Search Results1-15 of  15

  • MANABE Kenzo ID: 9000001496489

    System Devices Research Laboratories, NEC Corporation (2005 from CiNii)

    Articles in CiNii:3

    • High-Mobility Dual Metal Gate MOS Transistors with High-k Gate Dielectrics (2005)
    • Fully Silicided NiSi Gates on HfSiON Gate Dielectrics for Low Power Application (2004)
    • High Mobility Dual Metal Gate MOS Transistors with High-k Gate Dielectrics (2004)
  • MANABE Kenzo ID: 9000001623133

    NEC Corporation (2008 from CiNii)

    Articles in CiNii:7

    • Fabrication and Electrical Characteristics of HfSiON MOS Transistors with Ni-silicide Gate Electrode by using Phase-Controlled Full-Silicidation (PC-FUSI) Technique (2005)
    • Electronic structure analysis of high-k dielectric films by using TEM-EELS (2005)
    • Practical Vth Control Methods for Ni-FUSI/HfSiON MOSFETs on SOI Substrates (2007)
  • MANABE Kenzo ID: 9000004810560

    System Devices Research Laboratories, NEC Corporation (2005 from CiNii)

    Articles in CiNii:5

    • Suppression of Charges in Al_2O_3 Gate Dielectric and Improvement of MOSFET Performance by Plasma Nitridation (2004)
    • Formation of Nickel Self-Aligned Silicide by Using Cyclic Deposition Method (2005)
    • Formation of Nickel Self-Aligned Silicide by Using Cyclic Deposition Method (2004)
  • MANABE Kenzo ID: 9000005917038

    Silicon Systems Research Laboratories, NEC Corporation (2001 from CiNii)

    Articles in CiNii:1

    • Mechanism of Leakage Current Reduction by Adding WO_3 to Crystallized Ta_2O_5 (2001)
  • MANABE Kenzo ID: 9000107344253

    System Devices Research Laboratories, NEC Corporation (2005 from CiNii)

    Articles in CiNii:1

    • Fully Silicided NiSi Gate Electrodes on HfSiON Gate Dielectrics for Low-Power Applications (2005)
  • MANABE Kenzo ID: 9000107351042

    System Devices Research Laboratories, NEC Corporation (2007 from CiNii)

    Articles in CiNii:1

    • Mechanism of Suppressed Change in Effective Work Functions for Impurity-Doped Fully Silicided NiSi Electrodes on Hf-Based Gate Dielectrics (2007)
  • Manabe Kenzo ID: 9000025014078

    Articles in CiNii:1

    • Mechanism for Fermi Level Pinning at Electrode/Hf-Based Dielectric Interface: Systematic Study of Dependence of Effective Work Functions for Polycrystalline Silicon and Fully Silicided NiSi Electrodes on Hf Density at Interface (2006)
  • Manabe Kenzo ID: 9000025097038

    Articles in CiNii:1

    • Analysis of Origin of Threshold Voltage Change Induced by Impurity in Fully Silicided NiSi/SiO2 Gate Stacks (Special Issue: Solid State Devices & Materials) (2006)
  • Manabe Kenzo ID: 9000258157309

    Silicon Systems Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan (2001 from CiNii)

    Articles in CiNii:1

    • Mechanism of Leakage Current Reduction by Adding WO3 to Crystallized Ta2O5. (2001)
  • Manabe Kenzo ID: 9000258180498

    System Devices Research Laboratories, NEC Corporation (2005 from CiNii)

    Articles in CiNii:1

    • Fully Silicided NiSi Gate Electrodes on HfSiON Gate Dielectrics for Low-Power Applications (2005)
  • Manabe Kenzo ID: 9000258180677

    System Devices Research Laboratories, NEC Corporation (2005 from CiNii)

    Articles in CiNii:1

    • High-Mobility Dual Metal Gate MOS Transistors with High-k Gate Dielectrics (2005)
  • Manabe Kenzo ID: 9000283809364

    NEC Corporation (2006 from CiNii)

    Articles in CiNii:1

    • Fully Silicided NiSi Metal Gate Electrodes on HfSiON and SiO<sub>2</sub> Gate Dielectrics (2006)
  • Manabe Kenzo ID: 9000401703869

    Articles in CiNii:1

    • Mechanism of Leakage Current Reduction by Adding WO3 to Crystallized Ta2O5 (2001)
  • Manabe Kenzo ID: 9000401735582

    Articles in CiNii:1

    • Fully Silicided NiSi Gate Electrodes on HfSiON Gate Dielectrics for Low-Power Applications (2005)
  • Manabe Kenzo ID: 9000401735590

    Articles in CiNii:1

    • High-Mobility Dual Metal Gate MOS Transistors with High-k Gate Dielectrics (2005)
Page Top