Search Results1-20 of  89

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  • Masahara Meishoku ID: 9000025069109

    Articles in CiNii:1

    • Fabrication of a Vertical-Channel Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor Using a Neutral Beam Etching (2006)
  • Masahara Meishoku ID: 9000025096469

    Articles in CiNii:1

    • Demonstration and Analysis of Accumulation-Mode Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor (Special Issue: Solid State Devices & Materials) (2006)
  • Masahara Meishoku ID: 9000025096473

    Articles in CiNii:1

    • Investigation of N-Channel Triple-Gate Metal-Oxide-Semiconductor Field-Effect Transistors on (100) Silicon on Insulator Substrate (Special Issue: Solid State Devices & Materials) (2006)
  • Masahara Meishoku ID: 9000241500844

    Articles in CiNii:1

    • Fabrication and Demonstration of 3-nm-Channel-Length Junctionless Field-Effect Transistors on Silicon-on-Insulator Substrates Using Anisotropic Wet Etching and Lateral Diffusion of Dopants (Special Issue : Solid State Devices and Materials) (2013)
  • KOH-MASAHARA Meishoku ID: 9000005914974

    National Institute of Advanced Industrial Science and Technology (2001 from CiNii)

    Articles in CiNii:1

    • Ffabrication of Adenosine Triphosphate-Molecule Recognition Chip by Means of Bioluminous Enzyme Luciferase (2001)
  • Koh-Masahara Meishoku ID: 9000258154676

    National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan (2001 from CiNii)

    Articles in CiNii:1

    • Fabrication of Adenosine Triphosphate-Molecule Recognition Chip by Means of Bioluminous Enzyme Luciferase. (2001)
  • Koh-Masahara Meishoku ID: 9000401702687

    Articles in CiNii:1

    • Fabrication of Adenosine Triphosphate-Molecule Recognition Chip by Means of Bioluminous Enzyme Luciferase (2001)
  • MASAHARA Meishoku ID: 9000001814467

    Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) (2012 from CiNii)

    Articles in CiNii:8

    • Fabrication of a Vertical-Channel Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor Using a Neutral Beam Etching (2006)
    • Investigation of N-Channel Triple-Gate MOSFETs on (100) SOI Substrate (2005)
    • Enhancing Noise Margins of Fin-Type Field Effect Transistor Static Random Access Memory Cell by Using Threshold Voltage-Controllable Flexible-Pass-Gates (2009)
  • MASAHARA Meishoku ID: 9000004746889

    Articles in CiNii:38

    • Vertical Double-Gate MOSFET Device Technology (2006)
    • Static Noise Margin Enhancement by Flex-Pass-Gate SRAM (2008)
    • Metal-Gate FinFET Technology (2009)
  • MASAHARA Meishoku ID: 9000021671410

    Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) (2012 from CiNii)

    Articles in CiNii:1

    • A 0.7-V Opamp in Scaled Low-Standby-Power FinFET Technology (2012)
  • MASAHARA Meishoku ID: 9000021671445

    AIST (2012 from CiNii)

    Articles in CiNii:1

    • High-Frequency Precise Characterization of Intrinsic FinFET Channel (2012)
  • MASAHARA Meishoku ID: 9000107306267

    Nanoelectronics Research Institute, AIST (2003 from CiNii)

    Articles in CiNii:1

    • Programmable Conductivity of Silicon Nanowires with Side Gates by Surface Charging (2003)
  • MASAHARA Meishoku ID: 9000107306334

    Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (2003 from CiNii)

    Articles in CiNii:1

    • Fabrication of ultrathin Si Channel Wall For Vertical Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor (DG MOSFET) by Using Ion-Bombardment-Retarded Etching (IBRE) (2003)
  • MASAHARA Meishoku ID: 9000107343906

    Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) (2005 from CiNii)

    Articles in CiNii:1

    • Device Design Consideration for V_<th>-Controllable Four-Terminal Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor (2005)
  • MASAHARA Meishoku ID: 9000107343913

    Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) (2005 from CiNii)

    Articles in CiNii:1

    • Demonstration of Dopant Profiling in Ultrathin Channels of Vertical-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect-Transistor by Scanning Nonlinear Dielectric Microscopy (2005)
  • MASAHARA Meishoku ID: 9000107377720

    National Institute of Advanced Industrial Science and Technology (AIST) (2003 from CiNii)

    Articles in CiNii:1

    • Fin-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Orientation-Dependent Etching and Electron Beam Lithography (2003)
  • MASAHARA Meishoku ID: 9000107377966

    Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (2003 from CiNii)

    Articles in CiNii:1

    • Novel Process for Vertical Double-Gate (DG) Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) Fabrication (2003)
  • MASAHARA Meishoku ID: 9000107386413

    National Institute of Advanced Industrial Science and Technology (2006 from CiNii)

    Articles in CiNii:1

    • New Fabrication Technology of Fin Field Effect Transistors Using Neutral-Beam Etching (2006)
  • MASAHARA Meishoku ID: 9000107388794

    National Institute of Advanced Industrial Science and Technology (AIST) (2004 from CiNii)

    Articles in CiNii:1

    • Cross-Sectional Channel Shape Dependence of Short-Channel Effects in Fin-Type Double-Gate Metal Oxide Semiconductor Field-Effect Transistors (2004)
  • MASAHARA Meishoku ID: 9000107388924

    Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) (2004 from CiNii)

    Articles in CiNii:1

    • P-Channel Vertical Double-Gate MOSFET Fabricated by Utilizing Ion-Bombardment-Retarded Etching Processs (2004)
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