 9000107341978

    Corporate Research and Development Center, Oki Electric Industry Co., Ltd. (2009 from CiNii)

    Articles in CiNii:1

    • 12.88W/mm GaN High Electron Mobility Transistor on Silicon Substrate for High Voltage Operation (2009)
  • Marui Toshiharu ID: 9000003558700

    Department of Physics, Graduate School of Science, Osaka University (2003 from CiNii)

    Articles in CiNii:1

    • Infrared Emission in InGaP/GaAs Hetero-junction (2003)
  • Marui Toshiharu ID: 9000401566351

    Articles in CiNii:1

    • 12.88 W/mm GaN High Electron Mobility Transistor on Silicon Substrate for High Voltage Operation (2009)
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