Search Results1-20 of  32

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  • MAKI Tetsuro ID: 9000001722330

    Department of Electrical Engineering, Faculty of Engineering Science, Osaka University (1995 from CiNii)

    Articles in CiNii:1

    • Cathodo-Electro-Luminescence of Diamond p-i-p Layered Structure (1995)
  • MAKI Tetsuro ID: 9000005546218

    Department of Physical Science, Graduate School of Engineering Science, Osaka University : Core Research for Evolutional Science & Technology(CREST), Japan Science and Technology Corporation (2000 from CiNii)

    Articles in CiNii:15

    • Electrical Properties of Metal-Insulator-Semiconductor (MIS) Interface and MISFETs Employing Hydrogenated Diamond Film Surface (1997)
    • Effect of Surface Treatment on Field Emission Properties of CVD Diamond (1998)
    • Electrical Stabilization of Diamond MIS Interface by Employing BaF_2 Insulator Film and Application to Diamond MISFETs (1998)
  • MAKI Tetsuro ID: 9000006929183

    Articles in CiNii:6

    • Evaluation of surface defects and electrical properties of Josephson junction on bicrystal substrates (2011)
    • Estimation of current vector distribution of polycrystalline solar cell by laser-SQUID microscope (2009)
    • Evaluation of Defects at Grain-boundaries on YBCO/STO Bicrystals (2009)
  • MAKI Tetsuro ID: 9000018664343

    Osaka University (1998 from CiNii)

    Articles in CiNii:5

    • Cathodoluminescence measurement of CVD diamond surface (1998)
    • Diamond thin films - Recent progress in diamond synthesis and electronic applications - (1993)
    • Diamond Thin-Film Growth by Using Xe Assisted Microwave Plasma Chemical Vapor Deposition (1997)
  • MAKI Tetsuro ID: 9000107392615

    Faculty of Engineering Science, Osaka University (1997 from CiNii)

    Articles in CiNii:1

    • Hall Effect Measurement and Band Bending Calculation of Hydrogenated Diamond Film Grown by Chemical Vapor Deposition (1997)
  • MAKI Tetsuro ID: 9000252845422

    Faculty of Engineering Science, Osaka University. (1993 from CiNii)

    Articles in CiNii:1

    • Diamond thin films:Recent progress in diamond synthesis and electronic applications (1993)
  • Maki Tetsuro ID: 9000252982680

    Faculty of Engineering Science, Osaka University (1992 from CiNii)

    Articles in CiNii:1

    • Hydrogenating Effect of Single-Crystal Diamond Surface (1992)
  • Maki Tetsuro ID: 9000252987168

    Department of Electrical Engineering, Faculty of Engineering Science, Osaka University (1993 from CiNii)

    Articles in CiNii:1

    • Selective Growth of Diamond Thin-Film Employing Yttria-Stabilized Zirconia Thin-Film Mask (1993)
  • Maki Tetsuro ID: 9000252988312

    Faculty of Engineering Science, Osaka University (1993 from CiNii)

    Articles in CiNii:1

    • Depth Profile Measurement of Activated Boron-Concentration in Diamond Thin Films Utilizing Schottky Diode <I>C</I>-<I>V</I> Curves (1993)
  • Maki Tetsuro ID: 9000258122864

    Faculty of Engineering Science, Osaka University, 1–1 Machikaneyama–cho, Toyonaka, Osaka 560 (1994 from CiNii)

    Articles in CiNii:1

    • Efficient Field Effect in Heavily Doped Thin-Film Diamond Metal-Insulator-Semiconductor Diode Employing BaTiO3 Insulator Film. (1994)
  • Maki Tetsuro ID: 9000258123123

    Department of Electrical Engineering, Faculty of Engineering Science, Osaka University, 1–3 Machikaneyama, Toyonaka, Osaka 560 (1994 from CiNii)

    Articles in CiNii:1

    • Selective Homoepitaxy of Diamond Thin Films and Investigation of Their Cathodoluminescence. (1994)
  • Maki Tetsuro ID: 9000258127160

    Faculty of Engineering Science, Osaka University, 1–3 Machikaneyama, Toyonaka, Osaka 560, Japan (1995 from CiNii)

    Articles in CiNii:1

    • Fermi Level Pinning in Metal-Insulator-Diamond Structures. (1995)
  • Maki Tetsuro ID: 9000258139587

    Department of Electrical Engineering, Faculty of Engineering Science, Osaka University, 1–3 Machikaneyama, Toyonaka, Osaka 560, Japan (1998 from CiNii)

    Articles in CiNii:1

    • Improved Stability of Metal-Insulator-Diamond Semiconductor Interface by Employing BaF2 Insulator Film. (1998)
  • Maki Tetsuro ID: 9000391525127

    Osaka University (1998 from CiNii)

    Articles in CiNii:1

    • Cathodoluminescence measurement of CVD diamond surface (1998)
  • Maki Tetsuro ID: 9000392730392

    Articles in CiNii:1

    • Hydrogenating Effect of Single-Crystal Diamond Surface (1992)
  • Maki Tetsuro ID: 9000392735670

    Articles in CiNii:1

    • Selective Growth of Diamond Thin-Film Employing Yttria-Stabilized Zirconia Thin-Film Mask (1993)
  • Maki Tetsuro ID: 9000392736712

    Articles in CiNii:1

    • Depth Profile Measurement of Activated Boron-Concentration in Diamond Thin Films Utilizing Schottky Diode <I>C</I>-<I>V</I> Curves (1993)
  • Maki Tetsuro ID: 9000401631388

    Articles in CiNii:1

    • Hydrogenating Effect of Single-Crystal Diamond Surface (1992)
  • Maki Tetsuro ID: 9000401634691

    Articles in CiNii:1

    • Selective Growth of Diamond Thin-Film Employing Yttria-Stabilized Zirconia Thin-Film Mask (1993)
  • Maki Tetsuro ID: 9000401638437

    Articles in CiNii:1

    • Depth Profile Measurement of Activated Boron-Concentration in Diamond Thin Films Utilizing Schottky DiodeC-VCurves (1993)
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