Search Results1-20 of  32

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  • Miura Naruhisa ID: 9000025030924

    Articles in CiNii:1

    • 4H-SiC power metal-oxide-semiconductor field effect transistors and Schottky barrier diodes of 1.7kV rating (Special issue: Solid state devices and materials) (2009)
  • Miura Naruhisa ID: 9000241498225

    Articles in CiNii:1

    • Investigation of Cell Structure and Doping for Low-On-Resistance SiC Metal-Oxide-Semiconductor Field-Effect Transistors with Blocking Voltage of 3300V (Special Issue : Solid State Devices and Materials) (2013)
  • MIURA Naruhisa ID: 9000004745007

    Advanced Technology R&D Center, Mitsubishi Electric Corporation (2011 from CiNii)

    Articles in CiNii:13

    • Annealed Ni/Pt/Au metal system as Schottky contacts on n-GaN and AlGaN/GaN (2003)
    • Zn Ion Implantation along the c Axis for Formation of Highly Resistive GaN Layers (2004)
    • Development of SiC power devices (2007)
  • MIURA Naruhisa ID: 9000107334233

    Advanced Technology R&D Center, Mitsubishi Electric Corporation (2001 from CiNii)

    Articles in CiNii:1

    • A Dual-Gate Complementary Metal-Oxide-Semiconductor Technology with Novel Self-Aligned Pocket Implantation which Takes Advantage of Elevated Source/Drain Configurations (2001)
  • MIURA Naruhisa ID: 9000107389474

    Advanced Technology R&D Center, Mitsubishi Electric Corporation (2004 from CiNii)

    Articles in CiNii:1

    • Improvement of DC and RF Characteristics of AlGaN/GaN High Electron Mobility Transistors by Thermally Annealed Ni/Pt/Au Schottky Gate (2004)
  • MIURA Naruhisa ID: 9000256362032

    五洋建設株式会社 (2007 from CiNii)

    Articles in CiNii:1

    • Sloshing Analysis in a Circular Tank using a Depth Averaged Flow model in Generalized Curvilinear Moving Coordinate System (2007)
  • MIURA Naruhisa ID: 9000256363177

    京都大学大学院工学研究科都市社会工学専攻修士課程 (2005 from CiNii)

    Articles in CiNii:1

    • Sloshing Analysis in a Cylindrical Tank using the Depth Averaged Flow Model in Generalized Curvilinear Moving Coordinate System (2005)
  • Miura Naruhisa ID: 9000258130392

    Tokyo Institute of Technology, 2–12–1 O–okayama, Meguro–ku, Tokyo 152, Japan (1996 from CiNii)

    Articles in CiNii:1

    • Surface Modification of Niobium (Nb) by Atomic Force Microscope (AFM) Nano-Oxidation Process. (1996)
  • Miura Naruhisa ID: 9000258135783

    Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2–12–1 O–okayama, Meguro–ku, Tokyo 152, Japan (1997 from CiNii)

    Articles in CiNii:1

    • Anomalous Electrical Characteristics of Epitaxial InN Films Having a High Electron Concentration at Very Low Temperature. (1997)
  • Miura Naruhisa ID: 9000258137883

    Tokyo Institute of Technology, 2–12–1 O–okayama, Meguro–ku, Tokyo 152, Japan (1997 from CiNii)

    Articles in CiNii:1

    • Nb/Nb Oxide-Based Planar-Type Metal/Insulator/Metal (MIM) Diodes Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process. (1997)
  • Miura Naruhisa ID: 9000258138262

    Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2–12–1 O–okayama, Meguro–ku, Tokyo 152, Japa (1997 from CiNii)

    Articles in CiNii:1

    • Fabrication of Sub-Micron Tungsten Carbide (WCx)/Amorphous Carbon (a-C) Stacked Junction By Beam-Induced Reaction Processes. (1997)
  • Miura Naruhisa ID: 9000258138286

    Tokyo Institute of Technology, 2–12–1 O–okayama, Meguro–ku, Tokyo 152, Japan (1997 from CiNii)

    Articles in CiNii:1

    • Single-Electron Transistors (SETs) with Nb/Nb Oxide System Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process. (1997)
  • Miura Naruhisa ID: 9000258140821

    Tokyo Institute of Technology, 2–12–1 O–okayama, Meguro–ku, Tokyo 152, Japan (1998 from CiNii)

    Articles in CiNii:1

    • Room Temperature Nb-Based Single-Electron Transistors. (1998)
  • Miura Naruhisa ID: 9000258150134

    Advanced Technology R&D Center, Mitsubishi Electric Corporation, 4-1, Mizuhara, Itami, Hyogo 664-8641, Japan (2000 from CiNii)

    Articles in CiNii:1

    • Parasitic Resistance Reduction in Deep Submicron Dual-Gate Transistors with Partially Elevated Source/Drain Extension Regions Fabricated by Complementary Metal-Oxide-Semiconductor Technologies. (2000)
  • Miura Naruhisa ID: 9000401660434

    Articles in CiNii:1

    • Application of Carbonaceous Material for Fabrication of Nano-Wires with a Scanning Electron Microscopy (1996)
  • Miura Naruhisa ID: 9000401660976

    Articles in CiNii:1

    • Surface Modification of Niobium (Nb) by Atomic Force Microscope (AFM) Nano-Oxidation Process (1996)
  • Miura Naruhisa ID: 9000401668624

    Articles in CiNii:1

    • Nb/Nb Oxide-Based Planar-Type Metal/Insulator/Metal (MIM) Diodes Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process (1997)
  • Miura Naruhisa ID: 9000401668803

    Articles in CiNii:1

    • Single-Electron Transistors (SETs) with Nb/Nb Oxide System Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process (1997)
  • Miura Naruhisa ID: 9000401668824

    Articles in CiNii:1

    • Fabrication of Sub-Micron Tungsten Carbide (WCx)/Amorphous Carbon (a-C) Stacked Junction By Beam-Induced Reaction Processes (1997)
  • Miura Naruhisa ID: 9000401669305

    Articles in CiNii:1

    • Single-Electron Tunneling through Amorphous Carbon Dots Array (1997)
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