Search Results1-5 of  5

  • MORISHITA Shunsuke ID: 9000000227165

    Department of Physical Electronics, Tokyo Institute of Technology (1996 from CiNii)

    Articles in CiNii:1

    • Low-Temperature Chemical-Vapor-Deposition of Silicon-Nitride Film from Hexachloro-Disilane and Hydrazine (1996)
  • MORISHITA Shunsuke ID: 9000005570266

    Association of Super-Advanced Electronics Technologies (ASET):(Present address)Advanced Technology Research Laboratary, SHARP Corp. (2002 from CiNii)

    Articles in CiNii:3

    • Atomic-Layer Chemical-Vapor-Deposition of SiO_2 by Cyclic Exposures of CH_3OSi(NCO)_3 and H_2O_2 (1995)
    • Plasma-Wall Interactions In Dual Freguency Narrow-Gap Reactive Ion Etching System (1998)
    • CF and CF_2 Radical Densities in 13.56-MHz CHF_3/Ar Inductively Coupled Plasma (2002)
  • Morishita Shunsuke ID: 9000258131661

    Department of Physical Electronics, Tokyo Institute of Technology 2–12–1 O–okayama, Meguro–ku, Tokyo 152, Japan (1996 from CiNii)

    Articles in CiNii:1

    • Low-Temperature Chemical-Vapor-Deposition of Silicon-Nitride Film from Hexachloro-Disilane and Hydrazine. (1996)
  • Morishita Shunsuke ID: 9000401651581

    Articles in CiNii:1

    • Atomic-Layer Chemical-Vapor-Deposition of SiO$_{\bf 2}$ by Cyclic Exposures of CH$_{\bf 3}$OSi(NCO)$_{\bf 3}$ and H$_{\bf 2}$O$_{\bf 2}$ (1995)
  • Morishita Shunsuke ID: 9000401655509

    Articles in CiNii:1

    • Low-Temperature Chemical-Vapor-Deposition of Silicon-Nitride Film from Hexachloro-Disilane and Hydrazine (1996)
Page Top