Search Results1-20 of  69

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  • Mori Nobuya ID: 9000018934962

    Articles in CiNii:1

    • Strain Effects on Avalanche Multiplication in a Silicon Nanodot Array (Special Issue : Solid State Devices and Materials (2)) (2012)
  • Mori Nobuya ID: 9000024980580

    Articles in CiNii:1

    • Ellipsoidal band structure effects on maximum ballistic current in silicon nanowires (Special issue: Solid state devices and materials) (2011)
  • Mori Nobuya ID: 9000025016415

    Articles in CiNii:1

    • Impact of interface roughness on threshold-voltage variation in ultrasmall gate-all-around and double-gate field-effect transistors (Special issue: Solid state devices and materials) (2010)
  • Mori Nobuya ID: 9000025016498

    Articles in CiNii:1

    • Electron-modulated-acoustic-phonon interactions in a coaled silicon nanowire (Special issue: Solid state devices and materials) (2010)
  • Mori Nobuya ID: 9000025017649

    Articles in CiNii:1

    • Hole transport mechanism in silicon and germanium nanowire field effect transistors (Special issue: Solid state devices and materials) (2010)
  • Mori Nobuya ID: 9000025032407

    Articles in CiNii:1

    • Analytical description of intravalley acoustic phonon limited electron mobility in ultrathin Si plate incorporating phonon modulation due to plate interfaces (2007)
  • Mori Nobuya ID: 9000025038515

    Articles in CiNii:1

    • Impact of strain on ballistic current in Si n-i-n structures (Special issue: Solid state devices and materials) (2008)
  • Mori Nobuya ID: 9000025070062

    Articles in CiNii:1

    • Theory of Resonant Tunneling through a Donor State (Special Issue : Solid State Devices and Materials (1)) (2012)
  • MORI Nobuya ID: 9000002166413

    Department of Electronic Engineering, Osaka University (2004 from CiNii)

    Articles in CiNii:1

    • Significant Reduction of Phonon Scattering Potential in 1D Si Quantum Dot Array Interconnected with Thin Oxide Layers (2004)
  • MORI Nobuya ID: 9000002169442

    Department of Electronic Engineering, Osaka University (2005 from CiNii)

    Articles in CiNii:1

    • Effects of Electron-Phonon Interaction on Transport Characteristics of Sub-10-nm Bulk-MOSFETs (2005)
  • MORI Nobuya ID: 9000002169868

    Department of Electronic Engineering, Osaka University (2005 from CiNii)

    Articles in CiNii:1

    • Phonon Limited Electron Transport In SOI and Double-Gate MOSFETs Incorporating Realistic Acoustic Phonon Waves (2005)
  • MORI Nobuya ID: 9000002173154

    Department of Electronic Engineering, Osaka University (2006 from CiNii)

    Articles in CiNii:1

    • Effects of Strained Layers on Zener Tunneling in Silicon Nanostructures (2006)
  • MORI Nobuya ID: 9000002175044

    Graduate School of Engineering, Osaka University (2008 from CiNii)

    Articles in CiNii:2

    • Coarse-Grain 3D Quantum Simulations of Nanoscale MOSFET (2007)
    • R-matrix Theory of Quantum Transport in Nanoscale Electronic Devices (2008)
  • MORI Nobuya ID: 9000002176176

    Department of Electronic Engineering, Osaka University (2007 from CiNii)

    Articles in CiNii:1

    • Impact of strain on ballistic current in Si n-i-n structures (2007)
  • MORI Nobuya ID: 9000004954211

    Graduate School of Engineering, Osaka University:JST-CREST (2015 from CiNii)

    Articles in CiNii:22

    • Carrier Dynamics in Semiconductors under MIR FEL Excitation (2003)
    • Quantum transport simulation for next-generation metal-oxide-semiconductor devices (2009)
    • Gamov method applied to gate tunneling current in MOSFETs (2004)
  • MORI Nobuya ID: 9000005558666

    Fuji Photo Film Co., Ltd. (2000 from CiNii)

    Articles in CiNii:3

    • Effect of Quantum Confinement and Lattice Relaxation on Electronic States in GaAs/In_<0.2>Ga_<0.8>As/GaAs Quantum Dots (1997)
    • Conductance through Laterally Coupled Quantum Dots (1999)
    • F(Br^-) Center in Na-doped BaFBr (2000)
  • MORI Nobuya ID: 9000006838048

    Graduate School of Engineering, Osaka University (2008 from CiNii)

    Articles in CiNii:1

    • Quantum Modeling of Carrier Transport through Silicon Nano-devices (2008)
  • MORI Nobuya ID: 9000006838946

    Graduate School of Engineering, Osaka University (2008 from CiNii)

    Articles in CiNii:1

    • Quantum Modeling of Carrier Transport through Silicon Nano-devices (2008)
  • MORI Nobuya ID: 9000107343991

    Department of Electronic Engineering, Osaka University (2005 from CiNii)

    Articles in CiNii:1

    • Mode-Coupling Effects in Non-Equilibrium Green's Function Device Simulation (2005)
  • MORI Nobuya ID: 9000107395379

    Department of Electronic Engineering, Osaka University (2001 from CiNii)

    Articles in CiNii:1

    • Reduction of Electron Decay Time Using Disordered Tunnel Barrier (2001)
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