Search Results1-9 of  9

  • MURANUSHI Kengo ID: 9000004891744

    The Furukawa Electirc, Co., LTD.:Optoelectronic Industry And Technology Development Association (2006 from CiNii)

    Articles in CiNii:10

    • Reduction of Spectral-Linewidth in Monolithically Integrated Wavelength Selectable Laser (2005)
    • Full C-band thermally tunable high power DFB laser module integrated with wavelength monitor (2003)
    • Design and Fabrication of Distributed Reflector Lasers for Low Threshold Current and High Efficiency Operation (2001)
  • MURANUSHI Kengo ID: 9000005908169

    Research Center for Quantum Effect Electronics, Tokyo institute of Technology (2002 from CiNii)

    Articles in CiNii:1

    • GaInAsP/InP Strain-Compensated Quantum-Wire Lasers Fabricated by CH_4/H_2 Dry Etching and Organometallic Vapor-Phase-Epitaxial Regrowth (2002)
  • MURANUSHI Kengo ID: 9000107349459

    Research Center for Quantum Effect Electronics, Tokyo Institute of Technology (2003 from CiNii)

    Articles in CiNii:1

    • Reliable Operation of GaInAsP/InP Distributed Feedback Laser with Wirelike Active Regions (2003)
  • MURANUSHI Kengo ID: 9000107377484

    Research Center for Quantum Effect Electronics, Tokyo Institute of Technology (2003 from CiNii)

    Articles in CiNii:1

    • Multiple-Quantum-Wire Structures with Good Size Uniformity Fabricated by CH_4/H_2 Dry Etching and Organometallic Vapor-Phase-Epitaxial Regrowth (2003)
  • Muranushi Kengo ID: 9000258160067

    Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan (2002 from CiNii)

    Articles in CiNii:1

    • GaInAsP/InP Strain-Compensated Quantum-Wire Lasers Fabricated by CH4/H2 Dry Etching and Organometallic Vapor-Phase-Epitaxial Regrowth. (2002)
  • Muranushi Kengo ID: 9000258167970

    Research Center for Quantum Effect Electronics, Tokyo Institute of Technology (2003 from CiNii)

    Articles in CiNii:1

    • Multiple-Quantum-Wire Structures with Good Size Uniformity Fabricated by CH4/H2 Dry Etching and Organometallic Vapor-Phase-Epitaxial Regrowth (2003)
  • Muranushi Kengo ID: 9000401712526

    Articles in CiNii:1

    • GaInAsP/InP Strain-Compensated Quantum-Wire Lasers Fabricated by CH4/H2 Dry Etching and Organometallic Vapor-Phase-Epitaxial Regrowth (2002)
  • Muranushi Kengo ID: 9000401716617

    Articles in CiNii:1

    • Multiple-Quantum-Wire Structures with Good Size Uniformity Fabricated by CH4/H2Dry Etching and Organometallic Vapor-Phase-Epitaxial Regrowth (2003)
  • Muranushi Kengo ID: 9000401718086

    Articles in CiNii:1

    • Reliable Operation of GaInAsP/InP Distributed Feedback Laser with Wirelike Active Regions (2003)
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