Search Results1-11 of  11

  • Matsutani Ryosuke ID: 9000018935204

    Articles in CiNii:1

    • Surface Recombination of Crystalline Silicon Substrates Passivated by Atomic-Layer-Deposited AIOx (Special Issue : Solid State Devices and Materials (2)) (2012)
  • Matsutani Ryosuke ID: 9000402591695

    Articles in CiNii:1

    • Refinement and Coarsening of Grains Caused by Tensile-Shear Tests in Ultra-Fine Grained Cu Processed by Severe Plastic Deformation (2019)
  • Matsutani Ryosuke ID: 9000402927191

    Articles in CiNii:1

    • Representation of Nye's Lattice Curvature Tensor by Log Angles (2019)
  • Matsutani Ryosuke ID: 9000397863492

    Department of Materials Science and Engineering, School of Materials and Chemical Technology, Tokyo Institute of Technology (2018 from CiNii)

    Articles in CiNii:1

    • Representation of Nye's Lattice Curvature Tensor by Log Angles (2018)
  • Matsutani Ryosuke ID: 9000398405747

    Department of Materials Science and Engineering, School of Materials and Chemical Technology, Tokyo Institute of Technology (2018 from CiNii)

    Articles in CiNii:1

    • Refinement and Coarsening of Grains Caused by Tensile-Shear Tests in Ultra-Fine Grained Cu Processed by Severe Plastic Deformation (2018)
  • Matsutani Ryosuke ID: 9000398627789

    Department of Materials Science and Engineering, School of Materials and Chemical Technology, Tokyo Institute of Technology (2018 from CiNii)

    Articles in CiNii:1

    • Refinement and Coarsening of Grains Caused by Tensile-Shear Tests in Ultra-Fine Grained Cu Processed by Severe Plastic Deformation (2018)
  • Matsutani Ryosuke ID: 9000398629022

    Department of Materials Science and Engineering, School of Materials and Chemical Technology, Tokyo Institute of Technology (2018 from CiNii)

    Articles in CiNii:1

    • Representation of Nye's Lattice Curvature Tensor by Log Angles (2018)
  • Matsutani Ryosuke ID: 9000401805597

    Articles in CiNii:1

    • Surface Recombination of Crystalline Silicon Substrates Passivated by Atomic-Layer-Deposited AlO$_{x}$ (2012)
  • Matsutani Ryosuke ID: 9000402006465

    Articles in CiNii:1

    • Surface Recombination of Crystalline Silicon Substrates Passivated by Atomic-Layer-Deposited AlOx (2012)
  • Matsutani Ryosuke ID: 9000402386405

    Department of Materials Science and Engineering, School of Materials and Chemical Technology, Tokyo Institute of Technology (2019 from CiNii)

    Articles in CiNii:1

    • Refinement and Coarsening of Grains Caused by Tensile-Shear Tests in Ultra-Fine Grained Cu Processed by Severe Plastic Deformation (2019)
  • Matsutani Ryosuke ID: 9000402616862

    Department of Materials Science and Engineering, School of Materials and Chemical Technology, Tokyo Institute of Technology (2019 from CiNii)

    Articles in CiNii:1

    • Representation of Nye's Lattice Curvature Tensor by Log Angles (2019)
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