Search Results1-20 of  282

  • Matsunami Hiroyuki ID: 9000025071270

    Articles in CiNii:1

    • Abnormal out-diffusion of epitaxially doped boron in 4H-SiC caused by implantation and annealing （2007）
  • MATSUNAMI Hiroyuki ID: 9000001104879

    Department of Electronic Science and Engineering, Kyoto University （2003 from CiNii）

    Articles in CiNii:1

    • Effects of C/Si Ratio in Chemical Vapor Deposition of 4H-SiC(1120) and (0338) （2003）
  • MATSUNAMI Hiroyuki ID: 9000001421054

    Innovation Plaza Kyoto, Japan Science and Technology Agency （2005 from CiNii）

    Articles in CiNii:1

    • Breakthrough in the Evolution of Semiconductor SiC （2005）
  • MATSUNAMI Hiroyuki ID: 9000001687980

    Department of Electronic Science and Engineering, Kyoto University （2005 from CiNii）

    Articles in CiNii:1

    • New Two-Diode Model for Detailed Analysis of Multicrystalline Silicon Solar Cells （2005）
  • MATSUNAMI Hiroyuki ID: 9000001721256

    Department of Electronic Science and Engineering, Kyoto University （1995 from CiNii）

    Articles in CiNii:1

    • Semiconductor Silicon Carbide for Power Electronic Application （1995）
  • MATSUNAMI Hiroyuki ID: 9000002165016

    Department of Electronics Science and Engineering, Kyoto University （1999 from CiNii）

    Articles in CiNii:1

    • High-quality Epitaxial Growth of SiC and State-of-the-art Device Development （1999）
  • MATSUNAMI Hiroyuki ID: 9000003244184

    Department of Electrical Engineering, Kyoto University （1969 from CiNii）

    Articles in CiNii:2

    • Negative Magnetoresistance in Ag Doped p-CdSb （1967）
    • Electrical properties of undoped p-CdSb at low temperatures （1969）
  • MATSUNAMI Hiroyuki ID: 9000003272314

    Department of Electrical Engineering, Kyoto University （1971 from CiNii）

    Articles in CiNii:1

    • Galvanomagnetic Effects in Single Crystals of Cadmium Arsenide （1971）
  • MATSUNAMI Hiroyuki ID: 9000004777015

    京都大学大学院工学研究科 （2004 from CiNii）

    Articles in CiNii:11

    • Growth of Cubic GaN by Metal Organic Molecular Beam Epitaxy （2000）
    • Applied physics in development of semiconductor SiC （2004）
    • アモルファス半導体材料の特性と応用 (アモルファス材料の応用開発を探る<特集>) （1982）
  • MATSUNAMI Hiroyuki ID: 9000004837715

    Department of Electronic Science and Engineering, Kyoto University （2004 from CiNii）

    Articles in CiNii:35

    • Structure Analysis of A-Si_<1-x>C_x:H with Dominant Tetrahedral Si-C Bonds Deposited by Hybrid-Plasma Chemical Vapor Deposition （1997）
    • Surface Morphological Structures of 4H-, 6H- and 15R-SiC (0001) Epitaxial Layers Grown by Chemical Vapor Deposition （2001）
    • High-Voltage 4H-SiC Schottky Barrier Diodes Fabricated on (033^^-8) with Closed Micropipes （2003）
  • MATSUNAMI Hiroyuki ID: 9000004890438

    Department of Electronic Science and Engineering, Kyolo University （2003 from CiNii）

    Articles in CiNii:1

    • Recent Progress in Epitaxial Growth of SiC for Power Devices （2003）
  • MATSUNAMI Hiroyuki ID: 9000004890489

    Department of Electronic Science and Engineering, Kyoto University （2003 from CiNii）

    Articles in CiNii:1

    • High-Voltage 4H-SiC pn Diodes Fabricated by p-Type Ion Implantation （2003）
  • MATSUNAMI Hiroyuki ID: 9000005298821

    Graduate School of Engineering, Utsunomiya University （2002 from CiNii）

    Articles in CiNii:1

    • Progressive and Lossless Coding for Still Images Using DCT and Predictive Coding （2002）
  • MATSUNAMI Hiroyuki ID: 9000005528037

    Department of Electronics, Faculty of Engineering, Kyoto University （1980 from CiNii）

    Articles in CiNii:3

    • Optical Properties of β-SiC Crystals Prepared by Chemical Vapor Deposition （1975）
    • Blue-Emitting Diodes of 6H-SiC Prepared by Chemical Vapor Deposition （1980）
    • Deposition and Properties of Polycrystalline Si for Solar Cells : I-1: SILICON SOLAR CELLS (I) （1980）
  • MATSUNAMI Hiroyuki ID: 9000005532791

    Department of Electronics, Kyoto University （1980 from CiNii）

    Articles in CiNii:2

    • MIS Silicon Solar Cells with In_2O_3 Antireflective Coating （1977）
    • Fundamental Properties of MIS Solar Cells : I-2: SILICON SOLAR CELLS (II) （1980）
  • MATSUNAMI Hiroyuki ID: 9000005534336

    Department of Electronics, Faculty of Engineering, Kyoto University （1980 from CiNii）

    Articles in CiNii:1

    • Lattice-Matched LPE Growth of In_<1-x>Ga_xP_<1-y>As_y Layers on (100) GaAs Substrates （1980）
  • MATSUNAMI Hiroyuki ID: 9000005534667

    Department of Electronics, Faculty of Engineering, Kyoto University （1980 from CiNii）

    Articles in CiNii:2

    • Defect Luminescence in SiC Light-Emitting Diodes （1980）
    • Photon Assisted Tunneling in SiC LED's Prepared by Overcompensation Method （1980）
  • MATSUNAMI Hiroyuki ID: 9000005567518

    Department of Electrical Engineering, Faculty of Engineering, Kyoto University （1995 from CiNii）

    Articles in CiNii:1

    • Nitrogen Ion Implantation in to 6H-SiC and Application to High-Temperature, Radiation-Hard Diodes （1995）
  • MATSUNAMI Hiroyuki ID: 9000005597305

    Department of Electronic Science and Engineering, Kyoto University （1999 from CiNii）

    Articles in CiNii:1

    • Determination of Minority-Carrier Lifetime in Multicrystalline Silicon Solar Cells using Current Transient Behaviors （1999）
  • MATSUNAMI Hiroyuki ID: 9000005600257

    Department of Electronics Science and Engineering, Kyoto University （1999 from CiNii）

    Articles in CiNii:1

    • Nitrogen Donor Concentrations and Its Energy Levels in 4H-SiC Uniquely Determined by a New Graphical Method Based on Hall-Effect Measurement （1999）
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