Search Results1-7 of  7

  • MINATO Tadaharu ID: 9000001672115

    Articles in CiNii:7

    • Direct Beam Lead Bonding for Trench MOSFET & CSTBT (2005)
    • Correlation between Physical Analysis and Electrical characteristics of Carrier Lifetime Controlled IGBTs (2011)
    • Correlation between Physical Analysis and Electrical characteristics of Carrier Lifetime Controlled IGBTs (2011)
  • MINATO Tadaharu ID: 9000001922899

    Mitsubishi Electric Corporation (2003 from CiNii)

    Articles in CiNii:1

    • Well-tempered combination of ultra-high voltage IGBT and Diode rated 6.5kV (2003)
  • Minato Tadaharu ID: 9000243882933

    Power Semiconductor Device Development Dept., Power Device Works, Mitsubishi Electric Co. (2014 from CiNii)

    Articles in CiNii:1

    • Future trend of Si power device (2014)
  • Minato Tadaharu ID: 9000254133289

    Department of Physics, Faculty of Sciences, Kwansei-Gakuin University (1983 from CiNii)

    Articles in CiNii:1

    • On the Order of the Trigonal-Monoclinic Transition in Sodium Azide (NaN<SUB>3</SUB>) Crystal (1983)
  • Minato Tadaharu ID: 9000345218619

    Mitsubisi Electric Corporation (2017 from CiNii)

    Articles in CiNii:1

    • Latest Technology in Silicon IGBT (2017)
  • Minato Tadaharu ID: 9000401850144

    Department of Physics, Faculty of Sciences, Kwansei-Gakuin University (1983 from CiNii)

    Articles in CiNii:1

    • On the Order of the Trigonal-Monoclinic Transition in Sodium Azide (NaN3) Crystal (1983)
  • Minato Tadaharu ID: 9000402058451

    Articles in CiNii:1

    • Time-Resolved X-Ray Diffractometry and Domain Switching in NaNO2 (1985)
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