Search Results101-120 of  138

  • Mimura Takashi ID: 9000364582182

    Showa University (2016 from CiNii)

    Articles in CiNii:1

    • ISP-13-1 The usefulness of ultrasonographic evaluation of malignant ovarian tumors by IOTA (International Ovarian Tumor Analysis) study(Group 13 Ovarian Cancer 2,International Session Poster) : (2016)
  • Mimura Takashi ID: 9000364585303

    Showa University (2016 from CiNii)

    Articles in CiNii:1

    • ISP-37-1 Progressive direction of endometriosis evaluated by the density of follicles in the lesions of ovarian endometrioma(Group 37 Women's Health 2,International Session Poster) : (2016)
  • Mimura Takashi ID: 9000391385084

    東芝ライテック (株) (1998 from CiNii)

    Articles in CiNii:1

    • The Measurement of GR by Digital Still Camera for use within Outdoor Sports Lighting (1998)
  • Mimura Takashi ID: 9000391389833

    日本大学理工学部 (1996 from CiNii)

    Articles in CiNii:1

    • Fundamental consideration of GR mesurement by digital still camera (1996)
  • Mimura Takashi ID: 9000391391675

    東芝ライテック株式会社 (1999 from CiNii)

    Articles in CiNii:1

    • Lighting facilities of Toyama municipal gymnasium (Part1) (1999)
  • Mimura Takashi ID: 9000392686234

    Articles in CiNii:1

    • Room-Temperature Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/<I>N</I>-AlGaAs Heterojunction Structures (1981)
  • Mimura Takashi ID: 9000392687947

    Articles in CiNii:1

    • The Effect of Growth Temperature on the Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/<I>N</I>-AlGaAs Heterostructures Grown by MBE (1981)
  • Mimura Takashi ID: 9000392693024

    Articles in CiNii:1

    • The Effect of Annealing on the Electrical Properties of Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE (1981)
  • Mimura Takashi ID: 9000401564050

    Articles in CiNii:1

    • AlGaN/GaN Heterostructure Field-Effect Transistors on 4H-SiC Substrates with Current-Gain Cutoff Frequency of 190 GHz (2008)
  • Mimura Takashi ID: 9000401564920

    Articles in CiNii:1

    • Effects of Si Deposition on AlGaN Barrier Surfaces in GaN Heterostructure Field-Effect Transistors (2008)
  • Mimura Takashi ID: 9000401586955

    Articles in CiNii:1

    • A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions (1980)
  • Mimura Takashi ID: 9000401589259

    Articles in CiNii:1

    • Extremely High Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE (1981)
  • Mimura Takashi ID: 9000401589323

    Articles in CiNii:1

    • Enhancement-Mode High Electron Mobility Transistors for Logic Applications (1981)
  • Mimura Takashi ID: 9000401589395

    Articles in CiNii:1

    • Room-Temperature Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures (1981)
  • Mimura Takashi ID: 9000401589488

    Articles in CiNii:1

    • The Effect of Growth Temperature on the Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE (1981)
  • Mimura Takashi ID: 9000401589611

    Articles in CiNii:1

    • High Electron Mobility Transistor Logic (1981)
  • Mimura Takashi ID: 9000401589831

    Articles in CiNii:1

    • The Effect of Annealing on the Electrical Properties of Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE (1981)
  • Mimura Takashi ID: 9000401589870

    Articles in CiNii:1

    • Selective Dry Etching of AlGaAs-GaAs Heterojunction (1981)
  • Mimura Takashi ID: 9000401695093

    Articles in CiNii:1

    • DC and RF Performance of 50 nm Gate Pseudomorphic In0.7Ga0.3As/In0.52Al0.48As High Electron Mobility Transistors Grown on (411)A-Oriented InP Substrates by Molecular-Beam Epitaxy (2000)
  • Mimura Takashi ID: 9000401695264

    Articles in CiNii:1

    • High fT 50-nm-Gate InAlAs/InGaAs High Electron Mobility Transistors Lattice-Matched to InP Substrates (2000)
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