Search Results1-20 of  33

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  • Matsuki Takeo ID: 9000024931356

    Articles in CiNii:1

    • Impact of gate metal-induced stress on performance modulation in gate-last metal-oxide-semiconductor field-effect transistors (Special issue: Dielectric thin films for future ULSI devices: science and technology) (2007)
  • Matsuki Takeo ID: 9000024933702

    Articles in CiNii:1

    • Interfacial reaction of TiN/HfSiON gate stack in high-temperature annealing for gate-first metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials) (2007)
  • Matsuki Takeo ID: 9000025017581

    Articles in CiNii:1

    • Study of a negative threshold voltage shift in positive bias temperature instability and a positive threshold voltage shift the negative bias temperature instability of yttrium-doped HfO2 gate dielectrics (Special issue: Solid state devices and materials) (2010)
  • Matsuki Takeo ID: 9000025030659

    Articles in CiNii:1

    • Improvement of device characteristics for TiN Gate p-type metal-insulator-semiconductor field-effect transistor with Al2O3-capped HfO2 dielectrics by controlling Al2O3 diffusion annealing process (Special issue: Solid state devices and materials) (2009)
  • Matsuki Takeo ID: 9000025031161

    Articles in CiNii:1

    • Dual-metal gate technology with metal-inserted full silicide stack and Ni-rich full silicide gate electrodes using a single Ni-rich full silicide phase for scaled high-k complementary metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials) (2009)
  • Matsuki Takeo ID: 9000025037710

    Articles in CiNii:1

    • Suppression of metamorphoses of metal/high-k gate stack by low-temperature, Cl-free SiN offset spacer, and its impact on scaled metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials) (2008)
  • Matsuki Takeo ID: 9000025096089

    Articles in CiNii:1

    • Area-Selective Post-Deposition Annealing Process Using Flash Lamp and Si Photoenergy Absorber for Metal/High-k Gate Metal-Insulator-Semiconductor Field-Effect Transistors with NiSi Source/Drain (Special Issue: Solid State Devices & Materials) (2006)
  • Matsuki Takeo ID: 9000025116644

    Articles in CiNii:1

    • Impact of high temperature annealing on traps in physical-vapor-deposited-TiN/SiO2/Si analyzed by positron annihilation (2007)
  • Matsuki Takeo ID: 9000237723445

    Articles in CiNii:2

    • Impact of nitrogen incorporation on low-frequency noise of polycrystalline silicon/TiN/HfO2/SiO2 gate-stack metal-oxide-semiconductor field-effect transistors (Special issue: Dielectric thin films for future electron devices: science and technology) (2011)
    • Behavior of low-frequency noise in n-channel metal-oxide-semiconductor field-effect transistors for different impurity concentrations (Special issue: Dielectric thin films for future electron devices: science and technology) (2011)
  • MATSUKI Takeo ID: 9000002168673

    Semiconductor Leading Edge Technologies, Inc. (Selete) (2006 from CiNii)

    Articles in CiNii:3

    • Extendibility of High Mobility HfSiON Gate Dielectrics (2005)
    • Mechanism of Threshold Voltage Reduction and Hole Mobility Enhancement in pMOSFETs Employing Sub-1nm EOT HfSiON by Use of Substrate Fluorine Ion Implantation (2006)
    • Hf and N Release from HfSiON in High-Temperature Annealing Induced by Oxygen Incorporation (2006)
  • MATSUKI Takeo ID: 9000004811292

    Microelectronics Res. Labs., NEC Corporation (1995 from CiNii)

    Articles in CiNii:1

    • 0.15 μm CMOS Devices with Reduced Junction Capacitance (1995)
  • MATSUKI Takeo ID: 9000004842887

    Research Department 1, Semiconductor Leading Edge Technologies, Inc. (2005 from CiNii)

    Articles in CiNii:1

    • Area Selective Flash Lamp Post-Deposition Annealing of High-k Film Using Si Photo Absorber for Metal Gate MISFETs with NiSi Source/Drain (2005)
  • MATSUKI Takeo ID: 9000004966399

    Microelectronics Research Laboratories NEC Corporation (1995 from CiNii)

    Articles in CiNii:3

    • Si-Surface Amorphization Effects and SEDAM Method for Low-Resistance TiSi_2 Film Formation (1995)
    • Characteristics of 0.15μm CMOS Devices (1994)
    • A Ferroelectric Capacitor over Bit-line (F-COB) Cell for Nonvolatile Ferroelectric Memories (1995)
  • MATSUKI Takeo ID: 9000005903479

    ULSI Device Development Laboratory, NEC Corporation (2000 from CiNii)

    Articles in CiNii:1

    • Low Temperature Recovery of Ru/(Ba, Sr)TiO_3/Ru Capacitors Degraded by Forming Gas Annealing (2000)
  • MATSUKI Takeo ID: 9000006001582

    Waseda University:JST-CREST (2011 from CiNii)

    Articles in CiNii:6

    • Experimental study on improvement of the Fermi-level pinning in metal/HfSiON gate stack (2007)
    • Gate-first metal gate/dual high-k CMOS with low threshold voltages (2008)
    • A Thermally-Stable Sub-0.9nm EOT TaSix/HfSiON Gate Stack with High Electron Mobility, Suitable for Gate-First Fabrication of hp45 LOP Devices (2006)
  • MATSUKI Takeo ID: 9000107334974

    System LSI Operations Unit, NEC Corporation (2001 from CiNii)

    Articles in CiNii:1

    • Analysis of Processing Damage on a Ferroelectric SrBi_2Ta_2O_9 Capacitor for Ferroelectric Random Access Memory Device Febrication (2001)
  • Matsuki Takeo ID: 9000058487526

    Articles in CiNii:1

    • Fabrication of High-Mobility Nitrided Hafnium Silicate Gate Dielectrics with Sub-1-nm Equivalent Oxide Thickness Using Plasma Nitridation and High-Temperature Postnitridation Annealing (2006)
  • Matsuki Takeo ID: 9000238771515

    Renesas Electronics Corp. (2012 from CiNii)

    Articles in CiNii:1

    • C-11-2 Influence of Air Exposure after SiON Formation on the Gate-Dielectric Breakdown (2012)
  • Matsuki Takeo ID: 9000258151874

    ULSI Device Development Laboratory, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan (2000 from CiNii)

    Articles in CiNii:1

    • Low Temperature Recovery of Ru/(Ba, Sr)TiO3/Ru Capacitors Degraded by Forming Gas Annealing. (2000)
  • Matsuki Takeo ID: 9000401688257

    Articles in CiNii:1

    • Low Temperature Recovery of Ru/(Ba, Sr)TiO3/Ru Capacitors Degraded by Forming Gas Annealing (2000)
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