Search Results1-20 of  275

  • Miyazaki Seiichi ID: 9000017564211

    Articles in CiNii:1

    • Selected topics in Applied physics: Technology evolution for silicon nano-electronics (2011)
  • Miyazaki Seiichi ID: 9000024979578

    Articles in CiNii:1

    • Activation of As atoms in ultrashallow junction during milli- and microsecond annealing induced by thermal-plasma-jet irradiation (Special issue: Solid state devices and materials) (2011)
  • Miyazaki Seiichi ID: 9000403858182

    Articles in CiNii:1

    • Temperature Dependence of Electron Tunneling between Two Dimensional Electron Gas and Si Quantum Dots (2010)
  • MIYAZAKI Khairurrijal Seiichi ID: 9000005675994

    Articles in CiNii:1

    • Quasibound States of Electric Field-Induced Quantum Wells in Silicon Subsurfaces (1997)
  • MIYAZAKI S. ID: 9000004781718

    Graduate School of Advanced Sciences of Matter, Hiroshima University (2009 from CiNii)

    Articles in CiNii:52

    • Charge Injection Characteristics of a Si Quantum Dot Floationg Gate in MOS Structures (2001)
    • Electron Charging to Silicon Quantum Dots as a Floating Gate in MOS Capacitors (1997)
    • Quantum Confinement Effect in Self-Assembled, Nanometer Silicon Dots (1998)
  • MIYAZAKI SEIICHI ID: 9000254679925

    Articles in CiNii:1

    • Structures of reaction products from 1-hydrazinophthalazine and some carbonyls. (1976)
  • MIYAZAKI Seiichi ID: 9000001620450

    Graduate School of Engineering, Nagoya University (2012 from CiNii)

    Articles in CiNii:29

    • Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation(Si Devices and Processes, <Special Section>Fundamental and Application of Advanced Semiconductor Devices) (2005)
    • Characterization of Atom Diffusion in Polycrystalline Si/SiGe/Si Stacked Gate(Si Devices and Processes, <Special Section>Fundamental and Application of Advanced Semiconductor Devices) (2005)
    • Characterization of Germanium Nanocrystallites Grown on SiO_2 by a Conductive AFM Probe Technique(Nanomaterials and Quantum-Effect Devices, <Special Section>Fundamental and Application of Advanced Semiconductor Devices) (2005)
  • MIYAZAKI Seiichi ID: 9000001716441

    Department of Electrical Engineering, Hiroshima University (1997 from CiNii)

    Articles in CiNii:1

    • Phosphorous Incorporation in Ultrathin Gate Oxides and Its Impact to the Network Structure (1997)
  • MIYAZAKI Seiichi ID: 9000002165043

    Department of Electrical Engineering, Hiroshima University (1999 from CiNii)

    Articles in CiNii:1

    • Determination of Bandgap and Energy Band Alignment for High-Dielectric-Constant Gate Insulators Using High-Resolution X-ray Photoelectron Spectroscopy (1999)
  • MIYAZAKI Seiichi ID: 9000004781655

    Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima University:(Present office)Hitachi Ltd. (2002 from CiNii)

    Articles in CiNii:4

    • Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique (1999)
    • Experimental Evidence of Carrier Depletion Effect near n^+Poly-Si Gate Side Wall/SiO_2 Interfaces for Sub-100nm nMOSFETs (2001)
    • Experimental Evidence of Carrier Depletion Effect near n^+Poly-Si Gate Side Wall/SiO_2 Interfaces for Sub-100nm nMOSFETs (2001)
  • MIYAZAKI Seiichi ID: 9000004839897

    Hiroshima University (2004 from CiNii)

    Articles in CiNii:1

    • Special Section on High-k Gate Dielectrics (2004)
  • MIYAZAKI Seiichi ID: 9000005915047

    Articles in CiNii:1

    • Improved Performance of Amorphous Silicon Photoreceptor by Using a Thick Surface Layer with a Graded-Band-Gap Structure (2001)
  • MIYAZAKI Seiichi ID: 9000006486752

    Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima University (2002 from CiNii)

    Articles in CiNii:1

    • Improved Performance of Amorphous Silicon Photoreceptor by Using a Thick Surface Layer with a Graded-Band-Gap Structure (2002)
  • MIYAZAKI Seiichi ID: 9000018771518

    Kanto Fire Protection System Industry Ltd. (2011 from CiNii)

    Articles in CiNii:2

    • Development of Electrical Stimulation System for Improvement of Mushroom Yield (2011)
    • Development of Electrical Stimulation System for Improvement of Mushroom Yield (2011)
  • MIYAZAKI Seiichi ID: 9000020182539

    広島大学工学部 (1991 from CiNii)

    Articles in CiNii:1

    • Native Oxide Formation on Silicon Wafer. (1991)
  • MIYAZAKI Seiichi ID: 9000020323156

    Department of Electrical Engineering, Hiroshima University (1989 from CiNii)

    Articles in CiNii:1

    • Cryogenic growth of polysilane. (1989)
  • MIYAZAKI Seiichi ID: 9000020676150

    Articles in CiNii:1

    • Recent Plasma Processing Technology. Control of Surface Reaction in Plasma Enhanced CVD. (1994)
  • MIYAZAKI Seiichi ID: 9000021652297

    Graduate School of Engineering, Nagoya University (2012 from CiNii)

    Articles in CiNii:1

    • Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering (2012)
  • MIYAZAKI Seiichi ID: 9000107322816

    Graduate School of AdSM, Hiroshima University (2008 from CiNii)

    Articles in CiNii:1

    • XPS Study of TiAlN/HfSiON Gate Stack : Reduction of Effective Work Function Change Induced by Al Diffusion (2008)
  • MIYAZAKI Seiichi ID: 9000107323028

    Grad. School of AdSM, Hiroshima Univ. (2008 from CiNii)

    Articles in CiNii:1

    • Backside X-ray Photoelectron Spectroscopy of Ru/HfSiON Gate Stack : Origin of Charge in Effective Work Function of Ru (2008)
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