Search Results1-18 of  18

  • Miyamura Yoshiji ID: 9000241565161

    Articles in CiNii:1

    • Effect of Crystallinity on Residual Strain Distribution in Cast-Grown Si (2013)
  • MIYAMURA Yoshiji ID: 9000107332459

    Komatsu Electronic Metals Co., Ltd. (1996 from CiNii)

    Articles in CiNii:1

    • Effect of Fe Impurities on the Generation of Process-Induced Microdefects in Czochralski Silicon Crystals (1996)
  • MIYAMURA Yoshiji ID: 9000107347421

    Articles in CiNii:1

    • Oxygen Concentration in the Top Silicon Layer of Silicon-on-Insulator Materials Formed by Low-Dose Implanation of Oxygen (1996)
  • Miyamura Yoshiji ID: 9000025126941

    Articles in CiNii:1

    • Analytical model for epitaxial growth of SiGe from SiH4 and GeH4 in reduced-pressure chemical vapor deposition (2008)
  • Miyamura Yoshiji ID: 9000258130977

    Komatsu Electronic Metals Co., Ltd., 2612 Shinomiya, Hiratsuka, Kanagawa 254, Japan (1996 from CiNii)

    Articles in CiNii:1

    • Effect of Fe Impurities on the Generation of Process-Induced Microdefects in Czochralski Silicon Crystals. (1996)
  • Miyamura Yoshiji ID: 9000258132434

    Komatsu Electronic Metals Co., Ltd., 2612 Shinomiya, Hiratsuka, Kanagawa 254, Japan (1996 from CiNii)

    Articles in CiNii:1

    • Oxygen Concentration in the Top Silicon Layer of Silicon-on-Insulator Materials Formed by Low-Dose Implantation of Oxygen. (1996)
  • Miyamura Yoshiji ID: 9000327929401

    Articles in CiNii:1

    • Numerical analysis of dislocation density and residual strain in multicrystalline silicon for solar cells using experimental verification (2016)
  • Miyamura Yoshiji ID: 9000390429964

    Articles in CiNii:1

    • 3D Numerical analysis of free surface shape in the floating zone (FZ) silicon growth with induction coil (2018)
  • Miyamura Yoshiji ID: 9000398405968

    Articles in CiNii:1

    • Numerical Simulation on Asymmetrical Interface of Floating Zone (FZ) for Silicon Crystal Growth (2018)
  • Miyamura Yoshiji ID: 9000401658740

    Articles in CiNii:1

    • Effect of Fe Impurities on the Generation of Process-Induced Microdefects in Czochralski Silicon Crystals (1996)
  • Miyamura Yoshiji ID: 9000401661465

    Articles in CiNii:1

    • Oxygen Concentration in the Top Silicon Layer of Silicon-on-Insulator Materials Formed by Low-Dose Implantation of Oxygen (1996)
  • Miyamura Yoshiji ID: 9000401804191

    Articles in CiNii:1

    • Impact of Light-Element Impurities on Crystalline Defect Generation in Silicon Wafer (2012)
  • Miyamura Yoshiji ID: 9000401990144

    Articles in CiNii:1

    • Grain boundary interactions in multicrystalline silicon grown from small randomly oriented seeds (2015)
  • Miyamura Yoshiji ID: 9000401990776

    Articles in CiNii:1

    • Advantage in solar cell efficiency of high-quality seed cast mono Si ingot (2015)
  • Miyamura Yoshiji ID: 9000402005053

    Articles in CiNii:1

    • Impact of Light-Element Impurities on Crystalline Defect Generation in Silicon Wafer (2012)
  • Miyamura Yoshiji ID: 9000402015089

    Articles in CiNii:1

    • Effect of Crystallinity on Residual Strain Distribution in Cast-Grown Si (2013)
  • Miyamura Yoshiji ID: 9000402040410

    Articles in CiNii:1

    • Silicon bulk growth for solar cells: Science and technology (2017)
  • Miyamura Yoshiji ID: 9000402050712

    Articles in CiNii:1

    • Determination of C concentration in P-doped n-type Czochralski-grown Si crystals by liquid N temperature photoluminescence after electron irradiation (2018)
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