Search Results1-20 of  32

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  • Matsuzawa Nobuyuki ID: 9000009564103

    Articles in CiNii:1

    • Chemically Amplified Si-contained Resist Using Silsesquoxane for ArF Lithography(CASUAL)and its Application to Bi-layer Resist Process (1997)
  • MATSUZAWA Nobuyuki N. ID: 9000005546568

    Articles in CiNii:11

    • Theoretical Estimation of Absorption Coefficients of Various Polymers at 13 nm (1999)
    • Diffusion Kinetic of Vapor-phase Silylation Process for ArF Lithography (1997)
    • Study of High Photo-speed Top Surface Imaging Process Using Chemically Amplified Resist (1998)
  • MATSUZAWA Nobuyuki ID: 9000001655474

    Yokohama Research Center Association of Super-advanced Electronics Technologies (ASET) (1998 from CiNii)

    Articles in CiNii:1

    • Top Surface Imaging (TSI) Resist Process (1998)
  • MATSUZAWA Nobuyuki ID: 9000014284984

    Oji Corn Starch Co., Ltd. (2009 from CiNii)

    Articles in CiNii:1

    • Studies on Mass Production and Application of Phosphoryl Oligosaccharides from Potato Starch (2009)
  • Matsuzawa Nobuyuki N. ID: 9000252776241

    Frontier Science Laboratories, SONY Corporation (1999 from CiNii)

    Articles in CiNii:1

    • Theoretical Estimation of Absorption Coefficients of Various Polymers at 13nm (1999)
  • Matsuzawa Nobuyuki N. ID: 9000253028739

    Association of Super-advanced Electronics Technologies (ASET) (1998 from CiNii)

    Articles in CiNii:1

    • Bilayer resists process for ArF lithography. (1998)
  • Matsuzawa Nobuyuki N. ID: 9000253028771

    Yokohama Research Center, Association of Super-advanced Electronics Technologies 292 Yoshida-cho (1998 from CiNii)

    Articles in CiNii:1

    • Theoretical and Experimental Study on the Silylation of Alcohol Units in ArF Lithography Resists. (1998)
  • Matsuzawa Nobuyuki N. ID: 9000258138635

    Yokohama Research Center, Association of Super–Advanced Electronics Technologies, 292 Yoshida–cho, Totsuka–ku, Yokohama 244–0817, Japan (1998 from CiNii)

    Articles in CiNii:1

    • Theoretical Calculations of Sensitivity of Deprotection Reactions for Acrylic Polymers for 193 nm Lithography II: Protection Groups Containing an Adamantyl Unit. (1998)
  • Matsuzawa Nobuyuki N. ID: 9000283312805

    Lithography Technology Department, Semiconductor Technology Development Group, Semiconductor Business Unit, Sony Corporation (2006 from CiNii)

    Articles in CiNii:1

    • Optimization of Dual-BARC Structures on Silicon Oxide and Nitride Layers to be Used for Hyper NA Immersion Lithography (2006)
  • Matsuzawa Nobuyuki N. ID: 9000401674901

    Articles in CiNii:1

    • Theoretical Calculations of Sensitivity of Deprotection Reactions for Acrylic Polymers for 193 nm Lithography II: Protection Groups Containing an Adamantyl Unit (1998)
  • Matsuzawa Nobuyuki N. ID: 9000401684624

    Articles in CiNii:1

    • Theoretical Calculation of Photoabsorption of Various Polymers in an Extreme Ultraviolet Region (1999)
  • Matsuzawa Nobuyuki ID: 9000252971933

    SONY Corporation Research Center (1990 from CiNii)

    Articles in CiNii:1

    • Optical Recording Characteristics of Dye/Polymer Systems (1990)
  • Matsuzawa Nobuyuki ID: 9000252978201

    SONY Corporation Research Center (1991 from CiNii)

    Articles in CiNii:1

    • Effect of the Blending of Binder Polymers on Recording Sensitivity of Dye/Polymer Optical Recording Media (1991)
  • Matsuzawa Nobuyuki ID: 9000252987542

    Sony Corporation Research Center (1993 from CiNii)

    Articles in CiNii:1

    • Structures of Carbon Deposits Formed on a Graphite Electrode during Fullerene Generation (1993)
  • Matsuzawa Nobuyuki ID: 9000253028248

    Association of Super-Advanced Electronics Technologies (ASET) (1997 from CiNii)

    Articles in CiNii:1

    • Diffusion Kinetic of Vapor-phase Silylation Process for ArF Lithography. (1997)
  • Matsuzawa Nobuyuki ID: 9000253028260

    Association of Super-Advanced Electronics Technologies (ASET) (1997 from CiNii)

    Articles in CiNii:1

    • Chemically Amplified Si-contained Resist Using Silsesquoxane for ArF Lithography (CASUAL) and its Application to Bi-Layer Resist Process. (1997)
  • Matsuzawa Nobuyuki ID: 9000253028768

    Association of Super-Advanced Electronics Technologies (ASST) 292 Yoshida-cho (1998 from CiNii)

    Articles in CiNii:1

    • Silylation for Carboxylic Acids. (1998)
  • Matsuzawa Nobuyuki ID: 9000253028779

    Yokohama Research Center, Association of Super-Advanced Electronics Technologies (ASET) 292 (1998 from CiNii)

    Articles in CiNii:1

    • Study of high photo-speed top surface imaging process using chemically amplified resist. (1998)
  • Matsuzawa Nobuyuki ID: 9000253029533

    Association of Super-Advanced Electronics Technologies (2000 from CiNii)

    Articles in CiNii:1

    • Development of Resist Materials for EUVL. (2000)
  • Matsuzawa Nobuyuki ID: 9000258123057

    Sony Corporation Research Center, 174 Fujitsuka–cho, Hodogaya–ku, Yokohama 240 (1994 from CiNii)

    Articles in CiNii:1

    • Carbon Microfibers Grown on Graphite Electrode During Fullerene Generation Using Composite Graphite Rods. (1994)
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