Search Results1-20 of  67

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  • Matsuura Hideharu ID: 9000010420660

    Articles in CiNii:1

    • Characterization of defects in semiconductors (2007)
  • Matsuura Hideharu ID: 9000025063743

    Articles in CiNii:1

    • Effect of intrinsic defects in high-purity semi-insulating 4H-SiC on reverse current-voltage characteristics of Schottky barrier diodes (2009)
  • MATSUURA Hideharu ID: 1000060278588

    Osaka Electro-Communication University (2012 from CiNii)

    Articles in CiNii:22

    • Report on "Refresh" science school held by Kansai Branch (2005)
    • Evaluation of Intrinsic Defects in Sacrificial Oxidized High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy (2011)
    • Proposal of Optimized Structure of X-Ray Detectors Reducing Effect of Fixed Charges at SiO_2/Si interface (2011)
  • MATSUURA Hideharu ID: 9000000228361

    Department of Electronics, Osaka Electro-Communication University (1997 from CiNii)

    Articles in CiNii:2

    • A Simple Graphical Method for Determining Densities and Energy Levels of Donors and Acceptors in Semiconductor from Temperature Dependence of Majority Carrier Concentration (1997)
    • A Simple Grahical Method for Evaluating the Polarization and Relaxation Times of Dipoles or Densities and Energy Levels of Traps in a Dielectric Film from Transient Discharge Current (1997)
  • MATSUURA Hideharu ID: 9000005555830

    Department of Electronic Engineering and Computer Science, Osaka Electro-Communication University (2002 from CiNii)

    Articles in CiNii:8

    • Evaluation of Densities and Energy Levels of Donors and Acceptors in Compensated Semiconductor from Temperature Dependence of Majority Carrier Concentration (1996)
    • A Simple Graphical Method for Evaluating Dipole Relaxation Time in Dielectric (1996)
    • An Improved Method for Determining Densities and Energy Levels of Dopants and Traps by Means of Hall-Effect Measurement (1999)
  • MATSUURA Hideharu ID: 9000005572438

    Department of Electronics, Osaka Electro-Communication University (1996 from CiNii)

    Articles in CiNii:1

    • Evaluating Densities and Energy Levels of Impurities with Close Energy Levels in Semiconductor from Temperature Dependence of Majority-Carrier Concentration (1996)
  • MATSUURA Hideharu ID: 9000005593933

    Department of Electronics, Osaka Electro-Communication University (1998 from CiNii)

    Articles in CiNii:1

    • Evaluation of Hole Traps in 10-MeV Proton-Irradiated p-Type Silicon from Hall-Effect Measurements (1998)
  • MATSUURA Hideharu ID: 9000005600251

    Department of Electronics, Osaka Electro-Communication University (1999 from CiNii)

    Articles in CiNii:1

    • Nitrogen Donor Concentrations and Its Energy Levels in 4H-SiC Uniquely Determined by a New Graphical Method Based on Hall-Effect Measurement (1999)
  • MATSUURA Hideharu ID: 9000005689536

    Department of Electronics, Osaka Electro-Communication University (1998 from CiNii)

    Articles in CiNii:1

    • A New Structure of an N-Channel Junction Field-Effect Transistor Embedded in a Pin Diode for an X-Ray Detector (1998)
  • MATSUURA Hideharu ID: 9000005750924

    Department of Electronics, Osaka Electro-Communication University (2000 from CiNii)

    Articles in CiNii:1

    • Investigation of Transient Reverse Currents in X-Ray Detector Pin Diodes by Discharge Current Transient Spectroscopy (2000)
  • MATSUURA Hideharu ID: 9000005753026

    Department of Electronics, Kyoto University (1981 from CiNii)

    Articles in CiNii:1

    • Fundamental Properties of MIS Solar Cells Using Mg-p Si System : I-2: SINGLE CRYSTAL SILICON SOLAR CELLS (1981)
  • MATSUURA Hideharu ID: 9000005753645

    Department of Electronics, Kyoto University (1982 from CiNii)

    Articles in CiNii:1

    • Characteristics of Silicon Inversion Layer Solar Cells : II-2: SILICON SOLAR CELLS (3) (1982)
  • MATSUURA Hideharu ID: 9000107307483

    Department of Electric Engineering and Computer Science, Osaka Electro-Communication University (2003 from CiNii)

    Articles in CiNii:1

    • Annealing Behavior of Donorlike Defects Induced by High-Fluence Irradiation of High-Energy Particles in p-Type Silicon (2003)
  • MATSUURA Hideharu ID: 9000107308077

    Department of Electronics, Osaka Electro-Communication University (1996 from CiNii)

    Articles in CiNii:1

    • Evaluating Polarization in Dielectrics with Continuously Distributed Dipole Relaxation Time by Discharge Current Transient Spectroscopy (1996)
  • MATSUURA Hideharu ID: 9000404504031

    Department of Electrical and Electronic Engineering, Osaka Electro-Communication University (2016 from CiNii)

    Articles in CiNii:1

    • Tips for the measurement of a majority-carrier concentration and mobility (2016)
  • Matsuura Hideharu ID: 9000024957659

    Articles in CiNii:1

    • Si Substrate Suitable for Radiation-Resistant Space Solar Cells (2006)
  • Matsuura Hideharu ID: 9000024970228

    Articles in CiNii:1

    • Accurate Determination of Acceptor Densities and Acceptor Levels in Undoped InGaSb from Temperature Dependence of Hole Concentration (2006)
  • Matsuura Hideharu ID: 9000024970466

    Articles in CiNii:1

    • Accurate Determination of Density and Energy Level of B Acceptor in Diamond from Temperature Dependence of Hole Concentration (2006)
  • Matsuura Hideharu ID: 9000025036660

    Articles in CiNii:1

    • Characterization of intrinsic defects in high-purity high-resistivity p-type 6H-SiC (2008)
  • Matsuura Hideharu ID: 9000025045023

    Articles in CiNii:1

    • Mechanisms of reduction in hole concentration in Al-implanted p-type 6H-SiC by 1 MeV electron irradiation (2008)
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