Search Results1-20 of  112

  • MIZUTA Masashi ID: 9000001718505

    ULSI Device Development Laboratories, NEC Corporation (1998 from CiNii)

    Articles in CiNii:1

    • Analysis of Electric Field Distribution in Novel GaAs MESFET with a Field-Modulating Plate (1998)
  • MIZUTA Masashi ID: 9000002164875

    Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation (1999 from CiNii)

    Articles in CiNii:1

    • Optical Recombination Processes in High Quality GaN Films and InGaN Quantum Wells Grown on FIELO-GaN Substrates (1999)
  • MIZUTA Masashi ID: 9000003532021

    Fundamental Research Laboratories, NEC Corporation (1992 from CiNii)

    Articles in CiNii:1

    • 27p-C-3 The DX Center in AlGaAs (1992)
  • MIZUTA Masashi ID: 9000004766036

    Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation (1999 from CiNii)

    Articles in CiNii:8

    • Foreword to Special Issue on Control of Near-Interface Structure during Hetero-Epitaxial Gowth (1998)
    • 35V Operation High Power AlGaAs/GaAs HFET with a Field-Modulating Plate (1999)
    • Correlation between Stoichiometry and Gate Breakdown in GaAs MESFET's (1996)
  • MIZUTA Masashi ID: 9000004820964

    The authors are with Optoelectronics and High Frequency Device Res. Labs., NEC Corporation (2000 from CiNii)

    Articles in CiNii:2

    • InGaN MQW Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact (2000)
    • Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Gontact (1999)
  • MIZUTA Masashi ID: 9000004964171

    Articles in CiNii:2

    • 技術開発 青紫色GaN系レーザダイオード (ストレージソリューション技術特集) (2001)
    • Novel Ridge-type InGaN MQW Laser Diodes Fabricated by Selective Area re-growth on GaN Substrates (2001)
  • MIZUTA Masashi ID: 9000005527859

    Department of Physics and Electronics, Faculty of Engineering, Osaka Prefecture University (2001 from CiNii)

    Articles in CiNii:13

    • A High Polarization and High Quantum Efficiency Photocathode Using a GaAs-AlGaAs Superlattice (1995)
    • Role of Minority-Carrier Diffusion in Photoreflectance Measurements of Epitaxial GaAs Wafers (1995)
    • Quantum-efficiency Dependence of the Spin Polarization of Photoemission from a GaAs-AlGaAs Superlattice (1997)
  • MIZUTA Masashi ID: 9000005681304

    Fundamental Reseach Laboratories, NEC Corporation (1987 from CiNii)

    Articles in CiNii:1

    • Fluorescence EXAFS Study of AlGaAs Doped with Se Donor Impurities (1987)
  • MIZUTA Masashi ID: 9000005904496

    Optoelectronics and High-Frequency Device Research Laboratories, NEC Corporation (2000 from CiNii)

    Articles in CiNii:1

    • Optical Recombination Processes in High-Quality GaN Films and InGaN Quantum Wells Grown on Facet-Initiated Epitaxial Lateral Overgrown GaN Substrates (2000)
  • MIZUTA Masashi ID: 9000018305404

    Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation (1999 from CiNii)

    Articles in CiNii:3

    • ODMRによる半導体中の局所点欠陥評価 (1997)
    • Optical Recombination Processes in InGaN Quantum Wells on FIELO-GaN Substrates (1999)
    • Optical Recombination Processes in InGaN Quantum Wells on FIELO-GaN Substrates (1999)
  • MIZUTA Masashi ID: 9000020504269

    Articles in CiNii:1

    • Banking and Settlement of Accounts on Foreign Trade in Tabriz in the Qajar Period (1993)
  • MIZUTA Masashi ID: 9000242088944

    大阪大学大学院工学研究科機械工学専攻 (2013 from CiNii)

    Articles in CiNii:1

    • Study on Product Design Framework for Enhancing Interaction of Model-Based Development and Prototyping (2013)
  • MIZUTA Masashi ID: 9000243842356

    Dept of Mechanical Engineering, Osaka University (2013 from CiNii)

    Articles in CiNii:3

    • J123011 An Application of a Conceptual Design Support System focusing on Dynamic Deployment of Hypothesis and Verification for Mechatronics Systems (2011)
    • 3201 Study on Product Design Framework for Enhancing Interaction of Model-based Development and Prototyping (2012)
    • 2211 Design Experiment of Reflective Interaction of Model-based Development and Prototyping (2013)
  • MIZUTA Masashi ID: 9000252844987

    Fundamental Research Labora-tories, NEC Corporation (1986 from CiNii)

    Articles in CiNii:1

    • Towards the Possibility of the Crystal Growth Technique with Atomic-Scale Controllability (1986)
  • Masashi Mizuta ID: 9000397721536

    Articles in CiNii:1

    • The Ottoman Empire Divided and Redivided Iran: West Asia in 1915 (2008)
  • Mizuta Masashi ID: 9000004379414

    Optoelectronics and high frequency device research laboratories, NEC Corporation (1999 from CiNii)

    Articles in CiNii:2

    • 結晶成長はどこまでミクロに制御できるか (極限技術と応用物理特集号) -- (材料技術の極限) (1986)
    • 22aB7 Reduction of dislocation density of HVPE-grown GaN on sapphire substrate by using facet-initiated epitaxial lateral overgrowth technique (1999)
  • Mizuta Masashi ID: 9000252941323

    Articles in CiNii:1

    • Optical Cross Sections for the Zn-O Center in GaP (1975)
  • Mizuta Masashi ID: 9000252953483

    Imaging Science and Engineering Laboratory, Tokyo Institute of Technology (1983 from CiNii)

    Articles in CiNii:1

    • A New Photoacoustic Method to Characterize Wider-Gap Epitaxial Layers on Narrower-Gap Substrates (1983)
  • Mizuta Masashi ID: 9000252953538

    Imaging Science and Engineering Laboratory, Tokyo Institute of Technology (1983 from CiNii)

    Articles in CiNii:1

    • Organometallic Vapor Phase Epitaxial Growth of In<SUB>1−<I>x</I></SUB>Ga<I><SUB>x</SUB></I>As<I><SUB>y</SUB></I>P<SUB>1−<I>y</I></SUB> on GaAs (1983)
  • Mizuta Masashi ID: 9000252953564

    Imaging Science and Engineering Laboratory, Tokyo Institute of Technology (1983 from CiNii)

    Articles in CiNii:1

    • Light-Induced Degradation of Semiconductor Surfaces as Studied by Photoacoustic Spectroscopy: Photodarkening Process of Zn<I><SUB>x</SUB></I>Cd<SUB>1−<I>x</I></SUB>S: Ag, Al Phosphors (1983)
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