Search Results1-20 of  68

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  • MATSUO Seitaro ID: 9000002957575

    NTTアフティ(株) (2000 from CiNii)

    Articles in CiNii:1

    • Deposition of High Quality Thin Films Using ECR Plasma (2000)
  • MATSUO Seitaro ID: 9000003284655

    Department of Applied Science, Fuculty of Engineering, Kyushu University:(Present address) Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation (1973 from CiNii)

    Articles in CiNii:1

    • The dispersion of cyclotron waves in metals with Fermi surfaces slightly deviated from sphere or ellipsoid (1973)
  • MATSUO Seitaro ID: 9000004778878

    Articles in CiNii:3

    • High-resolution optical lithography using a new illumination system - Projection exposure method using oblique incidence illumination and pupil spatial filter - (1992)
    • 振幅透過率を調整した共役瞳フィルタと斜入射照明とを組み合わせた光リソグラフィ技術〔英文〕 (1995)
    • High-Speed Display Method of LSI Cross-Sectional Views - Pixel Model (1993)
  • MATSUO Seitaro ID: 9000005530728

    Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation (1976 from CiNii)

    Articles in CiNii:1

    • An Analytical Treatment on the Pattern Formation Process by Sputter Etching with a Mask (1976)
  • MATSUO Seitaro ID: 9000005531300

    Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation (1977 from CiNii)

    Articles in CiNii:1

    • Preferential SiO_2 Etching on St Substrate by Plasma Reactive Sputter Etching (1977)
  • MATSUO Seitaro ID: 9000005568417

    NTT LSI Laboratories (1995 from CiNii)

    Articles in CiNii:1

    • Wave Propagation in a Cylindrical Electron Cyclotron Resonance Plasma Chamber (1995)
  • MATSUO Seitaro ID: 9000005779720

    Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation (1981 from CiNii)

    Articles in CiNii:1

    • Very Steep Profile Resist Pattern Preparation by Reactive Ion Etching with Ar+CH_4 Gas Mixture (1981)
  • MATSUO Seitaro ID: 9000005901974

    NTT Telecommunications Energy Laboratories (2000 from CiNii)

    Articles in CiNii:1

    • Anisotropic Etching of Si and WSiN Using ECR Plasma of SF_6 - CF_4 Gas Mixture (2000)
  • MATSUO Seitaro ID: 9000020269245

    NTT LSI Laboratories (1988 from CiNii)

    Articles in CiNii:1

    • ECR plasma CVD technology. (1988)
  • MATSUO Seitaro ID: 9000021331612

    NTT LSI Lab. (1990 from CiNii)

    Articles in CiNii:1

    • ECR plasma technology. (1990)
  • MATSUO Seitaro ID: 9000253322832

    Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation. (1983 from CiNii)

    Articles in CiNii:1

    • Deposition (1983)
  • MATSUO Seitaro ID: 9000253325276

    NTT LSI Laboratiories (1991 from CiNii)

    Articles in CiNii:1

    • ECR plasma processing (1991)
  • MATSUO Seitaro ID: 9000253325490

    NTT LSI Laboratories. (1992 from CiNii)

    Articles in CiNii:1

    • High-resolution optical lithography using a new illumination system:Projection method using oblique incidence illumination and pupil spatial filter (1992)
  • MATSUO Seitaro ID: 9000254749466

    正会員 日本電信電話公社武蔵野電気通信研究所 (1975 from CiNii)

    Articles in CiNii:1

    • Topographic Characteristics of Ion-etched Surface (1975)
  • Matsuo Seitaro ID: 9000002882702

    日本電信電話公社武蔵野電気通信研究所 (1977 from CiNii)

    Articles in CiNii:4

    • イオンエッチ面の形成特性 (1976)
    • PATTERN FORMATION PROCESS BY ION ETCHING (1976)
    • Topographic Characteristics of Ion-etched Surface (1975)
  • Matsuo Seitaro ID: 9000252756720

    Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation (1981 from CiNii)

    Articles in CiNii:1

    • Very Steep Profile Resist Pattern Preparation by Reactive Ion Etching with Ar+CH<SUB>4</SUB> Gas Mixture (1981)
  • Matsuo Seitaro ID: 9000252943118

    Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation (1976 from CiNii)

    Articles in CiNii:1

    • An Analytical Treatment on the Pattern Formation Process by Sputter Etching with a Mask (1976)
  • Matsuo Seitaro ID: 9000252943414

    Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation (1977 from CiNii)

    Articles in CiNii:1

    • Preferential SiO<SUB>2</SUB> Etching on Si Substrate by Plasma Reactive Sputter Etching (1977)
  • Matsuo Seitaro ID: 9000252944719

    Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation (1978 from CiNii)

    Articles in CiNii:1

    • Etching Characteristics of Various Materials by Plasma Reactive Sputter Etching (1978)
  • Matsuo Seitaro ID: 9000252944854

    Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation (1978 from CiNii)

    Articles in CiNii:1

    • Effect of Dark Space in RF Glow Discharge on Plasma Etching Characteristics (1978)
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