Search Results1-20 of  32

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  • MARUNO Shigemitsu ID: 9000004746168

    Advanced Technology R&D Center, Mitsubishi Electric Corporation (2003 from CiNii)

    Articles in CiNii:5

    • Excellent Si epitaxial layer formation for deep sub-micron MOSFETs with elevated source/drain structures by UHV-CVD (1998)
    • Isothermal capcitance transient spectroscopy of pseudomorphic high-electron-mobility transistors (2003)
    • Sub-0.1μm CMOS Technology : Elevated Source/Drain MOSFETs (2000)
  • MARUNO Shigemitsu ID: 9000005548943

    Advanced Technology R&D Center. Mitsubishi Electric Corporation (2001 from CiNii)

    Articles in CiNii:12

    • Self-Aligned Pocket Implantation into Elevated Source/Drain MOSFETs for Reduction of Junction Capacitance and Leakage Current (2000)
    • Formation of Diamond Films by Intermittent Discharge Plasma Chemical Vapor Deposition (<Special Issue> Plasma Processing) (1994)
    • Change Optical Transmission Spectra Ag Discontinuous Films Due to Aging (1996)
  • MARUNO Shigemitsu ID: 9000005717149

    Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT-ATP), c (1997 from CiNii)

    Articles in CiNii:1

    • Electron-Beam-Induced Selective Thermal Decomposition of Ultrathin SiO_2 Layers Used in Nanofabrication (1997)
  • MARUNO Shigemitsu ID: 9000017511673

    三菱電機株式会社 人材開発センター (2011 from CiNii)

    Articles in CiNii:3

    • Science Program on Photovoltaic Power Generation in Elementary School (2010)
    • Science Education Support Class "Heat Transfer Mechanisms" (2011)
    • 10-329 Science program on photovoltaic power generation in elementary school (2011)
  • MARUNO Shigemitsu ID: 9000107334237

    Advanced Technology R&D Center, Mitsubishi Electric Corporation (2001 from CiNii)

    Articles in CiNii:1

    • A Dual-Gate Complementary Metal-Oxide-Semiconductor Technology with Novel Self-Aligned Pocket Implantation which Takes Advantage of Elevated Source/Drain Configurations (2001)
  • MARUNO Shigemitsu ID: 9000401434406

    Articles in CiNii:1

    • 3-335 Science education support for students by Mitsubishi Electric Corporation:: Science lover man promotion by delivery experiment course (2010)
  • Maruno Shigemitsu ID: 9000252757415

    Institute of Scientific and Industrial Research, Osaka University (1982 from CiNii)

    Articles in CiNii:1

    • Enhancement of Surface Plasmon excitation by Low-Energy Electron due to Surface Resonance on Si (001)–2×1 (1982)
  • Maruno Shigemitsu ID: 9000252949263

    Articles in CiNii:1

    • Dispersion of Surface-Plasmon at Clean Si(001)-2×1 Surface (1981)
  • Maruno Shigemitsu ID: 9000252952003

    The Institute of Scientific and Industrial Research, Osaka University (1982 from CiNii)

    Articles in CiNii:1

    • Inelastic Low Energy Electron Diffraction Measurements of Hydrogen Adsorbed Si (001) Surfaces: 2×1:H and 1×1: :2H (1982)
  • Maruno Shigemitsu ID: 9000252953247

    The Institute of Scientific and Industrial Research, Osaka University (1983 from CiNii)

    Articles in CiNii:1

    • Surface Plasmon Dispersions of Ag Adsorbed Si(111) Surfaces Studied by Angle-Resolved Electron Energy Loss Spectroscopy (1983)
  • Maruno Shigemitsu ID: 9000252955028

    Central Research Laboratory, Mitsubishi Electric Corporation (1984 from CiNii)

    Articles in CiNii:1

    • Silicon Epitaxial Growth by the Radical Beam of Glow-Discharge Decomposed Silane (1984)
  • Maruno Shigemitsu ID: 9000258134780

    Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT–ATP), c/o National Institute for Advanced Interdisciplinary Research (NAIR), 1–1–4 Higashi, Tsukuba, Ibaraki 305, Japan (1997 from CiNii)

    Articles in CiNii:1

    • Electron-Beam-Induced Selective Thermal Decomposition of Ultrathin SiO2 Layers Used in Nanofabrication. (1997)
  • Maruno Shigemitsu ID: 9000258147919

    Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8–1–1 Tsukaguchi–Honmachi, Amagasaki, Hyogo 661–8661, Japan (1999 from CiNii)

    Articles in CiNii:1

    • Si Deposition into Fine Contact Holes by Ultrahigh-Vacuum Chemical Vapor Deposition. (1999)
  • Maruno Shigemitsu ID: 9000258150140

    Advanced Technology R&D Center, Mitsubishi Electric Corporation, 4-1, Mizuhara, Itami, Hyogo 664-8641, Japan (2000 from CiNii)

    Articles in CiNii:1

    • Parasitic Resistance Reduction in Deep Submicron Dual-Gate Transistors with Partially Elevated Source/Drain Extension Regions Fabricated by Complementary Metal-Oxide-Semiconductor Technologies. (2000)
  • Maruno Shigemitsu ID: 9000392689986

    Articles in CiNii:1

    • Inelastic Low Energy Electron Diffraction Measurements of Hydrogen Adsorbed Si (001) Surfaces: 2×1:H and 1×1: :2H (1982)
  • Maruno Shigemitsu ID: 9000392690081

    Articles in CiNii:1

    • Enhancement of Surface Plasmon excitation by Low-Energy Electron due to Surface Resonance on Si (001)–2×1 (1982)
  • Maruno Shigemitsu ID: 9000392691403

    Articles in CiNii:1

    • Silicon Epitaxial Growth by the Radical Beam of Glow-Discharge Decomposed Silane (1984)
  • Maruno Shigemitsu ID: 9000392691829

    Articles in CiNii:1

    • Surface Plasmon Dispersions of Ag Adsorbed Si(111) Surfaces Studied by Angle-Resolved Electron Energy Loss Spectroscopy (1983)
  • Maruno Shigemitsu ID: 9000401589753

    Articles in CiNii:1

    • Dispersion of Surface-Plasmon at Clean Si(001)-2×1 Surface (1981)
  • Maruno Shigemitsu ID: 9000401591299

    Articles in CiNii:1

    • Enhancement of Surface Plasmon excitation by Low-Energy Electron due to Surface Resonance on Si (001)-2×1 (1982)
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