Search Results1-11 of  11

  • Mitsuhara Manabu ID: 9000025044840

    Articles in CiNii:1

    • InP/InGaAs heterojunction phototransistor operating at wavelengths above 2μm realized using strained InAs/InGaAs multiquantum well absorption layer (2008)
  • Mitsuhara Manabu ID: 9000241877762

    Articles in CiNii:1

    • Ultrahigh-Q Micromechanical Resonators by Using Epitaxially Induced Tensile Strain in GaNAs (2013)
  • MITSUHARA Manabu ID: 9000004778503

    NTT Device Technology Laboratories, NTT corporation (2014 from CiNii)

    Articles in CiNii:20

    • InAs quantum-well lasers emitting in the 2-μm-wavelength range for gas-sensing applications (2008)
    • 光ガスセンサに向けた波長2.3μmの分布帰還型半導体レーザ (特集 センシング用レーザ光源技術) (2009)
    • Critical thickness analysis of strain compensated InAsP-MQW grown by MOMBE (1995)
  • MITSUHARA Manabu ID: 9000107364041

    NTT Photonics Laboratories, NTT Corporation (2008 from CiNii)

    Articles in CiNii:1

    • Heterojunction Phototransistor with High Responsivity at 2.3μm wavelength (2008)
  • MITSUHARA Manabu ID: 9000107364340

    NTT Photonics Laboratories, NTT Corporation (2008 from CiNii)

    Articles in CiNii:1

    • Heterojunction Phototransistor with High Responsivity at 2.3μm wavelength (2008)
  • MITSUHARA Manabu ID: 9000284629967

    NTT Device Technology Laboratories, NTT corporation (2014 from CiNii)

    Articles in CiNii:5

    • Investigation on the optimum MQW structure for InGaN/GaN solar cells (2013)
    • Investigation on the optimum MQW structure for InGaN/GaN solar cells (2013)
    • Investigation on the optimum MQW structure for InGaN/GaN solar cells (2013)
  • Mitsuhara Manabu ID: 9000401775052

    Articles in CiNii:1

    • 2008-10-17 (2008)
  • Mitsuhara Manabu ID: 9000401803874

    Articles in CiNii:1

    • Responsivity Characteristics of InP/InGaAs Heterojunction Phototransistor with a Strained InAs/InGaAs Multiquantum Well Absorption Layer in the Base or Collector (2012)
  • Mitsuhara Manabu ID: 9000401986712

    Articles in CiNii:1

    • Ultrahigh-QMicromechanical Resonators by Using Epitaxially Induced Tensile Strain in GaNAs (2013)
  • Mitsuhara Manabu ID: 9000402004736

    Articles in CiNii:1

    • Responsivity Characteristics of InP/InGaAs Heterojunction Phototransistor with a Strained InAs/InGaAs Multiquantum Well Absorption Layer in the Base or Collector (2012)
  • Mitsuhara Manabu ID: 9000402026508

    Articles in CiNii:1

    • Influence of InGaN/GaN multiple quantum well structure on photovoltaic characteristics of solar cell (2014)
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