Search Results1-20 of  83

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  • MASHITA Masaki ID: 9000005551031

    Faculty of Science and Technology, Hirosaki University (2003 from CiNii)

    Articles in CiNii:4

    • Structure, Chemical Bonding and These THermal Stabilities of Diamond-Like Carbon(DLC) Films by RF Magnetron Sputtering (2003)
    • Photoluminescence from Ultrathin InAs/GaAs Single Quantum Wells Grown on GaAs(111)A Substrates (2003)
    • Metalorganic Chemical Vapor Deposition of AlGaAs Using Tertiarybuthylarsine (1995)
  • MASHITA Masao ID: 1000030292139

    Faculty of Science and Technology, Hirosaki University (2003 from CiNii)

    Articles in CiNii:3

    • In Reevaporation during Molecular Beam Epitaxial Growth of InGaAs Layers on GaAs Substrates (2000)
    • Structure and Thermal Stability of the Chemical Bondings of Diamond-Like Carbon (DLC) Films Prepared by RF Magnetron Sputtering (2003)
    • Mechanism of the Formation of Single-Domain SiC Films on Si Using Organo-Silane Gas (2003)
  • MASHITA Masao ID: 9000000060247

    東芝研究開発センター (1996 from CiNii)

    Articles in CiNii:5

    • Thin Film Technology (1995)
    • 3. Secondary ion mass spectrometry. (1995)
    • 薄膜・表面 (1993)
  • MASHITA Masao ID: 9000000510126

    Department of Materials Science and Technology, Faculty of Science and Technology, Hirosaki University (2002 from CiNii)

    Articles in CiNii:2

    • 薄膜・表面 (1994)
    • Analytical techniques for thin films (2002)
  • MASHITA Masao ID: 9000021431546

    Tokyo Shibaura Electric Ltd. (1972 from CiNii)

    Articles in CiNii:1

    • Hillock Growth in Thin Aluminum Films (1972)
  • MASHITA Masao ID: 9000107355921

    Research and Development Center, Toshiba Corporation (1997 from CiNii)

    Articles in CiNii:1

    • Metalorganic Chemical Vapor Deposition Study Using Tertiarybutylphosphine and Tertiarybutylarsine for InAlGaP Light-Emitting Diode Fabrication (1997)
  • MASHITA Masao ID: 9000253318433

    Department of Applied Physics, Waseda University (1968 from CiNii)

    Articles in CiNii:1

    • Implantation of Impurities onto a Crystal Surface by Ion Implantation (II):Particle-Solid Interaction and Ion Implantation (1968)
  • MASHITA Masao ID: 9000253322670

    東芝総合研究所 (1982 from CiNii)

    Articles in CiNii:1

    • Terms in Thin Film Technology (1982)
  • MASHITA Masao ID: 9000253324937

    Research and Development Center, Toshiba Corp (1990 from CiNii)

    Articles in CiNii:1

    • Photo-Irradiation Effects on GaAs Atomic Layer Epitaxial Growth (1990)
  • MASHITA Masao ID: 9000253327934

    Department of Materials Science and Technology, Faculty of Science and Technology, Hirosaki University (2002 from CiNii)

    Articles in CiNii:1

    • Analytical techniques of thin films (2002)
  • MASHITA Masao ID: 9000253648551

    Toshiba Research and Development Center (1995 from CiNii)

    Articles in CiNii:1

    • Thin Film Technology. (1995)
  • MASHITA Masao ID: 9000256745090

    Toshiba Research and Development Center (1995 from CiNii)

    Articles in CiNii:1

    • Fundamentals and Present Aspects of Ion Beam Technology. IV. Ion Beam Analysis. 3. Secondary ion mass spectrometry. (1995)
  • Mashita Masao ID: 9000025066303

    Articles in CiNii:1

    • Comparison of film properties between hydrogenated and unhydrogenated diamond-like carbon films prepared by radio-frequency magnetron sputtering (2007)
  • Mashita Masao ID: 9000050191128

    Articles in CiNii:1

    • Thin-Film Deposition of Silicon-Incorporated Diamond-Like Carbon by Plasma-Enhanced Chemical Vapor Deposition Using Monomethylsilane as a Silicon Source (2008)
  • Mashita Masao ID: 9000075725296

    Articles in CiNii:1

    • Effects of Silicon Source Gas and Substrate Bias on the Film Properties of Si-Incorporated Diamond-Like Carbon by Radio-Frequency Plasma-Enhanced Chemical Vapor Deposition (2009)
  • Mashita Masao ID: 9000079895106

    Articles in CiNii:1

    • Effects of Substrate Bias Voltage on Structural, Mechanical and Tribological Properties of Diamond-Like Carbon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition Using Methane and Argon Gases (2008)
  • Mashita Masao ID: 9000252760117

    Optoelectronics Joint Research Laboratory (1987 from CiNii)

    Articles in CiNii:1

    • Doping Enhancement by Excimer Laser Irradiation in Gas Source Molecular Beam Epitaxy of GaAs (1987)
  • Mashita Masao ID: 9000252761624

    TOSHIBA Research & Development Center (1989 from CiNii)

    Articles in CiNii:1

    • KrF Excimer Laser Irradiation Effect on GaAs Atomic Layer Epitaxy (1989)
  • Mashita Masao ID: 9000252762074

    TOSHIBA Research & Developement Center (1989 from CiNii)

    Articles in CiNii:1

    • GaAs Atomic Layer Epitaxy Using the KrF Excimer Laser (1989)
  • Mashita Masao ID: 9000252955060

    Toshiba Research and Development Center (1984 from CiNii)

    Articles in CiNii:1

    • Donor Levels in Si-Doped AlGaAs Grown by MBE (1984)
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