Search Results1-8 of  8

  • Machida Ryuto ID: 9000018552439

    Articles in CiNii:1

    • Study of initial growth layer of GaSb on Si(111) by scanning tunneling microscopy (Special issue: Scanning probe microscopy) (2011)
  • Machida Ryuto ID: 9000024991451

    Articles in CiNii:1

    • Study of GaSb Layers Grown on Ga/Si(111)-√{3} × √{3} by Scanning Tunneling Microscopy (Special Issue : Scanning Probe Microscopy) (2012)
  • MACHIDA Ryuto ID: 9000251015627

    Articles in CiNii:3

    • Development of Antimonide-Based Transistors (2017)
    • Research and development of electron devices for millimeter- and terahertz-wave wireless communications (2018)
    • Formation of GaSb Islands on Si(111) Substrate Using Ga/Si(111) Surface Reconstructions (2013)
  • Machida Ryuto ID: 9000347100793

    東理大基礎工 (2012 from CiNii)

    Articles in CiNii:1

    • Growth Morphology of GaSb Islands on Ga-induced Si(111) Reconstructed Surface Depending on Growth Temperature (2012)
  • Machida Ryuto ID: 9000401800176

    Articles in CiNii:1

    • Study of Initial Growth Layer of GaSb on Si(111) by Scanning Tunneling Microscopy (2011)
  • Machida Ryuto ID: 9000401808173

    Articles in CiNii:1

    • Study of GaSb Layers Grown on Ga/Si(111)-$\sqrt{3}\times\sqrt{3}$ by Scanning Tunneling Microscopy (2012)
  • Machida Ryuto ID: 9000402001043

    Articles in CiNii:1

    • Study of Initial Growth Layer of GaSb on Si(111) by Scanning Tunneling Microscopy (2011)
  • Machida Ryuto ID: 9000402009032

    Articles in CiNii:1

    • Study of GaSb Layers Grown on Ga/Si(111)-√3×√3 by Scanning Tunneling Microscopy (2012)
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