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  • MOUILLET Robert ID: 9000006472128

    Research and Development Department, Osaka Gas Co. Ltd.:(Present office)LPMC, Ecole Normale Superieure (2001 from CiNii)

    Articles in CiNii:1

    • Photoresponse and Defect Levels of AlGaN/GaN Heterobipolar Phototransistor Grown on Low-Temperature AIN Interlayer (2001)
  • Mouillet Robert ID: 9000258156716

    Research and Development Department, Osaka Gas Co. Ltd., 17 Chudoji-Minami-machi, Shimogyo-ku, Kyoto 600-8813, Japan (2001 from CiNii)

    Articles in CiNii:1

    • Photoresponse and Defect Levels of AlGaN/GaN Heterobipolar Phototransistor Grown on Low-Temperature AlN Interlayer. (2001)
  • Mouillet Robert ID: 9000401703674

    Articles in CiNii:1

    • Photoresponse and Defect Levels of AlGaN/GaN Heterobipolar Phototransistor Grown on Low-Temperature AlN Interlayer (2001)
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