Search Results1-6 of  6

  • Muneta Iriya ID: 9000367411315

    Articles in CiNii:1

    • Artificial control of the bias-voltage dependence of tunnelling-anisotropic magnetoresistance using quantization in a single-crystal ferromagnet (2017)
  • Muneta Iriya ID: 9000367418128

    Articles in CiNii:1

    • Sudden restoration of the band ordering associated with the ferromagnetic phase transition in a semiconductor (2016)
  • Muneta Iriya ID: 9000401980507

    Articles in CiNii:1

    • Quantitative relationship between sputter-deposited-MoS2 properties and underlying-SiO2 surface roughness (2017)
  • Muneta Iriya ID: 9000402041766

    Articles in CiNii:1

    • High-mobility and low-carrier-density sputtered MoS2film formed by introducing residual sulfur during low-temperature in 3%-H2annealing for three-dimensional ICs (2017)
  • Muneta Iriya ID: 9000402048387

    Articles in CiNii:1

    • Reduction of conductance mismatch in Fe/Al2O3/MoS2system by tunneling-barrier thickness control (2018)
  • Muneta Iriya ID: 9000402050209

    Articles in CiNii:1

    • Ohmic contact between titanium and sputtered MoS2 films achieved by forming-gas annealing (2018)
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