Search Results1-15 of  15

  • MCHEDLIDZE Teimouraz R. ID: 9000000225669

    Komatsu Electronic Metals Co. (1996 from CiNii)

    Articles in CiNii:1

    • Hall Effect in Anisotropic Si_xGe_<1-x> Polycrystals (1996)
  • MCHEDLIDZE Teimuraz ID: 9000005599360

    Institute for Materials Research, Tohoku University (2003 from CiNii)

    Articles in CiNii:4

    • High-Resolution Photoinduced Transient Spectroscopy of Electrically Active Iron-Related Defects in Electron Irradiated High-Resistivity Silicon (2003)
    • Electrical Activity of Defects Induced by Oxygen Precipitation in Czochralski-Grown Silicon Wafers (1999)
    • ESR Spectra from Platinum-Hydrogen Pair in Silicon (2002)
  • MCHEDLIDZE Teimuraz ID: 9000046010667

    Institute for Materials Research, Tohoku University (2002 from CiNii)

    Articles in CiNii:1

    • Properties of Platinum-Hydrogen Complexes in Silicon : an ESR Study (2002)
  • Mchedlidze Teimouraz R. ID: 9000258131156

    Komatsu Electronic Metals Co., 2612, Sinomiya, Hiratsuka 254, Japan (1996 from CiNii)

    Articles in CiNii:1

    • Hall Effect in Anisotropic SixGe1-x Polycrystals. (1996)
  • Mchedlidze Teimouraz R. ID: 9000401659841

    Articles in CiNii:1

    • Hall Effect in AnisotropicSixGe1-xPolycrystals (1996)
  • Mchedlidze G. ID: 9000318592816

    Articles in CiNii:1

    • Evidence for single top-quark production in the s-channel in proton-proton collisions at s=8 TeV with the ATLAS detector using the Matrix Element Method (2016)
  • Mchedlidze G. ID: 9000321631816

    Articles in CiNii:1

    • Measurement of the dependence of transverse energy production at large pseudorapidity on the hard-scattering kinematics of proton-proton collisions at √s=2.76 TeV with ATLAS (2016)
  • Mchedlidze G. ID: 9000321634696

    Articles in CiNii:1

    • Measurement of the charge asymmetry in highly boosted top-quark pair production in √s=8 TeV pp collision data collected by the ATLAS experiment (2016)
  • Mchedlidze Teimouraz ID: 9000258147589

    Research and Development Department, Komatsu Electronic Metals Co., Ltd., 2612 Shinomiya, Hiratsuka, Kanagawa 254–0014, Japan (1999 from CiNii)

    Articles in CiNii:1

    • Electrical Activity of Defects Induced by Oxygen Precipitation in Czochralski-Grown Silicon Wafers. (1999)
  • Mchedlidze Teimouraz ID: 9000401681050

    Articles in CiNii:1

    • Electrical Activity of Defects Induced by Oxygen Precipitation in Czochralski-Grown Silicon Wafers (1999)
  • Mchedlidze Teimuraz ID: 9000258159691

    Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Sendai 980-8577, Japan (2002 from CiNii)

    Articles in CiNii:1

    • Properties of an Iron-Vacancy Pair in Silicon. (2002)
  • Mchedlidze Teimuraz ID: 9000401711143

    Articles in CiNii:1

    • 2002-12-15 (2002)
  • Mchedlidze Teimuraz ID: 9000401713226

    Articles in CiNii:1

    • ESR Spectra from Platinum-Hydrogen Pair in Silicon (2002)
  • Mchedlidze Teimuraz ID: 9000401713791

    Articles in CiNii:1

    • Properties of Platinum-Hydrogen Complexes in Silicon: an ESR Study (2002)
  • Mchedlidze Teimuraz ID: 9000401718796

    Articles in CiNii:1

    • High-Resolution Photoinduced Transient Spectroscopy of Electrically Active Iron-Related Defects in Electron Irradiated High-Resistivity Silicon (2003)
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