Search Results1-20 of  40

  • 1 / 2
  • Mokuno Yoshiaki ID: 9000025122698

    Articles in CiNii:1

    • Model of reactive microwave plasma discharge for growth of single-crystal diamond (Special issue: Advanced plasma science and its applications for nitrides and nanomaterials) (2011)
  • MOKUNO Yoshiaki ID: 9000001053444

    Osaka National Research Institute (2001 from CiNii)

    Articles in CiNii:1

    • Diffractive Phase Element for Shrinking Focal Spot Diameter : Design, Fabrication, and Application to Laser Beam Lithography (2001)
  • MOKUNO Yoshiaki ID: 9000005669351

    Laboratory of Purified Materials, National Institute of Advanced Industrial Science and Technology (2002 from CiNii)

    Articles in CiNii:2

    • Epitaxial Growth of Pure ^<28>Si Thin Films Using Isotopically Purified Ion Beams (2001)
    • Ion-Beam 3C-SiC Heteroepitaxy on Si (2002)
  • MOKUNO Yoshiaki ID: 9000006419045

    National Inst. of Advanced Industrial Science and Technology (AIST) Diamond Research Laboratory (DRL) (2012 from CiNii)

    Articles in CiNii:11

    • Coaxial Evaporation Source Using Vacuum Arc Dischage (1997)
    • Microanalysis by high-energy ion microprobe. (1995)
    • Surface Segregation of Pb in High Purity Aluminum (2000)
  • MOKUNO Yoshiaki ID: 9000018506959

    Diamond Research Center, National Institute of Advanced Industrial Science and Technology (AIST) (2010 from CiNii)

    Articles in CiNii:1

    • Fabrication of 1 Inch Mosaic Crystal Diamond Wafers (2010)
  • MOKUNO Yoshiaki ID: 9000021310873

    Government Industrial Research Institute, Osaka (1992 from CiNii)

    Articles in CiNii:1

    • Erosion of Titanium Nitride Coatings. (1992)
  • MOKUNO Yoshiaki ID: 9000107390120

    Diamond Research Center, National Institute of Advanced Industrial Science and Technology (AIST) (2006 from CiNii)

    Articles in CiNii:1

    • Qualitative Correspondences of Experimentally Obtained Growth Rates and Morphology of Single-Crystal Diamond with Numerical Predictions of Plasma and Gas Dynamics in Microwave Discharges for Various Substrate Holder Shapes (2006)
  • MOKUNO Yoshiaki ID: 9000252845609

    Osaka National Research Institute, AIST (1995 from CiNii)

    Articles in CiNii:1

    • Microanalysis by high-energy ion microprobe (1995)
  • MOKUNO Yoshiaki ID: 9000258206539

    Articles in CiNii:1

    • Development of single-crystalline diamond wafers:- Enlargement of crystal size by microwave plasma CVD and wafer fabrication technology - (2010)
  • MOKUNO Yoshiaki ID: 9000258233907

    Diamond Research Laboratory, AIST (2010 from CiNii)

    Articles in CiNii:1

    • Development of single-crystalline diamond wafers:- Enlargement of crystal size by microwave plasma CVD and wafer fabrication technology - (2010)
  • MOKUNO Yoshiaki ID: 9000345275764

    National Institute of Advanced Industrial Science and Technology (AIST) (2015 from CiNii)

    Articles in CiNii:1

    • Indium Implantation onto Zeolite for Development of Novel Catalysts with a Ion Beam System (2015)
  • MOKUNO Yoshiaki ID: 9000391847752

    National Institute of Advanced Industrial Science and Technology, JAPAN (2003 from CiNii)

    Articles in CiNii:1

    • Nano Crystalline and Smooth Surface Epilayer Formations of 3C-SiC at Low Temperatures Using Energetic Ions (2003)
  • MOKUNO Yoshiaki ID: 9000391847821

    National Institute of Advanced Industrial Science and Technology, JAPAN (2003 from CiNii)

    Articles in CiNii:1

    • Hardness of DLC Deposited by Plasma Based Ion Implantation and Deposition Method Using Mixed RF and Negative High Voltage Pulses (2003)
  • MOKUNO Yoshiaki ID: 9000392097733

    Advanced Industrial Science and technology (2010 from CiNii)

    Articles in CiNii:1

    • Influence of the synthesis condition and substrates to a electronic charge transport property of CVD single crystal diamond homoepitaxially grown layer (2010)
  • MOKUNO Yoshiaki ID: 9000392097755

    National Institute of Advanced Industrial Science and Technology (2010 from CiNii)

    Articles in CiNii:1

    • Evaluation of charge carrier trapping levels in CVD diamonds by use of an active carrier trapping and photo I-V mesurement (2010)
  • MOKUNO Yoshiaki ID: 9000392111332

    National Institute of Advanced Industrial Science and Technology (2008 from CiNii)

    Articles in CiNii:1

    • An investigation of synthesis conditions for CVD single crystal diamond aiming at radiation detectors (2008)
  • Mokuno Yoshiaki ID: 9000252767754

    Government Industrial Research Institute, Osaka (1993 from CiNii)

    Articles in CiNii:1

    • Formation of Crystalline SiC Buried Layer by High-Dose Implantation of MeV Carbon Ions at High Temperature (1993)
  • Mokuno Yoshiaki ID: 9000258154928

    Laboratory of Purified Materials, National Institute of Advanced Industrial Science and Technology, 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan (2001 from CiNii)

    Articles in CiNii:1

    • Epitaxial Growth of Pure 28Si Thin Films Using Isotopically Purified Ion Beams. (2001)
  • Mokuno Yoshiaki ID: 9000283788063

    Diamond Research Center, National Institute of Advanced Industrial Science and Technology, Japan. (2004 from CiNii)

    Articles in CiNii:1

    • High rate homoepitaxial growth of diamond by microwave plasma CVD (2004)
  • Mokuno Yoshiaki ID: 9000283826296

    産総研 (2013 from CiNii)

    Articles in CiNii:1

    • ダイヤモンドパワーデバイス・ウェハの研究状況とCMP への期待(キーノートスピーチ) (2013)
  • 1 / 2
Page Top