Search Results1-20 of  62

  • 1 / 4
  • Migita Shinji ID: 9000025070321

    Articles in CiNii:1

    • Extremely Scaled (~0.2 nm) Equivalent Oxide Thickness of Higher-k (k = 40) HfO₂ Gate Stacks Prepared by Atomic Layer Deposition and Oxygen-Controlled Cap Post-Deposition Annealing (Special Issue : Solid State Devices and Materials (1)) (2012)
  • Migita Shinji ID: 9000241500842

    Articles in CiNii:1

    • Fabrication and Demonstration of 3-nm-Channel-Length Junctionless Field-Effect Transistors on Silicon-on-Insulator Substrates Using Anisotropic Wet Etching and Lateral Diffusion of Dopants (Special Issue : Solid State Devices and Materials) (2013)
  • MIGITA Shinji ID: 9000002167449

    MIRAI-Advanced Semiconductor Research Center (MIRAI-ASRC), National Institute of Advanced Industrial Science and Technology (AIST) (2009 from CiNii)

    Articles in CiNii:2

    • Flat-band Voltage Tunability and No Depletion Effect of Poly-Si Gate CMOS with Nanometer-size Metal Dots at the Poly-Si/Dielectric Interface (2004)
    • Impact of Surface Hydrophilicization prior to Atomic Layer Deposition for HfO_2/Si Direct-Contact Gate Stacks (2009)
  • MIGITA Shinji ID: 9000004783358

    Articles in CiNii:40

    • Fabrication of High-k Gate Insulator Films by Atomic Layer Deposition and Their Properties Influenced by Substrate Hydrophilicity (2011)
    • The role of the high-k/SiO_2 interface in the control of the threshold voltage for high-k MOS devices (2008)
    • Extremely Scaled Equivalent Oxide Thickness of High-k (k=40) HfO_2 Gate Stacks Prepared by Atomic Layer Deposition and Ti Cap Anneal (2012)
  • MIGITA Shinji ID: 9000004871774

    National Institute of Advanced Industrial science and Technology (2001 from CiNii)

    Articles in CiNii:6

    • Evaluation of Ozone Condensation System by Thermal Decomposition Method (1997)
    • Epitaxial Growth of Bi(2201) Phase in Atomic Layer-by-Layer Deposition by Ion Beam Sputtering Method (Special Issue on High-Temperature Superconducting Electronics) (1993)
    • Surface Morphology and Dielectric Properties of Stoichiometric and Off-Stoichiometric SrTiO_3 Thin Films Grown by Molecular Beam Epitaxy (1999)
  • MIGITA Shinji ID: 9000107325843

    MIRAI, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology (AIST) (2005 from CiNii)

    Articles in CiNii:1

    • Study on Oxynitride Buffer Layers in HfO_2 Metal-Insulator-Semiconductor Structures for Improving Metal-Insulator-Semiconductor Field-Effect Transistor Performance (2005)
  • MIGITA Shinji ID: 9000107343642

    MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST) (2005 from CiNii)

    Articles in CiNii:1

    • Silicon-Atom Induced Fermi-Level Pinning of Fully Silicided Platinum Gates on HfO_2 Dielectrics (2005)
  • MIGITA Shinji ID: 9000107375631

    Articles in CiNii:1

    • Development of Silicon Nanowire MOSFETs through Atomic-Scale Design Concepts (2010)
  • MIGITA Shinji ID: 9000257984087

    NeRI AIST (2012 from CiNii)

    Articles in CiNii:1

    • Extremely Scaled Equivalent Oxide Thickness of High-<i>k</i> (<i>k</i>=40) HfO<sub>2</sub> Gate Stacks Prepared by Atomic Layer Deposition and Ti Cap Anneal (2012)
  • MIGITA Shinji ID: 9000403515376

    Articles in CiNii:1

    • Design points of ferroelectric field-effect transistors for memory and logic applications as investigated by metal-ferroelectric-metal-insulator-semiconductor gate stack structures using Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films (2019)
  • Migita Shinji ID: 9000024971163

    Articles in CiNii:1

    • Fabrication of direct-contact higher-k HfO2 gate stacks by oxygen-controlled cap post-deposition annealing (Special issue: Dielectric thin films for future electron devices: science and technology) (2011)
  • Migita Shinji ID: 9000258135009

    Osaka University, Department of Electrical Engineering, Suita, Osaka 565, Japan (1997 from CiNii)

    Articles in CiNii:1

    • Evaluation of Ozone Condensation System by Thermal Decomposition Method. (1997)
  • Migita Shinji ID: 9000258153752

    Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan (2000 from CiNii)

    Articles in CiNii:1

    • Epitaxial Growth of Bi4Ti3O12/CeO2/Ce0.12Zr0.88O2 and Bi4Ti3O12/SrTiO3/Ce0.12Zr0.88O2 Thin Films on Si and Its Application to Metal-Ferroelectric-Insulator-Semiconductor Diodes. (2000)
  • Migita Shinji ID: 9000258158249

    National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan (2001 from CiNii)

    Articles in CiNii:1

    • Fabrication and Electrical Characteristics of a Trench-Type Metal-Ferroelectric-Metal-Insulator-Semiconductor Field Effect Transistor. (2001)
  • Migita Shinji ID: 9000258180248

    MIRAI, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology (AIST) (2005 from CiNii)

    Articles in CiNii:1

    • Study on Oxynitride Buffer Layers in HfO2 Metal-Insulator-Semiconductor Structures for Improving Metal-Insulator-Semiconductor Field-Effect Transistor Performance (2005)
  • Migita Shinji ID: 9000258180588

    MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST) (2005 from CiNii)

    Articles in CiNii:1

    • Silicon-Atom Induced Fermi-Level Pinning of Fully Silicided Platinum Gates on HfO2 Dielectrics (2005)
  • Migita Shinji ID: 9000401565680

    Articles in CiNii:1

    • Impact of Surface Hydrophilicization prior to Atomic Layer Deposition for HfO2/Si Direct-Contact Gate Stacks (2008)
  • Migita Shinji ID: 9000401668392

    Articles in CiNii:1

    • Evaluation of Ozone Condensation System by Thermal Decomposition Method (1997)
  • Migita Shinji ID: 9000401682956

    Articles in CiNii:1

    • Growth Style of Bi4Ti3O12Thin Films on CeO2/Ce0.12Zr0.88O2Buffered Si Substrates (1999)
  • Migita Shinji ID: 9000401685911

    Articles in CiNii:1

    • Surface Morphology and Dielectric Properties of Stoichiometric and Off-Stoichiometric SrTiO3 Thin Films Grown by Molecular Beam Epitaxy (1999)
  • 1 / 4
Page Top