Search Results1-20 of  65

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  • Miura-Mattausch Mitiko ID: 9000025031353

    Articles in CiNii:1

    • Modeling of subthreshold swing and analysis of short-channel effects in double-gate metal oxide semiconductor field-effect transistors (Special issue: Solid state devices and materials) (2009)
  • Miura-Mattausch Mitiko ID: 9000025069598

    Articles in CiNii:1

    • Dynamic-Carrier-Distribution-Based Compact Modeling of p–i–n Diode Reverse Recovery Effects (Special Issue : Solid State Devices and Materials (1)) (2012)
  • Miura-Mattausch Mitiko ID: 9000241498204

    Articles in CiNii:1

    • Compact Modeling of Floating-Base Effect in Injection-Enhanced Insulated-Gate Bipolar Transistor Based on Potential Modification by Accumulated Charge (Special Issue : Solid State Devices and Materials) (2013)
  • MIURA (MATTAUSCH) Mitiko ID: 9000107388802

    Graduate School of Advanced Sciences of Matter, Hiroshima University (2004 from CiNii)

    Articles in CiNii:1

    • Complete Surface-Potential-Based Fully-Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model for Circuit Simulation (2004)
  • MIURA MATTAUSCH Mitiko ID: 9000001497210

    Graduate School of Advanced Sciences of Matter, Hiroshima University (2005 from CiNii)

    Articles in CiNii:1

    • Carrier Transport Model for Lateral p-i-n Photodiode in High-Frequency Operation (2005)
  • MIURA MATTAUSCH Mitiko ID: 9000002174549

    Graduate School of Advanced Sciences of Matter, Hiroshima University (2006 from CiNii)

    Articles in CiNii:1

    • Suppressed short-channel effect of DG-MOSFET and its modeling (2006)
  • MIURA MATTAUSCH Mitiko ID: 9000002176976

    HiSIM Research Center, Hiroshima University (2007 from CiNii)

    Articles in CiNii:1

    • Modeling of Floating-Body Effect in SOI-MOSFET with Complete Surface-Potential Description (2007)
  • MIURA MATTAUSCH Mitiko ID: 9000004838838

    Hiroshima-University (2011 from CiNii)

    Articles in CiNii:13

    • MOSFET Harmonic Distortion up to the Cutoff Frequency : Measurement and Theoretical Analysis (2005)
    • A Gate-Current Model for Advanced MOSFET Technologies Implemented into HiSIM2 (2008)
    • Non-Quasi-Static Carrier Dynamics of MOSFETs under Low-Voltage Operation (2009)
  • MIURA MATTAUSCH Mitiko ID: 9000006577904

    HiSIM Research Center, Hiroshima University:Graduate School of Advanced Sciences of Matter, Hiroshima University (2009 from CiNii)

    Articles in CiNii:5

    • Modeling of Floating-Body Effect in SOI-MOSFET with Complete Surface-Potential Description (2007)
    • Modeling of Floating-Body Effect in SOI-MOSFET with Complete Surface-Potential Description (2007)
    • Progress of compact model for CMOS circuit design : Performance of HiSIM model based on the surface potential model (2008)
  • MIURA-MATTAUSCH Mitiko ID: 1000070709045

    Graduate School of Advanced Sciences of Matter, Hiroshima University (2010 from CiNii)

    Articles in CiNii:16

    • Device model and its applications for circuit simulation (2002)
    • Test circuits for verifying MOSFET models(1) : Subthreshold region (2000)
    • Test circuits for verifying MOSFET models(2) : Amplification of small input-voltage changes (2000)
  • MIURA-MATTAUSCH Mitiko ID: 9000000522104

    Siemens AG, Corporate Research and Development (1992 from CiNii)

    Articles in CiNii:1

    • Unified MOSFT Model for All Channel Lengths down to Quarter Micron (1992)
  • MIURA-MATTAUSCH Mitiko ID: 9000004812976

    Department of Electrical Engineering, Hiroshima University (2003 from CiNii)

    Articles in CiNii:1

    • FOREWORD (2003)
  • MIURA-MATTAUSCH Mitiko ID: 9000004875004

    Guest Editor (1999 from CiNii)

    Articles in CiNii:1

    • Special Issue on TCAD for Semiconductor Industries (1999)
  • MIURA-MATTAUSCH Mitiko ID: 9000004875178

    the Department of Electrical Engineering, Hiroshima University (1999 from CiNii)

    Articles in CiNii:1

    • Worst/Best Device and Circuit Performances for MOSFETs Determined from Process Fluctuations (1999)
  • MIURA-MATTAUSCH Mitiko ID: 9000004897511

    Faculty of Engineering, Hiroshima University (2000 from CiNii)

    Articles in CiNii:1

    • Capability of CMOS Device Simulation (2000)
  • MIURA-MATTAUSCH Mitiko ID: 9000015605765

    Graduate School of Advanced Sciences of Matter, Hiroshima University (2003 from CiNii)

    Articles in CiNii:1

    • High-Electric-Field Electron Transport at Silicon/Silicon-Dioxide Interface Inversion Layer (2003)
  • MIURA-MATTAUSCH Mitiko ID: 9000015712798

    Graduate School of Advanced Sciences of Matter, Hiroshima University (2003 from CiNii)

    Articles in CiNii:1

    • 100 nm-MOSFET Model for Circuit Simulation : Challenges and Solutions (2003)
  • MIURA-MATTAUSCH Mitiko ID: 9000017683652

    Hiroshima University (2008 from CiNii)

    Articles in CiNii:1

    • Compact Double-Gate Metal-Oxide-Semiconductor Field Effect Transistor Model for Device/Circuit Optimization (2008)
  • MIURA-MATTAUSCH Mitiko ID: 9000107306372

    Graduate School of Advanced Science of Matter, Hiroshima University (2003 from CiNii)

    Articles in CiNii:1

    • A Self-Consistent Non-Quasi-Static MOSFET Model for Circuit Simulation Based on Transient Carrier Response (2003)
  • MIURA-MATTAUSCH Mitiko ID: 9000248234124

    Hiroshima University (2012 from CiNii)

    Articles in CiNii:1

    • Compact Modeling of Expansion Effects in LDMOS (2012)
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