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  • MINAMI Satoe ID: 9000002536137

    Research institute of Electronics, Shizuoka University (2000 from CiNii)

    Articles in CiNii:4

    • Formation Mechanism of In_xGa_1-xAs Bridge Layers on Patterned GaAs Substrates with Trenches (2000)
    • EPitaxial Lateral overgrowth of InGaAS on patterned GaAs substrates by Liquid Phase EPitaxy (1997)
    • Epitaxial lateral overgrowth of InGaAs on patterned GaAs substrates by Liquid Phase Epitaxy (II) (1997)
  • MINAMI Satoe ID: 9000004954515

    ULSI Process Technology Development Center Semikonductor Company, Matsushita Electronics (1999 from CiNii)

    Articles in CiNii:3

    • Development of TCAD framework for Process Optimization (1999)
    • Development of TCAD framework for Process Optimization (1999)
    • Development of TCAD framework for Process Optimization (1999)
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