Search Results1-20 of  43

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  • MATSUMOTO Koh ID: 9000000103818

    Tsukuba Laboratories, Nippon Sanso Corporation (1999 from CiNii)

    Articles in CiNii:1

    • Proposal of Near-Infrared Laser Diode Spectroscopy at 1.74μm for HCl Monitor in Semiconductor Processes (1999)
  • MATSUMOTO Koh ID: 9000004777031

    TN EMC LTD. (2012 from CiNii)

    Articles in CiNii:20

    • Study of Heterogenious Reaction between SiHCl_3 and Adsorbed H_2O on Stainless Steel Surface by Laser Diode Spectroscopy (1999)
    • Development of Atmospheric Pressure Metal Organic Vapor Phase Epitaxy Technology for GaN and Related Alloys (2003)
    • Present Status and Challenge of Metal Organic Vapor Phase Epitaxy Equipment for the Epitaxial Growth of GaN Power Electronic Devices on Silicon Substrate (2011)
  • MATSUMOTO Koh ID: 9000005619896

    Tsukuba Laboratory, NIPPON SANSO CO. (1993 from CiNii)

    Articles in CiNii:1

    • Hydrostatic Pressure Dependence of Eg-100 meV Photoluminescence Emissions in n-Type AlGaAs (1993)
  • MATSUMOTO Koh ID: 9000006579597

    Leading Edge Technology Development Department, Business Strategy Planning Division, Electronics Group, TAIYO NIPPON SANSO Corporation (2007 from CiNii)

    Articles in CiNii:3

    • Effects of trace moisture in NH_3 gas on electroluminescence intensity of InGaN LED : Moisture control in NH_3 gas for MOVPE growth of LED structure (2007)
    • Effects of trace moisture in NH_3 gas on electroluminescence intensity of InGaN LED : Moisture control in NH_3 gas for MOVPE growth of LED structure (2007)
    • Effects of trace moisture in NH_3 gas on electroluminescence intensity of InGaN LED : Moisture control in NH_3 gas for MOVPE growth of LED structure (2007)
  • MATSUMOTO Koh ID: 9000014441658

    NIPPONSANSO Corp.Tsukuba Lab. (1999 from CiNii)

    Articles in CiNii:7

    • Gas Materials for Surface Treatment (1998)
    • MOVPE reactor for nitride semiconductors (1999)
    • 第4回ケミカルビームエピタキシー国際会議 : (4th International Conference on Chemical Beam Epitaxy) 報告 (1993)
  • MATSUMOTO Koh ID: 9000019955457

    TN EMC Ltd. (2011 from CiNii)

    Articles in CiNii:1

    • Present Status and Challenge of Metal Organic Vapor Phase Epitaxy Equipment for the Epitaxial Growth of GaN Power Electronic Devices on Silicon Substrate (2011)
  • MATSUMOTO Koh ID: 9000020323327

    日本酸素 (株) (1988 from CiNii)

    Articles in CiNii:1

    • Lecture course on vacuum technology. Experiments on ultrahigh vacuum. 2. Materials. 4. Gas materials and their technological applications. 5. (1988)
  • MATSUMOTO Koh ID: 9000107377769

    NIPPON SANSO Corp. Tsukuba Laboratory (2003 from CiNii)

    Articles in CiNii:1

    • Quantum Chemical Mechanism of Heterogeneous Reaction between Trichlorosilane and Adsorbed Water (2003)
  • MATSUMOTO Koh ID: 9000253327274

    NIPPON SANSO Corp. Tsukuba Lab.|Electronics Business Dept. (1999 from CiNii)

    Articles in CiNii:1

    • MOVPE reactor for nitride semiconductors (1999)
  • MATSUMOTO Koh ID: 9000256906977

    Taiyo Nippon Sanso EMC Ltd. (2013 from CiNii)

    Articles in CiNii:1

    • Uniform Growth of AlGaN/GaN High Electron Mobility Transistors on 200mm Silicon (111) Substrate (2013)
  • MATSUMOTO Koh ID: 9000265570925

    Taiyo Nippon Sanso Corp. (2013 from CiNii)

    Articles in CiNii:1

    • The challenge to MOCVD for an InGaN LED : A strategy for reducing the cost with substrate materials (2013)
  • MATSUMOTO Koh ID: 9000367427564

    大陽日酸(株) (2017 from CiNii)

    Articles in CiNii:1

    • Impact of the AlN Nucleation Layer on GaN grown on Silicon Substrate by MOCVD for Power—devices (2017)
  • Matsumoto Koh-ichi ID: 9000002258502

    Articles in CiNii:8

    • Impersonal passive of English double object construction (2000)
    • Grammatical extension of concessive clause (2000)
    • Double Object Construction Including Provide-Type Verbs in Early Modern English (2004)
  • Matsumoto Koh ID: 9000006651536

    大陽日酸(株)電子機材事業本部事業戦略推進部 (2008 from CiNii)

    Articles in CiNii:1

    • 7th International Conference on Nitrides Semiconductors (ICNS-7) (2008)
  • Matsumoto Koh ID: 9000055063956

    Articles in CiNii:1

    • Evaluation of Performance of InGaN/GaN Light-Emitting Diodes Fabricated Using NH3with Intentionally Added H2O (2009)
  • Matsumoto Koh ID: 9000252767609

    Articles in CiNii:1

    • Effect of New Point-of-Use Purifier for AsH<SUB>3</SUB> and PH<SUB>3</SUB> (1993)
  • Matsumoto Koh ID: 9000254553855

    Department of Material Physics, Faculty of Engineering Science, Osaka University (1978 from CiNii)

    Articles in CiNii:1

    • Two Spin Ordered States under a Magnetic Field along Different Crystalline Axis in Ni(NO<SUB>3</SUB>)<SUB>2</SUB>·4H<SUB>2</SUB>O (1978)
  • Matsumoto Koh ID: 9000254554723

    Articles in CiNii:1

    • Field Induced Spin Ordering in a Weakly-Coupled-Pair System: Ni(NO<SUB>3</SUB>)<SUB>2</SUB>·6H<SUB>2</SUB>O (1979)
  • Matsumoto Koh ID: 9000254555601

    Articles in CiNii:1

    • Heat Capacity of a Strongly One-Dimensional Antiferromagnet Cu(C<SUB>6</SUB>H<SUB>5</SUB>COO)<SUB>2</SUB>·3H<SUB>2</SUB>O —Field-Induced Crossover of Spin-Dimensionality— (1980)
  • Matsumoto Koh ID: 9000258137971

    Tsukuba Lab., Nippon Sanso Corp., 10 Ohkubo, Tsukuba 300–26, Japan (1997 from CiNii)

    Articles in CiNii:1

    • 1.95-.MU.m-wavelength InGaAs/InGaAsP Laser with Compressively Strained Quantum Well Active Layer. (1997)
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