Search Results1-20 of  25

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  • MORIOKA Ayuka ID: 9000001496491

    System Devices Research Laboratories, NEC Corporation (2005 from CiNii)

    Articles in CiNii:6

    • High-Mobility Dual Metal Gate MOS Transistors with High-k Gate Dielectrics (2005)
    • Fully Silicided NiSi Gates on HfSiON Gate Dielectrics for Low Power Application (2004)
    • High Mobility Dual Metal Gate MOS Transistors with High-k Gate Dielectrics (2004)
  • MORIOKA Ayuka ID: 9000004964698

    NEC Corporation (2014 from CiNii)

    Articles in CiNii:9

    • Poly-Si/HfSiO/SiO_2ゲート構造を用いた低電力、高速HfSiOゲート CMOS FET (2004)
    • Suppression of lateral charge redistribution using advanced impurity trap memory for improving high temperature retention (2007)
    • Investigation of stand-by power free electric system using non-volatile CPU (2012)
  • MORIOKA Ayuka ID: 9000107307986

    Articles in CiNii:1

    • Low-Temperature and Low-Activation-Energy Process for the Gate Oxidation of Si Substrates (2000)
  • MORIOKA Ayuka ID: 9000107344104

    System Devices Research Laboratories, NEC Corporation (2005 from CiNii)

    Articles in CiNii:1

    • 1.2nm HfSiON/SiON Stacked Gate Insulators for 65-nm-Node MISFETs (2005)
  • MORIOKA Ayuka ID: 9000107344132

    System Devices Research Laboratories, NEC Corporation (2005 from CiNii)

    Articles in CiNii:1

    • Breakdown Mechanisms and Lifetime Prediction for 90-nm-Node Low-Power HfSiON/SiO_2 CMOSFETs (2005)
  • MORIOKA Ayuka ID: 9000107344256

    System Devices Research Laboratories, NEC Corporation (2005 from CiNii)

    Articles in CiNii:1

    • Fully Silicided NiSi Gate Electrodes on HfSiON Gate Dielectrics for Low-Power Applications (2005)
  • MORIOKA Ayuka ID: 9000107344266

    System Devices Research Laboratories, NEC Corporation (2005 from CiNii)

    Articles in CiNii:1

    • Influence of Charge Traps within HfSiON Bulk on Positive and Negative Bias Temperature Instability of HfSiON Gate Stacks (2005)
  • MORIOKA Ayuka ID: 9000304970543

    Green Platform Research Laboratories, NEC Corporation (2014 from CiNii)

    Articles in CiNii:1

    • A 90-nm Three-terminal MRAM Embedded Nonvolatile Microcontroller for Standby-Power-Critical Applications (2014)
  • Morioka Ayuka ID: 9000258151584

    Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan (2000 from CiNii)

    Articles in CiNii:1

    • Low-Temperature and Low-Activation-Energy Process for the Gate Oxidation of Si Substrates. (2000)
  • Morioka Ayuka ID: 9000258180501

    System Devices Research Laboratories, NEC Corporation (2005 from CiNii)

    Articles in CiNii:1

    • Fully Silicided NiSi Gate Electrodes on HfSiON Gate Dielectrics for Low-Power Applications (2005)
  • Morioka Ayuka ID: 9000258180678

    System Devices Research Laboratories, NEC Corporation (2005 from CiNii)

    Articles in CiNii:1

    • High-Mobility Dual Metal Gate MOS Transistors with High-k Gate Dielectrics (2005)
  • Morioka Ayuka ID: 9000258180943

    System Devices Research Laboratories, NEC Corporation (2005 from CiNii)

    Articles in CiNii:1

    • 1.2nm HfSiON/SiON Stacked Gate Insulators for 65-nm-Node MISFETs (2005)
  • Morioka Ayuka ID: 9000258181103

    System Devices Research Laboratories, NEC Corporation (2005 from CiNii)

    Articles in CiNii:1

    • Influence of Charge Traps within HfSiON Bulk on Positive and Negative Bias Temperature Instability of HfSiON Gate Stacks (2005)
  • Morioka Ayuka ID: 9000258181157

    System Devices Research Laboratories, NEC Corporation (2005 from CiNii)

    Articles in CiNii:1

    • Breakdown Mechanisms and Lifetime Prediction for 90-nm-Node Low-Power HfSiON/SiO2 CMOSFETs (2005)
  • Morioka Ayuka ID: 9000311494784

    Green Platform Research Laboratories, NEC Corporation (2015 from CiNii)

    Articles in CiNii:1

    • C-12-1 Static Timing Analysis (STA) on NanoBridge based programmable logic (2015)
  • Morioka Ayuka ID: 9000311494793

    Green Platform Research Laboratories, NEC Corporation (2015 from CiNii)

    Articles in CiNii:1

    • C-12-2 Evaluation of Temperature Effect on Leakage Current in NanoBridge-based FPGA (2015)
  • Morioka Ayuka ID: 9000401694453

    Articles in CiNii:1

    • Low-Temperature and Low-Activation-Energy Process for the Gate Oxidation of Si Substrates (2000)
  • Morioka Ayuka ID: 9000401735585

    Articles in CiNii:1

    • Fully Silicided NiSi Gate Electrodes on HfSiON Gate Dielectrics for Low-Power Applications (2005)
  • Morioka Ayuka ID: 9000401735591

    Articles in CiNii:1

    • High-Mobility Dual Metal Gate MOS Transistors with High-k Gate Dielectrics (2005)
  • Morioka Ayuka ID: 9000401735765

    Articles in CiNii:1

    • 1.2 nm HfSiON/SiON Stacked Gate Insulators for 65-nm-Node MISFETs (2005)
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