Search Results41-54 of  54

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  • Morikawa Yoshitada ID: 9000347100142

    大阪大学 (2012 from CiNii)

    Articles in CiNii:1

    • First-principles thermodynamics study on catalysis and catalytic reactions (2012)
  • Morikawa Yoshitada ID: 9000376935367

    Osaka Univ. (2016 from CiNii)

    Articles in CiNii:1

    • First principles analysis of naphthalene on graphene at high coverage (2016)
  • Morikawa Yoshitada ID: 9000388516202

    Osaka University (2018 from CiNii)

    Articles in CiNii:15

    • Electronic Structure, Magnetism and Ionic Transport Properties of Sr<sub>3</sub>Fe<sub>2</sub>O<sub>7-δ</sub> , based on First Principles Calculation (2017)
    • Theoretical analysis of CO poisoning tolerance of Pt clusters supported on graphene lattice vacancies (2017)
    • First-principles analysis of Catalyst-referred etching of GaN surface with Pt catalyst:Reactions at kink site on Ga surface (2018)
  • Morikawa Yoshitada ID: 9000398794150

    Department of Precision Science and Technology, Graduate School of Engineering, Osaka University (2018 from CiNii)

    Articles in CiNii:1

    • Characteristics and Mechanism of Catalyst-Referred Etching Method: Application to 4H-SiC (2018)
  • Morikawa Yoshitada ID: 9000401567735

    Articles in CiNii:1

    • Origin of Surface-Band Dispersion at the Pentacene/Cu Interface (2010)
  • Morikawa Yoshitada ID: 9000401901518

    CREST, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012 (2008 from CiNii)

    Articles in CiNii:1

    • Electrode Dynamics from First Principles (2008)
  • Morikawa Yoshitada ID: 9000401975541

    Research Center for Ultra-Precision Science and Technology, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan (2018 from CiNii)

    Articles in CiNii:1

    • Computational Study on Atomic Structures, Electronic Properties, and Chemical Reactions at Surfaces and Interfaces and in Biomaterials (2018)
  • Morikawa Yoshitada ID: 9000401976294

    Research Center for Ultra-Precision Science and Technology, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan (2018 from CiNii)

    Articles in CiNii:1

    • Effects of Surface Termination and Layer Thickness on Electronic Structures of LaNiO3 Thin Films (2018)
  • Morikawa Yoshitada ID: 9000401991932

    Articles in CiNii:1

    • Mechanism for enhanced single-crystal GaN growth in the C-assisted Na-flux method (2015)
  • Morikawa Yoshitada ID: 9000402016370

    Articles in CiNii:1

    • 2013-08-01 (2013)
  • Morikawa Yoshitada ID: 9000402023450

    Articles in CiNii:1

    • Theoretical investigation of the band structure of picene single crystals within theGWapproximation (2014)
  • Morikawa Yoshitada ID: 9000402046265

    Articles in CiNii:1

    • First-principles study of ZnSnAs2-based dilute magnetic semiconductors (2018)
  • Morikawa Yoshitada ID: 9000402048692

    Articles in CiNii:1

    • Platinum-catalyzed hydrolysis etching of SiC in water: A density functional theory study (2018)
  • Morikawa Yoshitada ID: 9000402052182

    Articles in CiNii:1

    • First-principles study of polar, nonpolar, and semipolar GaN surfaces during oxide vapor phase epitaxy growth (2018)
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