Search Results1-20 of  32

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  • MATSUMOTO Heihachi ID: 9000005731052

    LSI Research and Development Laboratory (1983 from CiNii)

    Articles in CiNii:1

    • Hot-Electron Trapping Effects of Short Channel 64 K Dynamic MOS RAM : A-2: LSI-1 (1983)
  • Matsumoto Heihachi ID: 9000252756989

    Mitsubishi Electric Co., Kitaitami Works (1981 from CiNii)

    Articles in CiNii:1

    • Time Dependent Dielectric Breakdown of Thin SiO<SUB>2</SUB> Films (1981)
  • Matsumoto Heihachi ID: 9000252758588

    Articles in CiNii:1

    • Moisture Induced Failures in Plastic Encapsulated 64 kbit Dynamic RAM's (1984)
  • Matsumoto Heihachi ID: 9000252937867

    Department of Electronic Engineering, Faculty of Engineering, Kyoto University (1971 from CiNii)

    Articles in CiNii:1

    • Acoustoelectric Effect in Se-Te Alloy Crystals at Room Temperature (1971)
  • Matsumoto Heihachi ID: 9000252938806

    Department of Electronics, Faculty of Engineering, Kyoto University (1972 from CiNii)

    Articles in CiNii:1

    • Acoustoelectric Phenomena by the Two Carriers in Se-Te Alloy Crystals (1972)
  • Matsumoto Heihachi ID: 9000252939866

    Department of Electronics, Faculty of Engineering, Kyoto University (1973 from CiNii)

    Articles in CiNii:1

    • The Relation between Acoustoelectric Non-Ohmic Conduction and Carrier Concentration in Tellurium at 77 K (1973)
  • Matsumoto Heihachi ID: 9000252946940

    Mitsubishi Electric Corporation, KitaItami Works (1980 from CiNii)

    Articles in CiNii:1

    • The Effect of Gate Bias on Hot Electron Trapping (1980)
  • Matsumoto Heihachi ID: 9000252950200

    Articles in CiNii:1

    • A New Breakdown Phenomenon in Fine Structured VLSI Circuits (1981)
  • Matsumoto Heihachi ID: 9000252953684

    Mitsubishi Electric Corporation, Kitaitami Works (1983 from CiNii)

    Articles in CiNii:1

    • The Effect of Temperature on Hot Electron Trapping in MOSFET's (1983)
  • Matsumoto Heihachi ID: 9000252955624

    Mitsubishi Electric Corporation, Kitaitami Works (1984 from CiNii)

    Articles in CiNii:1

    • Comparison of Impact Ionization Current between PMOS and NMOS (1984)
  • Matsumoto Heihachi ID: 9000252956999

    LSI R & D Laboratory, Mitsubishi Electric Corporation (1985 from CiNii)

    Articles in CiNii:1

    • Hot Electron Improvement in MOS RAM's Based on Epitaxial Substrate (1985)
  • Matsumoto Heihachi ID: 9000392678221

    Articles in CiNii:1

    • The Relation between Acoustoelectric Non-Ohmic Conduction and Carrier Concentration in Tellurium at 77 K (1973)
  • Matsumoto Heihachi ID: 9000392679940

    Articles in CiNii:1

    • Acoustoelectric Phenomena by the Two Carriers in Se-Te Alloy Crystals (1972)
  • Matsumoto Heihachi ID: 9000392681235

    Articles in CiNii:1

    • Acoustoelectric Effect in Se-Te Alloy Crystals at Room Temperature (1971)
  • Matsumoto Heihachi ID: 9000392684789

    Articles in CiNii:1

    • The Effect of Temperature on Hot Electron Trapping in MOSFET’s (1983)
  • Matsumoto Heihachi ID: 9000392686281

    Articles in CiNii:1

    • Time Dependent Dielectric Breakdown of Thin SiO<SUB>2</SUB> Films (1981)
  • Matsumoto Heihachi ID: 9000392688702

    Articles in CiNii:1

    • The Effect of Gate Bias on Hot Electron Trapping (1980)
  • Matsumoto Heihachi ID: 9000392703487

    Articles in CiNii:1

    • Comparison of Impact Ionization Current between PMOS and NMOS (1984)
  • Matsumoto Heihachi ID: 9000392711637

    Articles in CiNii:1

    • Hot Electron Improvement in MOS RAM’s Based on Epitaxial Substrate (1985)
  • Matsumoto Heihachi ID: 9000401575078

    Articles in CiNii:1

    • Acoustoelectric Effect in Se-Te Alloy Crystals at Room Temperature (1971)
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