Search Results1-20 of  56

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  • NAGAHAMA Shin-ichi ID: 9000001104832

    Nitride Semiconductor Research Laboratory, Nichia Corporation (2003 from CiNii)

    Articles in CiNii:1

    • Influence of Internal Electric Field on the Recombination Dynamics of Localized Excitons in an InGaN Double-Quantum-Well Laser Diode Wafer Operated at 450nm (2003)
  • NAGAHAMA Shin-ichi ID: 9000001866029

    LD Development Department, LD Engineering Division, Optoelectronics Product BU, Nichia Corp. (2008 from CiNii)

    Articles in CiNii:2

    • Current Status of GaN-Based Laser Diodes Grown on Freestanding GaN Substrate (2007)
    • High Power Pure Blue InGaN Laser Diodes (2008)
  • NAGAHAMA Shin-ichi ID: 9000004339048

    Articles in CiNii:27

    • Present status and problem of GaN-Based Light Emitting Diodes and Laser Diodes (2002)
    • Wavelength coverage expansion in GaN-based laser diodes (2004)
    • Advanced Development of GaN-Based UV-LED and UV-LD (2004)
  • NAGAHAMA Shin-ichi ID: 9000005491063

    日立造船(株)船舶・防衛事業本部 (1993 from CiNii)

    Articles in CiNii:3

    • タンク壁適合座標系による3次元スロッシングの数値解析 (1992)
    • Ultimate Longitudinal Strength of Double Hull Tanker (1993)
    • On the Buckling Strength of Stiffened Structure in Ships (1981)
  • NAGAHAMA Shin-ichi ID: 9000005499054

    Hitachi Zosen (1994 from CiNii)

    Articles in CiNii:1

    • 3-3 3-Dimensional Stress Analysis of an Insulation System for TGZ Membrane Type LNG Carriers (1994)
  • NAGAHAMA Shin-ichi ID: 9000005502710

    Articles in CiNii:5

    • 汎用流体・構造連成解析コ-ドによるスロッシング解析技術の構築とその利用 (船舶・海洋特集号) (1995)
    • メンブレン方式LNG船防熱構造のスロッシング強度 (船舶小特集号) (1997)
    • 3-Dimensional Stress Analysis of an Insulation System for TGZ Membrane Type LNG Carriers (1995)
  • NAGAHAMA Shin-ichi ID: 9000005840538

    Nitride Semiconductor Research Laboratory, Nichia Corporation (2002 from CiNii)

    Articles in CiNii:1

    • Study of GaN-based Laser Diodes in Near Ultraviolet Region (2002)
  • NAGAHAMA Shin-ichi ID: 9000045622711

    Nitride Semiconductor Research Laboratory, Nichia Corporation (2001 from CiNii)

    Articles in CiNii:1

    • Ultraviolet GaN Single Quantum Well Laser Diodes (2001)
  • NAGAHAMA Shin-ichi ID: 9000045945500

    Department of Research and Development, Nichia Chemical Industries, Ltd. (1998 from CiNii)

    Articles in CiNii:1

    • Violet InGaN/GaN/AlGaN-Based Laser Diodes with an Output Power of 420 mW (1998)
  • NAGAHAMA Shin-ichi ID: 9000107317236

    LD Development Department, Nichia Corporation (2006 from CiNii)

    Articles in CiNii:1

    • CW Operation of the First-Order AlInGaN 405nm Distributed Feedback Laser Diodes (2006)
  • NAGAHAMA Shin-ichi ID: 9000107347404

    Articles in CiNii:1

    • High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes (1997)
  • NAGAHAMA Shin-ichi ID: 9000107348010

    Nitride Semiconductor Research Laboratory, Nichia Corporation (2004 from CiNii)

    Articles in CiNii:1

    • Watt-Class High-Output-Power 365nm Ultraviolet Light-Emitting Diodes (2004)
  • NAGAHAMA Shin-ichi ID: 9000107362004

    Nitride Semiconductor Research Laboratory, Nichia Chemical Industries, Ltd. (2001 from CiNii)

    Articles in CiNii:1

    • Wavelength Dependence of InGaN Laser Diode Characteristics (2001)
  • NAGAHAMA Shin-ichi ID: 9000107374432

    Articles in CiNii:1

    • High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures (1995)
  • NAGAHAMA Shin-ichi ID: 9000107391661

    Nitride Semiconductor Research Laboratory, Nichia Corporation (2003 from CiNii)

    Articles in CiNii:1

    • 365nm Ultraviolet Laser Diodes Composed of Quaternary AlInGaN Alloy (2003)
  • NAGAHAMA Shin-ichi ID: 9000241154555

    Nitride Semiconductor Research Laboratory, Nichia Corporation (2012 from CiNii)

    Articles in CiNii:1

    • Effects of internal field and potential inhomogeneity on the lasing properties of In GaN-based green laser diodes fabricated on(0001)polar substrates (2012)
  • NAGAHAMA Shin-ichi ID: 9000241154747

    Nitride Semiconductor Research Laboratory, Nichia Corporation (2012 from CiNii)

    Articles in CiNii:1

    • Effects of internal field and potential inhomogeneity on the lasing properties of In GaN-based green laser diodes fabricated on(0001)polar substrates (2012)
  • NAGAHAMA Shin-ichi ID: 9000241156256

    Nitride Semiconductor Research Laboratory, Nichia Corporation (2012 from CiNii)

    Articles in CiNii:1

    • Effects of internal field and potential inhomogeneity on the lasing properties of In GaN-based green laser diodes fabricated on(0001)polar substrates (2012)
  • NAGAHAMA Shin-ichi ID: 9000257902028

    Nitride Semiconductor Research Laboratory, Nichia Corporation (2004 from CiNii)

    Articles in CiNii:1

    • Advanced Development of GaN-Based UV-LED and UV-LD (2004)
  • Nagahama Shin'ichi ID: 9000020344872

    Second Department of Pathology, Osaka City University Medical School (1989 from CiNii)

    Articles in CiNii:1

    • GENERAL SESSION (1989)
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