Search Results1-20 of  282

  • Matsunami Hiroyuki ID: 9000025071270

    Articles in CiNii:1

    • Abnormal out-diffusion of epitaxially doped boron in 4H-SiC caused by implantation and annealing (2007)
  • MATSUNAMI Hiroyuki ID: 9000001104879

    Department of Electronic Science and Engineering, Kyoto University (2003 from CiNii)

    Articles in CiNii:1

    • Effects of C/Si Ratio in Chemical Vapor Deposition of 4H-SiC(1120) and (0338) (2003)
  • MATSUNAMI Hiroyuki ID: 9000001421054

    Innovation Plaza Kyoto, Japan Science and Technology Agency (2005 from CiNii)

    Articles in CiNii:1

    • Breakthrough in the Evolution of Semiconductor SiC (2005)
  • MATSUNAMI Hiroyuki ID: 9000001687980

    Department of Electronic Science and Engineering, Kyoto University (2005 from CiNii)

    Articles in CiNii:1

    • New Two-Diode Model for Detailed Analysis of Multicrystalline Silicon Solar Cells (2005)
  • MATSUNAMI Hiroyuki ID: 9000001721256

    Department of Electronic Science and Engineering, Kyoto University (1995 from CiNii)

    Articles in CiNii:1

    • Semiconductor Silicon Carbide for Power Electronic Application (1995)
  • MATSUNAMI Hiroyuki ID: 9000002165016

    Department of Electronics Science and Engineering, Kyoto University (1999 from CiNii)

    Articles in CiNii:1

    • High-quality Epitaxial Growth of SiC and State-of-the-art Device Development (1999)
  • MATSUNAMI Hiroyuki ID: 9000003244184

    Department of Electrical Engineering, Kyoto University (1969 from CiNii)

    Articles in CiNii:2

    • Negative Magnetoresistance in Ag Doped p-CdSb (1967)
    • Electrical properties of undoped p-CdSb at low temperatures (1969)
  • MATSUNAMI Hiroyuki ID: 9000003272314

    Department of Electrical Engineering, Kyoto University (1971 from CiNii)

    Articles in CiNii:1

    • Galvanomagnetic Effects in Single Crystals of Cadmium Arsenide (1971)
  • MATSUNAMI Hiroyuki ID: 9000004777015

    京都大学大学院工学研究科 (2004 from CiNii)

    Articles in CiNii:11

    • Growth of Cubic GaN by Metal Organic Molecular Beam Epitaxy (2000)
    • Applied physics in development of semiconductor SiC (2004)
    • アモルファス半導体材料の特性と応用 (アモルファス材料の応用開発を探る<特集>) (1982)
  • MATSUNAMI Hiroyuki ID: 9000004837715

    Department of Electronic Science and Engineering, Kyoto University (2004 from CiNii)

    Articles in CiNii:35

    • Structure Analysis of A-Si_<1-x>C_x:H with Dominant Tetrahedral Si-C Bonds Deposited by Hybrid-Plasma Chemical Vapor Deposition (1997)
    • Surface Morphological Structures of 4H-, 6H- and 15R-SiC (0001) Epitaxial Layers Grown by Chemical Vapor Deposition (2001)
    • High-Voltage 4H-SiC Schottky Barrier Diodes Fabricated on (033^^-8) with Closed Micropipes (2003)
  • MATSUNAMI Hiroyuki ID: 9000004890438

    Department of Electronic Science and Engineering, Kyolo University (2003 from CiNii)

    Articles in CiNii:1

    • Recent Progress in Epitaxial Growth of SiC for Power Devices (2003)
  • MATSUNAMI Hiroyuki ID: 9000004890489

    Department of Electronic Science and Engineering, Kyoto University (2003 from CiNii)

    Articles in CiNii:1

    • High-Voltage 4H-SiC pn Diodes Fabricated by p-Type Ion Implantation (2003)
  • MATSUNAMI Hiroyuki ID: 9000005298821

    Graduate School of Engineering, Utsunomiya University (2002 from CiNii)

    Articles in CiNii:1

    • Progressive and Lossless Coding for Still Images Using DCT and Predictive Coding (2002)
  • MATSUNAMI Hiroyuki ID: 9000005528037

    Department of Electronics, Faculty of Engineering, Kyoto University (1980 from CiNii)

    Articles in CiNii:3

    • Optical Properties of β-SiC Crystals Prepared by Chemical Vapor Deposition (1975)
    • Blue-Emitting Diodes of 6H-SiC Prepared by Chemical Vapor Deposition (1980)
    • Deposition and Properties of Polycrystalline Si for Solar Cells : I-1: SILICON SOLAR CELLS (I) (1980)
  • MATSUNAMI Hiroyuki ID: 9000005532791

    Department of Electronics, Kyoto University (1980 from CiNii)

    Articles in CiNii:2

    • MIS Silicon Solar Cells with In_2O_3 Antireflective Coating (1977)
    • Fundamental Properties of MIS Solar Cells : I-2: SILICON SOLAR CELLS (II) (1980)
  • MATSUNAMI Hiroyuki ID: 9000005534336

    Department of Electronics, Faculty of Engineering, Kyoto University (1980 from CiNii)

    Articles in CiNii:1

    • Lattice-Matched LPE Growth of In_<1-x>Ga_xP_<1-y>As_y Layers on (100) GaAs Substrates (1980)
  • MATSUNAMI Hiroyuki ID: 9000005534667

    Department of Electronics, Faculty of Engineering, Kyoto University (1980 from CiNii)

    Articles in CiNii:2

    • Defect Luminescence in SiC Light-Emitting Diodes (1980)
    • Photon Assisted Tunneling in SiC LED's Prepared by Overcompensation Method (1980)
  • MATSUNAMI Hiroyuki ID: 9000005567518

    Department of Electrical Engineering, Faculty of Engineering, Kyoto University (1995 from CiNii)

    Articles in CiNii:1

    • Nitrogen Ion Implantation in to 6H-SiC and Application to High-Temperature, Radiation-Hard Diodes (1995)
  • MATSUNAMI Hiroyuki ID: 9000005597305

    Department of Electronic Science and Engineering, Kyoto University (1999 from CiNii)

    Articles in CiNii:1

    • Determination of Minority-Carrier Lifetime in Multicrystalline Silicon Solar Cells using Current Transient Behaviors (1999)
  • MATSUNAMI Hiroyuki ID: 9000005600257

    Department of Electronics Science and Engineering, Kyoto University (1999 from CiNii)

    Articles in CiNii:1

    • Nitrogen Donor Concentrations and Its Energy Levels in 4H-SiC Uniquely Determined by a New Graphical Method Based on Hall-Effect Measurement (1999)
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