Search Results1-16 of  16

  • Muramoto Yoshifumi ID: 9000018898743

    Articles in CiNii:1

    • Inverted InAlAs/InGaAs Avalanche Photodiode with Low-High-Low Electric Field Profile (Special Issue : Solid State Devices and Materials (1)) (2012)
  • MURAMOTO Yoshifumi ID: 9000004821525

    The authors are with NTT Photonics Laboratories (2000 from CiNii)

    Articles in CiNii:1

    • 10-Gbit/s InP-Based High-Performance Monolithic Photoreceivers Consisting of p-i-n Photodiodes and HEMT's (2000)
  • MURAMOTO Yoshifumi ID: 9000017440583

    NTT Photonics Laboratories, NTT Corporation (2012 from CiNii)

    Articles in CiNii:14

    • High-gain operation of avalanche photodiode with InP/InGaAs new structures (2011)
    • Heterogeneous-integrated optoelectronic receiver on a silica-based PLC platform (2012)
    • Heterogeneous-integrated optoelectronic receiver on a silica-based PLC platform (2012)
  • MURAMOTO Yoshifumi ID: 9000304969182

    Device Innovation Center, NTT Corporation (2014 from CiNii)

    Articles in CiNii:5

    • High-speed avalanche photodiodes with vertical illumination structure for reliability and stability (2014)
    • High-speed avalanche photodiodes with vertical illumination structure for reliability and stability (2014)
    • High-speed avalanche photodiodes with vertical illumination structure for reliability and stability (2014)
  • Muramoto Yoshifumi ID: 9000021311147

    NTT Photonics Laboratories, NTT Corporation (2005 from CiNii)

    Articles in CiNii:1

    • Over-10-dBm output uni-traveling-carrier photodiode module integrating a power amplifier for wireless transmissions in the 125-GHz band (2005)
  • Muramoto Yoshifumi ID: 9000024934478

    Articles in CiNii:1

    • Matching-Circuit-Integrated InGaAsP Schottky Barrier Diode for Zero-Biased Operation in the Sub-Millimeter-Wave Range (2012)
  • Muramoto Yoshifumi ID: 9000025088660

    Articles in CiNii:1

    • Planar Circulator for Sub-Terahertz-Wave Reflection-Geometry Imaging (2011)
  • Muramoto Yoshifumi ID: 9000258151453

    NTT Photonics Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan (2000 from CiNii)

    Articles in CiNii:1

    • Edge-Illuminated Refracting-Facet Photodiode with Large Bandwidth and High Output Voltage. (2000)
  • Muramoto Yoshifumi ID: 9000301385577

    NTT Photonics Laboratories, NTT Corporation:(Present office)NTT Device Innovation Center, NTT Corporation (2015 from CiNii)

    Articles in CiNii:1

    • C-3-54 Heterogeneously integrated PLC for DC-DP-16QAM receiver (2015)
  • Muramoto Yoshifumi ID: 9000301385726

    NTT Device Innovation Center, NTT Corporation (2015 from CiNii)

    Articles in CiNii:1

    • C-4-11 50-Gbit/s high-speed and high-sensitivity operation of avalanche photodiode employing ultra-thin InAlAs avalanche layer (2015)
  • Muramoto Yoshifumi ID: 9000401688605

    Articles in CiNii:1

    • Edge-Illuminated Refracting-Facet Photodiode with Large Bandwidth and High Output Voltage (2000)
  • Muramoto Yoshifumi ID: 9000401801946

    Articles in CiNii:1

    • Planar Circulator for Sub-Terahertz-Wave Reflection-Geometry Imaging (2011)
  • Muramoto Yoshifumi ID: 9000401803865

    Articles in CiNii:1

    • 2012-02-20 (2012)
  • Muramoto Yoshifumi ID: 9000402011304

    Articles in CiNii:1

    • Matching-Circuit-Integrated InGaAsP Schottky Barrier Diode for Zero-Biased Operation in the Sub-Millimeter-Wave Range (2012)
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