Search Results1-20 of  125

  • Miyake Hideto ID: 9000024946421

    Articles in CiNii:1

    • Growth and Characterization of AlGaN Multiple Quantum Wells for Electron-Beam Target for Deep-Ultraviolet Light Sources (Special Issue : Advanced Plasma Science and its Applications for Nitrides and Nanomaterials) (2013)
  • Miyake Hideto ID: 9000241670526

    Articles in CiNii:1

    • Selective Area Growth of Semipolar (2021) and (2021) GaN Substrates by Metalorganic Vapor Phase Epitaxy (Special Issue : Recent Advances in Nitride Semiconductors) (2013)
  • Miyake Hideto ID: 9000241670636

    Articles in CiNii:1

    • AlN Grown on a- and n-Plane Sapphire Substrates by Low-Pressure Hydride Vapor Phase Epitaxy (Special Issue : Recent Advances in Nitride Semiconductors) (2013)
  • Miyake Hideto ID: 9000241671175

    Articles in CiNii:1

    • Realization of Maskless Epitaxial Lateral Overgrowth of GaN on 3C-SiC/Si Substrates (Special Issue : Recent Advances in Nitride Semiconductors) (2013)
  • MIYABE Hideto ID: 9000005139071

    Kobe Pharmaceutical University (2003 from CiNii)

    Articles in CiNii:1

    • Diastereoselective Solid-Phase Radical Addition to Oxime Ether Anchored to Polymer Support (2003)
  • MIYAKE Hideto ID: 9000000318840

    Faculty of Engineering, Mie Univesity (2001 from CiNii)

    Articles in CiNii:1

    • Electron Paramagnetic Resonance and Photoluminescence Study of Defects in CuGaSe_2 Single Crystals Grown by the Traveling Heater Method (2001)
  • MIYAKE Hideto ID: 9000001977521

    Graduate School of Engineering, Mie University (2008 from CiNii)

    Articles in CiNii:3

    • Toward the development of the blue-light-emitting diode using GaN p-n junction (2007)
    • Report on "The 10^<th> Workshop for Refreshing Science in the Classroom" in Tokai-Chapter, Mie-Section (2008)
    • Report on "The 11^<th> Workshop for Refreshing Science in the Classroom" in Tokai-Chapter, Mie-Section (2008)
  • MIYAKE Hideto ID: 9000005580156

    Faculty of Engineering, Mie University (2002 from CiNii)

    Articles in CiNii:3

    • Phase Relations in the CuGa_xIn_<1-x>Se_2-In Pseudobinary System (1997)
    • Microstructure of Cu(In, Ga)Se_2 Films Deposited in Low Se Vapor Pressure (1999)
    • Photoreflectance of CuAl_xIn_<1-x>__xSe_2 Alloys (2002)
  • MIYAKE Hideto ID: 9000005620326

    Department of Electrical and Electronic Engineering, Mie University (1993 from CiNii)

    Articles in CiNii:1

    • Single Crystal Growth of Cu-III-VI_2 Semiconductors by THM (1993)
  • MIYAKE Hideto ID: 9000006691001

    Department of Electrical and Electronic Engineering, Mie University (2008 from CiNii)

    Articles in CiNii:1

    • Selective Area Growth of III-Nitride and Their Application for Emitting Devices (2008)
  • MIYAKE Hideto ID: 9000017504664

    Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University (2010 from CiNii)

    Articles in CiNii:2

    • Variation of Surface Potentials of Si-Doped Al_xGa_<1-x>N (O<x<0.87) Grown on AlN/Sapphire Template by Metal-Organic Vapor Phase Epitaxy (2010)
    • Characterization of deep electron levels of AlGaN grown by MOVPE (2010)
  • MIYAKE Hideto ID: 9000018185468

    Department of Electrical and Electronic Engineering, Mie University (2012 from CiNii)

    Articles in CiNii:2

    • Effects of Substrate Plane on the Growth of High Quality AlN by Hydride Vapor Phase Epitaxy (2009)
    • Microstructure of AlN Grown on a Nucleation Layer on a Sapphire Substrate (2012)
  • MIYAKE Hideto ID: 9000019236681

    Department of Electrical and Electronic Engineering, Mie University (2012 from CiNii)

    Articles in CiNii:2

    • Photoluminescence due to Inelastic Biexciton Scattering from an Al_<0.61>Ga_<0.39>N Ternary Alloy Epitaxial Layer at Room Temperature (2012)
    • Photoluminescence due to Inelastic Biexciton Scattering from an Al₀.₆₁Ga₀.₃₉N Ternary Alloy Epitaxial Layer at Room Temperature (2012)
  • MIYAKE Hideto ID: 9000107308403

    Department of Electrical and Electronic Engineering, Mie University (2005 from CiNii)

    Articles in CiNii:1

    • Growth of Thick AlN Layer by Hydride Vapor Phase Epitaxy (2005)
  • MIYAKE Hideto ID: 9000107350624

    Department of Electrical and Electronic Engineering, Graduate School of Engineering, Mie University (2011 from CiNii)

    Articles in CiNii:1

    • Raman Scattering Spectroscopy of Residual Stresses in Epitaxial AlN Films (2011)
  • MIYAKE Hideto ID: 9000107359901

    Department、Mie University (2011 from CiNii)

    Articles in CiNii:1

    • Etch-pit method of threading dislocations in epitaxial AlN films (2011)
  • MIYAKE Hideto ID: 9000107359938

    Department、Mie University (2011 from CiNii)

    Articles in CiNii:1

    • Etch-pit method of threading dislocations in epitaxial AlN films (2011)
  • MIYAKE Hideto ID: 9000107375351

    Articles in CiNii:1

    • Characterization of deep electron levels of AlGaN grown by MOVPE (2010)
  • MIYAKE Hideto ID: 9000107377013

    Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University (2003 from CiNii)

    Articles in CiNii:1

    • Metalorganic Vapor Phase Epitaxy Growth and Study of Stress in AlGaN Using Epitaxial AlN Underlying Layer (2003)
  • MIYAKE Hideto ID: 9000107378991

    Department of Electrical and Electronic Engineering, Mie University (2011 from CiNii)

    Articles in CiNii:1

    • Fabrication of Deep-Ultraviolet-Light-Source Tube Using Si-Doped AlGaN (2011)
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