Search Results1-13 of  13

  • MIYASHITA Miyo ID: 9000004746771

    Mitsubishi Electric Corporation (2014 from CiNii)

    Articles in CiNii:39

    • A 0/20-dB Step Attenuator Using GaAs-HBT Compatible, AC-Coupled, Stack-Type Base-Collector Diode Switches (2007)
    • Compact Multi-Chip-Modules for 10Gbps Lightwave Transceivers (1997)
    • 10Gbps EA/LD駆動用IC"ML0XX18シリーズ" (特集 光・高周波デバイス) (2004)
  • MIYASHITA Miyo ID: 9000004816319

    the High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation (1998 from CiNii)

    Articles in CiNii:1

    • A New Broadband Buffer Circuit Technique and Its Application to a 10-Gbit/s Decision Circuit Using Production-Level 0.5 μm GaAs MESFETs (1998)
  • MIYASHITA Miyo ID: 9000005561100

    Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corporation (1994 from CiNii)

    Articles in CiNii:1

    • Long-Wavelength Receiver Optoelectronic Integrated Circuit on 3-Inch-Diameter GaAs Substrate Grown by InP-on-GaAs Heteroepitaxy (1994)
  • MIYASHITA Miyo ID: 9000016495592

    High Frequency and Optical Device Works, Mitsubishi Electric Corporation (2007 from CiNii)

    Articles in CiNii:1

    • 3.5-GHz-Band Low-Bias-Current Operation 0/20-dB Step Linearized Attenuators Using GaAs-HBT Compatible, AC-Coupled, Stack Type Base-Collector Diode Switch Topology (2007)
  • MIYASHITA Miyo ID: 9000297482923

    Mitsubishi Electric Corporation (2015 from CiNii)

    Articles in CiNii:1

    • A 3.5-GHz-Band GaAs HBT Stage-Bypass-Type Step-Gain Amplifier Using Base-Collector Diode Switches and Its Application to a WiMAX HBT MMIC Power Amplifier Module (2015)
  • MIYASHITA Miyo ID: 9000303996211

    Mitsubishi Electric Corporation (2015 from CiNii)

    Articles in CiNii:1

    • 0.8-/1.5-GHz-Band WCDMA HBT MMIC Power Amplifiers with an Analog Bias Control Scheme (2015)
  • MIYASHITA Miyo ID: 9000311504804

    Mitsubishi Electric Corporation (2015 from CiNii)

    Articles in CiNii:1

    • A Current-Mirror-Based GaAs-HBT RF Power Detector Suitable for Base Terminal Monitoring in an HBT Power Stage (2015)
  • MIYASHITA Miyo ID: 9000326651507

    Mitsubishi Electric Corporation (2016 from CiNii)

    Articles in CiNii:1

    • Design and Measurements of Building Blocks Supporting a 1.9-GHz-Band BiFET MMIC Power Amplifier for WCDMA Handsets (2016)
  • MIYASHITA Miyo ID: 9000353367196

    Mitsubishi Electric Corporation (2017 from CiNii)

    Articles in CiNii:1

    • Experimental Study on CDMA GaAs HBT MMIC Power Amplifier Layout Design for Reducing Turn-On Delay in Transient Response (2017)
  • MIYASHITA Miyo ID: 9000378127747

    Mitsubishi Electric Corporation (2018 from CiNii)

    Articles in CiNii:1

    • Design and Measurements of Two-Gain-Mode GaAs-BiFET MMIC Power Amplifier Modules with Small Phase Discontinuity for WCDMA Data Communications (2018)
  • Miyashita Miyo ID: 9000242904036

    Mitsubishi Electric Corporation (2013 from CiNii)

    Articles in CiNii:1

    • C-2-43 A High Power CMOS Cascode Transistor with distributed gate capacitance for ground (2013)
  • Miyashita Miyo ID: 9000258122147

    Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corporation, 4–1 Mizuhara, Itami 664 (1994 from CiNii)

    Articles in CiNii:1

    • Long-Wavelength Receiver Optoelectronic Integrated Circuit on 3-Inch-Diameter GaAs Substrate Grown by InP-on-GaAs Heteroepitaxy. (1994)
  • Miyashita Miyo ID: 9000401641216

    Articles in CiNii:1

    • Long-Wavelength Receiver Optoelectronic Integrated Circuit on 3-Inch-Diameter GaAs Substrate Grown by InP-on-GaAs Heteroepitaxy (1994)
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