Search Results1-9 of  9

  • MIYAGAWA Reina ID: 9000014580932

    Nagoya Institute of Technology (2014 from CiNii)

    Articles in CiNii:14

    • Control of interlayer on MOVPE growth of AlN on sapphire substrate (2011)
    • Control of interlayer on MOVPE growth of AlN on sapphire substrate (2011)
    • a-plane GaN grown on r-plane sapphire by MOVPE (2009)
  • MIYAGAWA Reina ID: 9000019052609

    Department of Electrical and Electronic Engineering, Mie University (2012 from CiNii)

    Articles in CiNii:1

    • Microstructure of AlN Grown on a Nucleation Layer on a Sapphire Substrate (2012)
  • MIYAGAWA Reina ID: 9000107350623

    Department of Electrical and Electronic Engineering, Graduate School of Engineering, Mie University (2011 from CiNii)

    Articles in CiNii:1

    • Raman Scattering Spectroscopy of Residual Stresses in Epitaxial AlN Films (2011)
  • Miyagawa Reina ID: 9000070282162

    Articles in CiNii:1

    • Effects of the AlN Interlayer on the Distribution and Mobility of Two-Dimensional Electron Gas in AlGaN/AlN/GaN Heterojunctions (2010)
  • Miyagawa Reina ID: 9000324998749

    Nagoya Institute of Technology (2016 from CiNii)

    Articles in CiNii:1

    • Selective growth of GaN on SiC substrates with femtosecond-laser-induced periodic nanostructures (2016)
  • Miyagawa Reina ID: 9000402030344

    Articles in CiNii:1

    • Surface characterization of 6H-SiC substrate irradiated by femtosecond laser (2015)
  • Miyagawa Reina ID: 9000402033272

    Articles in CiNii:1

    • Surface thermal stability of free-standing GaN substrates (2015)
  • Miyagawa Reina ID: 9000402238146

    Articles in CiNii:1

    • Formation of femtosecond laser-induced periodic nanostructures on GaN (2019)
  • Reina Miyagawa ID: 9000411964376

    Articles in CiNii:1

    • Characterization of femtosecond-laser-induced periodic structures on SiC substrates (2018)
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